Photosensitive composition for euv light, pattern forming method, and method for manufacturing electronic device

Patent metadata

Field	Value
Publication number	US-2021011377-A1
Application number	US-202017035746-A
Country	US
Kind code	A1
Filing date	Sep 29, 2020
Priority date	Apr 20, 2018
Publication date	Jan 14, 2021
Grant date	—

Abstract

A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3,
Requirement 1: The A value determined by Formula (1) is 0.14 or more,

A=([H]×0.04+[C]×1.0+[N]×2.1+[0]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[0]×16+[F]×19+[S]×32+[I]×127)  Formula (1):
Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.

First claim

What is claimed is:

1 . A photosensitive composition for EUV light, comprising:
a resin that has an increased polarity by action of an acid, thereby having an increased solubility in an alkali developer and a decreased solubility in an organic solvent; and a photoacid generator, or a resin that has a repeating unit having a photoacid generating group, and has an increased polarity by action of an acid, thereby having an increased solubility in an alkali developer and a decreased solubility in an organic solvent, and wherein the photosensitive composition satisfies Requirement 1 to Requirement 3, Requirement 1: an A value determined by Formula (1) is 0.14 or more,
A=([H]×0.04+[C]×1.0+[N]×2.1+[0]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[0]×16+[F]×19+[S]×32+[I]×127)  Formula (1):

in the formula, [H] represents a molar ratio of hydrogen atoms derived from a total solid content with respect to all atoms of the total solid content in the photosensitive composition for EUV light, [C] represents a molar ratio of carbon atoms derived from the total solid content with respect to all the atoms of the total solid content in the photosensitive composition for EUV light, [N] represents a molar ratio of nitrogen atoms derived from the total solid content with respect to all the atoms of the total solid content in the photosensitive composition for EUV light, [0] represents a molar ratio of oxygen atoms derived from the total solid content with respect to all the atoms of the total solid content in the photosensitive composition for EUV light, [F] represents a molar ratio of fluorine atoms derived from the total solid content with respect to all the atoms of the total solid content in the photosensitive composition for EUV light, [S] represents a molar ratio of sulfur atoms derived from the total solid content with respect to all the atoms of the total solid content in the photosensitive composition for EUV light, and [I] represents a molar ratio of iodine atoms derived from the total solid content with respect to all the atoms of the total solid content in the photosensitive composition for EUV light, Requirement 2: a concentration of a solid content in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: a content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.

2 . The photosensitive composition for EUV light according to claim 1 , comprising:
the resin that has an increased polarity by action of an acid, thereby having an increased solubility in an alkali developer and a decreased solubility in an organic solvent; and a photoacid generator consisting of a cationic moiety and an anionic moiety, wherein a B value determined by Formula (2) is 0 eV or more,
B value=LUMO(Polymer)−LUMO(PAG_Cation)  Formula (2):

in the formula, the LUMO (Polymer) represents an energy value of a lowest unoccupied molecular orbital level of a monomer of a repeating unit which is derived from the monomer having a lowest energy value of the lowest unoccupied molecular orbital level, the repeating unit being one of repeating units included in an amount of 5% by mass or more with respect to all the repeating units of the resin, and the LUMO (PAG_Cation) represents an energy value of the lowest unoccupied molecular orbital level of a cationic moiety of the photoacid generator which is contained in a largest amount in the photosensitive composition for EUV light in term of a mass.

3 . The photosensitive composition for EUV light according to claim 1 ,
wherein a volume of an acid generated from the photoacid generator is 240 Å3 or more.

4 . The photosensitive composition for EUV light according to claim 1 ,
wherein a glass transition temperature of the resin is higher than 90° C.

5 . The photosensitive composition for EUV light according to claim 1 ,
wherein the resin has an acid group with an acid dissociation constant of 13 or less.

6 . The photosensitive composition for EUV light according to claim 5 ,
wherein a content of the acid group is 0.80 to 6.00 mmol/g.

7 . The photosensitive composition for EUV light according to claim 1 ,
wherein the resin has a repeating unit having a fluorine atom or an iodine atom.

8 . The photosensitive composition for EUV light according to claim 7 ,
wherein neither a structure in which a polar group is protected with a leaving group that leaves by action of an acid nor an acid group is included in the repeating unit having a fluorine atom or an iodine atom.

9 . The photosensitive composition for EUV light according to claim 1 ,
wherein the resin includes a fluorine atom and an iodine atom.

10 . A pattern forming method comprising:
forming a resist film on a substrate using the photosensitive composition for EUV light according to claim 1 ; exposing the resist film with EUV light; and developing the exposed resist film using an alkali developer to form a pattern.

11 . A method for manufacturing an electronic device, comprising the pattern forming method according to claim 10 .

Assignees

• Fujifilm Corp

Inventors

• Shirakawa Michihiro
• Furutani Hajime
• Oka Hironori

Classifications

• G03F7/0045 Primary

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

• G03F7/0392

  the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title

• G03F7/0046

  with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title

• G03F7/0397

  the macromolecular compound having an alicyclic moiety in a side chain · CPC title

• G03F7/012

  Macromolecular azides; Macromolecular additives, e.g. binders {(G03F7/0085 takes precedence)} · CPC title