Etching compositions

Patent metadata

Field	Value
Publication number	US-2020392405-A1
Application number	US-202016890077-A
Country	US
Kind code	A1
Filing date	Jun 2, 2020
Priority date	Jun 13, 2019
Publication date	Dec 17, 2020
Grant date	—

Abstract

The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing one or both of titanium nitride (TiN) and cobalt (Co) from a semiconductor substrate without substantially forming a cobalt oxide hydroxide layer.

First claim

What is claimed is:

1 . An etching composition, comprising:
1) at least one oxidizing agent; 2) at least one first carboxylic acid, wherein the first carboxylic acid comprises at least one unit of unsaturation; 3) at least one chelating agent; 4) at least one leveling agent; and 5) water.

2 . The composition of claim 1 , wherein the composition has a pH between about 1 and about 5.

3 . The composition of claim 1 , wherein the at least one oxidizing agent comprises hydrogen peroxide.

4 . The composition of claim 1 , wherein the at least one oxidizing agent is in the amount of from about 0.01% to about 20% by weight of the composition.

5 . The composition of claim 1 , wherein the at least one oxidizing agent is in the amount of from about 0.1% to about 10% by weight of the composition.

6 . The composition of claim 1 , wherein the at least one oxidizing agent is in the amount of from about 0.5% to about 1% by weight of the composition.

7 . The composition of claim 1 , wherein the at least one first carboxylic acid comprises a carboxylic acid having three to ten carbon atoms.

8 . The composition of claim 1 , wherein the at least one first carboxylic acid comprises crotonic acid, maleic acid, fumaric acid, propenoic acid, 3-pentenoic acid, 5-hexenoic acid, 6-heptenoic acid, 7-octenoic acid, 8-nonenoic acid, or 9-undecylenic acid.

9 . The composition of claim 1 , wherein the at least one first carboxylic acid is in the amount of from about 0.005% to about 3% by weight of the composition.

10 . The composition of claim 1 , further comprising at least one second carboxylic acid.

11 . The composition of claim 10 , wherein the at least one second carboxylic acid comprises a monocarboxylic acid.

12 . The composition of claim 11 , wherein the monocarboxylic acid is a C 1 to C 10 monocarboxylic acid.

13 . The composition of claim 12 , wherein the monocarboxylic acid is glycolic acid, gluconic acid, acetic acid, gallic acid, or lactic acid.

14 . The composition of claim 10 , wherein the at least one second carboxylic acid comprises a polycarboxylic acid.

15 . The composition of claim 14 , wherein the polycarboxylic acid is a C 2 to C 10 polycarboxylic acid.

16 . The composition of claim 15 , wherein the polycarboxylic acid is oxalic acid, malonic acid, succinic acid, glutaric acid, citric acid, tartaric acid, malic acid, phthalic acid, or 1,2,3-benzenetricarboxylic acid.

17 . The composition of claim 10 , wherein the at least one second carboxylic acid is in the amount of from about 0.005% to about 3% by weight of the composition.

18 . The composition of claim 1 , wherein the at least one leveling agent comprises a sulfur-containing polymer or a nitrogen-containing polymer.

19 . The composition of claim 1 , wherein the at least one leveling agent comprises poly(4-styrene sulfonic acid), polyethylene imine, polyglycine, poly(allylamine), polyaniline, sulfonated polyaniline, polyurea, polyacrylamide, poly(melamine-co-formaldehyde), polyaminoamide, or polyalkanolamine.

20 . The composition of claim 1 , wherein the at least one leveling agent is in the amount of from about 0.01% to about 3% by weight of the composition.

21 . The composition of claim 1 , further comprising at least one metal corrosion inhibitor.

22 . The composition of claim 21 , wherein the at least one metal corrosion inhibitor comprises a substituted or unsubstituted azole.

23 . The composition of claim 22 , wherein the azole is a triazole, an imidazole, a thiadiazole, or a tetrazole.

24 . The composition of claim 21 , wherein the at least one metal corrosion inhibitor comprises a benzotriazole optionally substituted by at least one substituent selected from the group consisting of alkyl groups, aryl groups, halogen groups, amino groups, nitro groups, alkoxy groups, and hydroxyl groups.

25 . The composition of claim 21 , wherein the at least one metal corrosion inhibitor comprises a compound selected from the group consisting of benzotriazole, 5-am inobenzotriazole, 1-hydroxybenzotriazole, 5-phenylthiol-benzotriazole, 5-chlorobenzotriazole, 4-chlorobenzotriazole, 5-bromobenzotriazole, 4-bromobenzotriazole, 5-fluorobenzotriazole, 4-fluorobenzotriazole, naphthotriazole, tolyltriazole, 5-phenyl-benzotriazole, 5-nitrobenzotriazole, 4-nitrobenzotriazole, 3-amino-5-mercapto-1,2,4-triazole, 2-(5-amino-pentyl)-benzotriazole, 1-amino-benzotriazole, 5-methyl-1H-benzotriazole, benzotriazole-5-carboxylic acid, 4-methylbenzotriazole, 4-ethylbenzotriazole, 5-ethylbenzotriazole, 4-propylbenzotriazole, 5-propylbenzotriazole, 4-isopropylbenzotriazole, 5-isopropylbenzotriazole, 4-n-butylbenzotriazole, 5-n-butylbenzotriazole, 4-isobutylbenzotriazole, 5-isobutylbenzotriazole, 4-pentylbenzotriazole, 5-pentylbenzotriazole, 4-hexylbenzotriazole, 5-hexylbenzotriazole, 5-methoxybenzotriazole, 5-hydroxybenzotriazole, dihydroxypropylbenzotriazole, 1-[N,N-bis(2-ethylhexyl)aminomethyl]-benzotriazole, 5-t-butyl benzotriazole, 5-(1′,1′-diimethylpropyl)-benzotriazole, 5-(1′,1′,3′-trimethylbutyl)benzotriazole, 5-n-octyl benzotriazole, and 5-(1′,1′,3′,3′-tetramethylbutyl)benzotriazole.

26 . The composition of claim 21 , wherein the at least one metal corrosion inhibitor is in the amount of from about 0.005% to about 3% by weight of the composition.

27 . The composition of claim 1 , wherein the at least one chelating agent comprises a polyaminopolycarboxylic acid.

28 . The composition of claim 1 , wherein the at least one chelating agent comprises butylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, ethylenediaminetetrapropionic acid, triethylenetetraminehexaacetic acid, 1,3-diamino-2-hydroxypropane-N,N,N′,N′-tetraacetic acid, propylenediaminetetraacetic acid, ethylenediaminetetraacetic acid, trans-1,2-diaminocyclohexane tetraacetic acid, ethylendiamine diacetic acid, ethylendiamine dipropionic acid, 1,6-hexamethylene-diamine-N,N,N′,N′-tetraacetic acid, N,N-bis(2-hydroxybenzyl)ethylenediamine-N,N-diacetic acid, diaminopropane tetraacetic acid, iminodiacetic acid; 1,4,7,10-tetraazacyclododecane-tetraacetic acid, diaminopropanol tetraacetic acid, or (hydroxyethyl)ethylenediaminetriacetic acid.

29 . The composition of claim 1 , wherein the at least one chelating agent is in the amount of from about 0.005% to about 3% by weight of the composition.

30 . The composition of claim 1 , wherein the water is in the amount of from about 60% to about 99% by weight of the composition.

31 . The composition of claim 1 , further comprising at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers.

32 . The composition of claim 31 , wherein the at least one organic solvent is in the amount of from about 0.5% to about 30% by weight of the composition.

33 . The composition of claim 1 , further comprising at least one pH adjusting agent.

34 . The composition of claim 33 , wherein the at least one pH adjusting agent comprises a base or an acid.

35 . The composition of claim 34 , wherein the base is a quaternary ammonium hydroxide, ammonium hydroxide, an amine, an imine, or a guanidine salt.

36 . An etching composition,

Assignees

• Fujifilm Electronic Mat Usa Inc

Inventors

• Kneer Emil A

Classifications

• H10P50/642

  Chemical etching · CPC title

• H10P50/667

  by liquid etching only · CPC title

• C09K13/06 Primary

  with organic material · CPC title

• C09K13/00 Primary

  Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40}) · CPC title

• H01L21/30604

  Electricity · mapped topic