Laser dicing glass wafers using advanced laser sources
US-2024409449-A1 · Dec 12, 2024 · US
US2021001426A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021001426-A1 |
| Application number | US-202016947841-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 19, 2020 |
| Priority date | Dec 12, 2011 |
| Publication date | Jan 7, 2021 |
| Grant date | — |
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Thin-film devices, for example electrochromic devices for windows, and methods of manufacturing are described. Particular focus is given to methods of patterning optical devices. Various edge deletion and isolation scribes are performed, for example, to ensure the optical device has appropriate isolation from any edge defects. Methods described herein apply to any thin-film device having one or more material layers sandwiched between two thin film electrical conductor layers. The described methods create novel optical device configurations.
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1 - 22 . (canceled) 23 . A method of fabricating an optical device, the method comprising, in the following order: depositing a lower transparent conductor layer on a substantially transparent substrate; depositing a defect mitigation insulating (DMIL) layer on the lower transparent conductor layer; removing material down to the DMIL and a predefined depth of material from the lower transparent conductor layer in regions at predefined locations in a bus bar expose area along a side of the substantially transparent substrate; depositing an electrochromic device stack over the substantially transparent substrate; and removing the electrochromic device stack at the predefined locations to expose the lower transparent conductor layer. 24 . The method of fabricating the optical device of claim 23 , wherein removing the electrochromic device stack at the predefined locations forms spaced punch through areas penetrating into the lower transparent conductor layer; and further comprising filling the spaced punch through areas with a material to form a bus bar. 25 . The method of fabricating the optical device of claim 24 , wherein the spaced punch through areas form a plurality of separated scribe lines along the side of the substantially transparent substrate; and wherein the electrochromic device stack is at least partially intact between the separated scribe lines. 26 . The method of fabricating the optical device of claim 23 , wherein the bus bar material is a conductive ink or a solder material. 27 . The method of fabricating the optical device of claim 23 , wherein the electrochromic device stack comprises multiple material layers and an upper transparent conductor layer. 28 . The method of fabricating the optical device of claim 23 , wherein the predefined depth of material in the lower transparent conductor layer is removed using a mechanical grinder. 29 . The method of fabricating the optical device of claim 23 , wherein the predefined depth of material in the lower transparent conductor layer is removed using laser ablation from the substrate side or from the film side. 30 . The method of fabricating the optical device of claim 23 , wherein the electrochromic device stack is removed at the predefined locations using laser ablation from the substrate side or from the film side. 31 . The method of fabricating the optical device of claim 23 , wherein the electrochromic device stack is removed at the predefined locations using mechanical grinding. 32 . A method of fabricating an optical device, the method comprising, in the following order: depositing a lower transparent conductor layer on a substantially transparent substrate; depositing a defect mitigation insulating layer (DMIL) on the lower transparent conductor layer; depositing a strip of sacrificial material over the DMIL in a bus bar expose area along a side of the substantially transparent substrate; depositing an electrochromic device stack over the substantially transparent substrate; and removing the electrochromic device stack, the DMIL, and the sacrificial material to expose the lower transparent conductor layer in the bus bar expose area, wherein the sacrificial material has higher absorptive properties than the electrochromic device stack. 33 . The method of fabricating the optical device of claim 32 , wherein material is removed by laser ablation from a substrate side or from a film side. 34 . The method of fabricating the optical device of claim 32 , wherein laser ablation removes material from the lower transparent conductor layer at spaced punch through areas within the bus bar expose area. 35 . The method of fabricating the optical device of claim 33 , further comprising filling the spaced punch through areas with a material to form a bus bar. 36 . The method of fabricating the optical device of claim 32 , wherein the spaced punch through areas form a plurality of separated scribe lines along the side of the substantially transparent substrate; and wherein the electrochromic device stack is at least partially intact between the separated scribe lines. 37 . The method of fabricating the optical device of claim 35 , wherein the bus bar material is a conductive ink or a solder material. 38 . A method of fabricating an optical device, the method comprising, in the following order: depositing a lower transparent conductor layer on a substantially transparent substrate; depositing a strip of sacrificial material over lower transparent conductor layer in a bus bar expose area along a side of the substantially transparent substrate; depositing a defect mitigation insulating layer (DMIL) on the substantially transparent; depositing an electrochromic device stack over the DMIL; and removing the electrochromic device stack, the DMIL, and the sacrificial material to expose the lower transparent conductor layer in the bus bar expose area, wherein the sacrificial material has higher absorptive properties than the electrochromic device stack. 39 . The method of fabricating the optical device of claim 38 , wherein material is removed by laser ablation from a substrate side or from a film side. 40 . The method of fabricating the optical device of claim 38 , wherein laser ablation removes material from the lower transparent conductor layer at spaced punch through areas within the bus bar expose area. 41 . The method of fabricating the optical device of claim 39 , further comprising filling the spaced punch through areas with a material to form a bus bar. 42 . The method of fabricating the optical device of claim 38 , wherein the spaced punch through areas form a plurality of separated scribe lines along the side of the substantially transparent substrate; and wherein the electrochromic device stack is at least partially intact between the separated scribe lines. 43 . The method of fabricating the optical device of claim 38 , wherein the bus bar material is a conductive ink or a solder material. 44 . A method of fabricating an optical device, the method comprising, in the following order: depositing a defect mitigation insulating layer (DMIL) on the substantially transparent substrate; depositing a lower transparent conductor layer on a substantially transparent substrate; depositing a strip of sacrificial material over the DMIL in a bus bar expose area along a side of the substantially transparent substrate; depositing an electrochromic device stack over the substantially transparent substrate; and removing the electrochromic device stack, the DMIL, and the sacrificial material to expose the lower transparent conductor layer in the bus bar expose area, wherein the sacrificial material has higher absorptive properties than the electrochromic device stack. 45 - 50 . (canceled)
the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors · CPC title
Layers comprising indium tin oxide [ITO] · CPC title
Transparent conductive oxide layers [TCO] being part of a multilayer coating · CPC title
Laminated glass comprising interlayers · CPC title
with at least two coatings of inorganic materials (C03C17/36, C03C17/42 take precedence) · CPC title
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