In situ alloying of Cu—Cr—Nb alloys using selective laser melting
US-11859272-B1 · Jan 2, 2024 · US
US2021002743A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021002743-A1 |
| Application number | US-201916976351-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 28, 2019 |
| Priority date | Mar 30, 2018 |
| Publication date | Jan 7, 2021 |
| Grant date | — |
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A copper alloy includes, by mass %: Mg: 0.15%-0.35%; and P: 0.0005%-0.01%, with a remainder being Cu and unavoidable impurities, wherein [Mg]+20×[P]<0.5 is satisfied. Among the unavoidable impurities, H is 10 mass ppm or less, O is 100 mass ppm or less, S is 50 mass ppm or less, and C is 10 mass ppm or less. In addition, 0.20<(NF J2 /(1−NF J3 )) 0.5 ≤0.45 is satisfied where a proportion of J3, in which all three grain boundaries constituting a grain boundary triple junction are special grain boundaries, to a total grain boundary triple junctions is NF J3 , and a proportion of J2, in which two grain boundaries constituting a grain boundary triple junction are special grain boundaries and one grain boundary is a random grain boundary, to the total grain boundary triple junctions is NF J2 .
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1 . A copper alloy for electronic or electric devices, comprising: Mg in a range of 0.15 mass % or greater and less than 0.35 mass %; and P in a range of 0.0005 mass % or greater and less than 0.01 mass %, with a remainder being Cu and unavoidable impurities, wherein an amount of Mg [Mg] and an amount of P [P] in terms of mass ratio satisfy a relation: [Mg]+20×[P]<0.5, an amount of H is 10 mass ppm or less, an amount of O is 100 mass ppm or less, an amount of S is 50 mass ppm or less, and an amount of C is 10 mass ppm or less, all of which are the unavoidable impurities, and a surface orthogonal to a rolling width direction is used as an observation surface, measurement regarding a matrix is performed on a measurement area of 10,000 μm 2 or larger at every measurement intervals of 0.25 μm by an EBSD method, measured results are analyzed by data analysis software OIM to obtain a CI value in each measurement point, a measurement point in which a CI value is 0.1 or less is removed, a boundary having more than 15° of an orientation difference between neighboring measuring points is assigned as a grain boundary, a coincidence boundary in which a Σ value is 29 or less is defined as a special grain boundary, and the remaining grain boundaries are defined as random grain boundaries, then, with regard to grain boundary triple junctions analyzed by the OIM, 0.20<(NF J2 /(1−NF J3 )) 0.5 ≤0.45 is satisfied in a case where a proportion of J3, in which all three grain boundaries constituting a grain boundary triple junction are special grain boundaries, to total grain boundary triple junctions is represented by NF J3 , and a proportion of J2, in which two grain boundaries constituting a grain boundary triple junction are special grain boundaries and one grain boundary is a random grain boundary, to the total grain boundary triple junctions is represented by NF J2 . 2 . The copper alloy for electronic or electric devices according to claim 1 , wherein an electrical conductivity is greater than 75% IACS. 3 . The copper alloy for electronic or electric devices according to claim 1 , wherein the amount of Mg [Mg] and the amount of P [P] in terms of mass ratio satisfy a relation: [Mg]/[P]≤400. 4 . The copper alloy for electronic or electric devices according to claim 1 , wherein a 0.2% proof stress measured by performing a tensile test in a direction parallel to a rolling direction is 200 MPa or greater. 5 . The copper alloy for electronic or electric devices according to claim 1 , wherein a residual stress rate is 75% or greater under conditions of 150° C. for 1,000 hours. 6 . A copper alloy plate or strip material for electronic or electric devices, comprising: the copper alloy for electronic or electric devices according to claim 1 , wherein a thickness of the copper alloy plate or strip material is more than 0.5 mm. 7 . The copper alloy plate or strip material for electronic or electric devices according to claim 6 , further comprising a Sn plating layer or a Ag plating layer on a surface thereof. 8 . A component for electronic or electric devices, comprising the copper alloy plate or strip material for electronic or electric devices according to claim 6 . 9 . A terminal comprising the copper alloy plate or strip material for electronic or electric devices according to claim 6 . 10 . A busbar comprising the copper alloy plate or strip material for electronic or electric devices according to claim 6 .
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