Analyte sensors and sensing methods featuring low-potential detection
US-2024402120-A1 · Dec 5, 2024 · US
US2021003526A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021003526-A1 |
| Application number | US-201916503235-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 3, 2019 |
| Priority date | Jul 3, 2019 |
| Publication date | Jan 7, 2021 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
Sensors and methods for manufacturing sensors are provided. An exemplary method for manufacturing a sensor includes forming an electrode lead pattern over an insulator base substrate. Further, the method includes forming a structural backing layer over the electrode lead pattern and insulator base substrate. Also, the method includes performing a cutting process to cut through the structural backing layer to form a structural backing over the electrode lead pattern.
Opening claim text (preview).
What is claimed is: 1 . A method for manufacturing a sensor, the method comprising: forming an electrode lead pattern over an insulator base substrate; forming a structural backing layer over the electrode lead pattern and insulator base substrate; and performing a cutting process to cut through the structural backing layer to form a structural backing over the electrode lead pattern. 2 . The method of claim 1 , further comprising forming an upper insulator over the insulator base substrate and adjacent the electrode lead pattern before forming the structural backing layer over the electrode lead pattern and insulator base substrate. 3 . The method of claim 1 , further comprising forming an upper insulator over the structural backing and the insulator base substrate after performing the cutting process to cut through the structural backing layer to form the structural backing over the electrode lead pattern. 4 . The method of claim 1 , further comprising forming an underlying layer of titanium or chromium over the electrode lead pattern and insulator base substrate, wherein forming the structural backing layer over the electrode lead pattern and insulator base substrate comprises forming the structural backing layer over the underlying layer of titanium or chromium. 5 . The method of claim 1 further comprising forming an upper insulator over the insulator base substrate, wherein the insulator base substrate is polyimide, wherein the electrode lead pattern is formed from gold and/or titanium, wherein the structural backing layer is polyimide, and wherein the upper insulator is polyimide. 6 . The method of claim 1 wherein performing the cutting process to cut through the structural backing layer to form the structural backing over the electrode lead pattern comprises simultaneously cutting through the structural backing layer and the insulator base substrate. 7 . The method of claim 1 wherein: forming the electrode lead pattern over the insulator base substrate comprises forming the electrode lead pattern with a first terminal lead, a second terminal lead, and intermediate leads located between the first terminal lead and the second terminal lead; the electrode lead pattern has a width extending from the first terminal lead to the second terminal lead; and performing the cutting process to cut through the structural backing layer to form the structural backing over the electrode lead pattern comprises covering the electrode lead pattern over the width continuously from the first terminal lead to the second terminal lead. 8 . The method of claim 1 wherein: forming the electrode lead pattern over the insulator base substrate comprises forming the electrode lead pattern with a first terminal lead, a second terminal lead, and intermediate leads located between the first terminal lead and the second terminal lead; the electrode lead pattern has a width extending from the first terminal lead to the second terminal lead; and performing the cutting process to cut through the structural backing layer to form the structural backing over the electrode lead pattern comprises cutting the structural backing layer into distinct segments, wherein the structural backing layer does not cover the electrode lead pattern over the width continuously from the first terminal lead to the second terminal lead. 9 . The method of claim 1 further comprising forming the insulator base substrate over a wafer before forming the electrode lead pattern over the insulator base substrate. 10 . A method for manufacturing sensors, the method comprising: forming an insulator base substrate over a wafer; forming a plurality of electrode lead patterns over the insulator base substrate; forming a structural backing layer over the plurality of electrode lead patterns and insulator base substrate; and performing a cutting process to cut through the structural backing layer to form a structural backing over each respective electrode lead pattern. 11 . The method of claim 10 , further comprising forming an upper insulator over the insulator base substrate and adjacent each respective electrode lead pattern before forming the structural backing layer over the plurality of electrode lead patterns and insulator base substrate. 12 . The method of claim 10 , further comprising forming an upper insulator over each respective structural backing and the insulator base substrate after performing the cutting process to cut through the structural backing layer to form each respective structural backing. 13 . The method of claim 10 , further comprising forming an underlying layer of titanium or chromium over the electrode lead pattern and insulator base substrate, wherein forming the structural backing layer over the plurality of electrode lead patterns and insulator base substrate comprises forming the structural backing layer over the underlying layer of titanium or chromium. 14 . The method of claim 10 further comprising forming an upper insulator over the insulator base substrate, wherein the insulator base substrate is polyimide, wherein the plurality of electrode lead patterns is formed from gold and/or titanium, wherein the structural backing layer is polyimide, and wherein the upper insulator is polyimide. 15 . The method of claim 10 wherein performing the cutting process to cut through the structural backing layer to form each respective structural backing comprises simultaneously cutting through the structural backing layer and the insulator base substrate. 16 . The method of claim 10 wherein: forming the plurality of electrode lead patterns over the insulator base substrate comprises forming each electrode lead pattern with a first terminal lead, a second terminal lead, and intermediate leads located between the first terminal lead and the second terminal lead; each electrode lead pattern has a width extending from the first terminal lead to the second terminal lead; and performing the cutting process to cut through the structural backing layer to form each respective structural backing comprises covering each electrode lead pattern over the respective width continuously from the first terminal lead to the second terminal lead. 17 . The method of claim 10 wherein: forming the plurality of electrode lead patterns over the insulator base substrate comprises forming each electrode lead pattern with a first terminal lead, a second terminal lead, and intermediate leads located between the first terminal lead and the second terminal lead; each electrode lead pattern has a width extending from the first terminal lead to the second terminal lead; and performing the cutting process to cut through the structural backing layer to form each respective structural backing comprises cutting the structural backing layer into distinct segments, wherein each structural backing layer does not cover the respective electrode lead pattern over the respective width continuously from the first terminal lead to the second terminal lead. 18 . A sensor comprising: an insulator base substrate; an electrode lead pattern over the insulator base substrate; a structural backing layer over the electrode lead pattern and insulator base substrate. 19 . The sensor of claim 18 further comprising an upper insulator over the insulator base substrate, wherein the structural backing layer is located over the upper insulator. 20 . The sensor of claim 18 further comprising an upper insulator over the insulator base substrate, the elect
Test elements therefor, i.e. disposable laminated substrates with electrodes, reagent and channels (optical biosensors G01N33/52) · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.