Slurry composition and method of manufacturing integrated circuit device by using the same

US2020392375A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2020392375-A1
Application numberUS-202016879283-A
CountryUS
Kind codeA1
Filing dateMay 20, 2020
Priority dateJun 14, 2019
Publication dateDec 17, 2020
Grant date

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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A slurry composition is disclosed which includes: a corrosion inhibitor including a material selected from carbon allotropes and derivatives thereof; and an oxidant. A method of manufacturing an integrated circuit device is disclosed which includes: forming a first metal film and a second metal film on a substrate, the first metal film and the second metal film respectively including different metals; and polishing, by using the slurry composition, a polishing target surface at which the first metal film and the second metal film are exposed.

First claim

Opening claim text (preview).

1 . A slurry composition comprising: a corrosion inhibitor comprising a carbon allotrope or a derivative thereof; and an oxidant. 2 . The slurry composition of claim 1 , wherein the corrosion inhibitor comprises a carbon allotrope derivative comprising a plurality of hydrophilic groups selected from the group consisting of a carboxyl group, a carbonyl group, an epoxy group, a hydroxyl group, a hydroperoxy group, a peroxy group, an isocyanate group, and a combination thereof 3 . The slurry composition of claim 1 , wherein the corrosion inhibitor comprises a carbon allotrope derivative selected from the group consisting of a graphene oxide, an oxidized 3-dimensional carbon structure, a fullerenol, and a combination thereof. 4 . The slurry composition of claim 1 , wherein the corrosion inhibitor is present in an amount of 1 ppm to 5000 ppm based on a total amount of the slurry composition. 5 . The slurry composition of claim 1 , wherein the corrosion inhibitor comprises graphene oxide having an average thickness selected from a range that is greater than 0 nm and equal to or less than 30 nm. 6 . The slurry composition of claim 1 , wherein the oxidant comprises a periodate. 7 . The slurry composition of claim 1 , wherein the slurry composition has a pH selected from a range of 7 to 11. 8 . The slurry composition of claim 1 , further comprising: polishing particles. 9 . The slurry composition of claim 8 , wherein each of the polishing particles comprises a metal oxide. 10 . The slurry composition of claim 1 , further comprising: at least one selected from the group consisting of a pH regulator, a polishing accelerator, a dispersion stabilizer, a surfactant, a defoamer, and a leveling agent. 11 . A slurry composition for chemical mechanical polishing (CMP) for polishing a metal-containing structure, the metal-containing structure comprises a first metal film and a second metal film, the first metal film comprising a first metal, and the second metal film comprising a second metal that is different from the first metal, the slurry composition comprising: a corrosion inhibitor, which has a chemical structure capable of selectively attaching to a surface of one selected from the first metal film and the second metal film and thus inhibits corrosion of the selected metal film; and an oxidant, which has a chemical structure capable of oxidizing each of the first metal film and the second metal film, wherein the corrosion inhibitor comprises a carbon allotrope or a derivative thereof. 12 . The slurry composition of claim 11 , wherein the corrosion inhibitor comprises a carbon allotrope derivative selected from the group consisting of a graphene oxide, an oxidized 3-dimensional carbon structure, a fullerenol, and a combination thereof. 13 . The slurry composition of claim 11 , further comprising: polishing particles, each comprising a metal oxide. 14 . The slurry composition of claim 11 , wherein the oxidant comprises a periodate, and the corrosion inhibitor comprises graphene oxide. 15 . A slurry composition for polishing a plurality of metal films respectively comprising heterogeneous metals, the slurry composition comprising: polishing particles, which are present in an amount that is greater than 0 wt % and less than 15 wt % based on a total weight of the slurry composition; a corrosion inhibitor, which comprises a carbon allotrope derivative comprising a plurality of hydrophilic groups containing an oxygen atom, and which is present in an amount of 1 ppm to 5000 ppm based on a total amount of the slurry composition; an oxidant, which is present in an amount of 0.1 wt % to 5 wt % based on the total weight of the slurry composition; and water. 16 . The slurry composition of claim 15 , wherein the plurality of hydrophilic groups are selected from the group consisting of a carboxyl group, a carbonyl group, an epoxy group, a hydroxyl group, a hydroperoxy group, a peroxy group, an isocyanate group, and a combination thereof. 17 . The slurry composition of claim 15 , wherein the carbon allotrope derivative is selected from the group consisting of a graphene oxide, an oxidized 3-dimensional carbon structure, a fullerenol, and a combination thereof. 18 . The slurry composition of claim 15 , wherein each of the polishing particles comprises a metal oxide. 19 . The slurry composition of claim 15 , wherein the slurry composition has a pH selected from a range of 7 to 11. 20 . The slurry composition of claim 15 , wherein each of the polishing particles comprises silica, the oxidant comprises sodium periodate (NaIO 4 ), and the corrosion inhibitor comprises graphene oxide. 21 - 43 . (canceled)

Assignees

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Classifications

  • of conductive or resistive materials · CPC title

  • of semiconductor materials · CPC title

  • by smoothing of conductive parts, e.g. by planarisation · CPC title

  • by filling conductive material into holes, grooves or trenches · CPC title

  • combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers · CPC title

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What does patent US2020392375A1 cover?
A slurry composition is disclosed which includes: a corrosion inhibitor including a material selected from carbon allotropes and derivatives thereof; and an oxidant. A method of manufacturing an integrated circuit device is disclosed which includes: forming a first metal film and a second metal film on a substrate, the first metal film and the second metal film respectively including different …
Who is the assignee on this patent?
Samsung Electronics Co Ltd, Seoul Nat Univ R&Db Foundation
What technology area does this patent fall under?
Primary CPC classification C09G1/02. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Dec 17 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).