Methods for chemical mechanical polishing and forming interconnect structure
US-2024290629-A1 · Aug 29, 2024 · US
US2020392375A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2020392375-A1 |
| Application number | US-202016879283-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 20, 2020 |
| Priority date | Jun 14, 2019 |
| Publication date | Dec 17, 2020 |
| Grant date | — |
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A slurry composition is disclosed which includes: a corrosion inhibitor including a material selected from carbon allotropes and derivatives thereof; and an oxidant. A method of manufacturing an integrated circuit device is disclosed which includes: forming a first metal film and a second metal film on a substrate, the first metal film and the second metal film respectively including different metals; and polishing, by using the slurry composition, a polishing target surface at which the first metal film and the second metal film are exposed.
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1 . A slurry composition comprising: a corrosion inhibitor comprising a carbon allotrope or a derivative thereof; and an oxidant. 2 . The slurry composition of claim 1 , wherein the corrosion inhibitor comprises a carbon allotrope derivative comprising a plurality of hydrophilic groups selected from the group consisting of a carboxyl group, a carbonyl group, an epoxy group, a hydroxyl group, a hydroperoxy group, a peroxy group, an isocyanate group, and a combination thereof 3 . The slurry composition of claim 1 , wherein the corrosion inhibitor comprises a carbon allotrope derivative selected from the group consisting of a graphene oxide, an oxidized 3-dimensional carbon structure, a fullerenol, and a combination thereof. 4 . The slurry composition of claim 1 , wherein the corrosion inhibitor is present in an amount of 1 ppm to 5000 ppm based on a total amount of the slurry composition. 5 . The slurry composition of claim 1 , wherein the corrosion inhibitor comprises graphene oxide having an average thickness selected from a range that is greater than 0 nm and equal to or less than 30 nm. 6 . The slurry composition of claim 1 , wherein the oxidant comprises a periodate. 7 . The slurry composition of claim 1 , wherein the slurry composition has a pH selected from a range of 7 to 11. 8 . The slurry composition of claim 1 , further comprising: polishing particles. 9 . The slurry composition of claim 8 , wherein each of the polishing particles comprises a metal oxide. 10 . The slurry composition of claim 1 , further comprising: at least one selected from the group consisting of a pH regulator, a polishing accelerator, a dispersion stabilizer, a surfactant, a defoamer, and a leveling agent. 11 . A slurry composition for chemical mechanical polishing (CMP) for polishing a metal-containing structure, the metal-containing structure comprises a first metal film and a second metal film, the first metal film comprising a first metal, and the second metal film comprising a second metal that is different from the first metal, the slurry composition comprising: a corrosion inhibitor, which has a chemical structure capable of selectively attaching to a surface of one selected from the first metal film and the second metal film and thus inhibits corrosion of the selected metal film; and an oxidant, which has a chemical structure capable of oxidizing each of the first metal film and the second metal film, wherein the corrosion inhibitor comprises a carbon allotrope or a derivative thereof. 12 . The slurry composition of claim 11 , wherein the corrosion inhibitor comprises a carbon allotrope derivative selected from the group consisting of a graphene oxide, an oxidized 3-dimensional carbon structure, a fullerenol, and a combination thereof. 13 . The slurry composition of claim 11 , further comprising: polishing particles, each comprising a metal oxide. 14 . The slurry composition of claim 11 , wherein the oxidant comprises a periodate, and the corrosion inhibitor comprises graphene oxide. 15 . A slurry composition for polishing a plurality of metal films respectively comprising heterogeneous metals, the slurry composition comprising: polishing particles, which are present in an amount that is greater than 0 wt % and less than 15 wt % based on a total weight of the slurry composition; a corrosion inhibitor, which comprises a carbon allotrope derivative comprising a plurality of hydrophilic groups containing an oxygen atom, and which is present in an amount of 1 ppm to 5000 ppm based on a total amount of the slurry composition; an oxidant, which is present in an amount of 0.1 wt % to 5 wt % based on the total weight of the slurry composition; and water. 16 . The slurry composition of claim 15 , wherein the plurality of hydrophilic groups are selected from the group consisting of a carboxyl group, a carbonyl group, an epoxy group, a hydroxyl group, a hydroperoxy group, a peroxy group, an isocyanate group, and a combination thereof. 17 . The slurry composition of claim 15 , wherein the carbon allotrope derivative is selected from the group consisting of a graphene oxide, an oxidized 3-dimensional carbon structure, a fullerenol, and a combination thereof. 18 . The slurry composition of claim 15 , wherein each of the polishing particles comprises a metal oxide. 19 . The slurry composition of claim 15 , wherein the slurry composition has a pH selected from a range of 7 to 11. 20 . The slurry composition of claim 15 , wherein each of the polishing particles comprises silica, the oxidant comprises sodium periodate (NaIO 4 ), and the corrosion inhibitor comprises graphene oxide. 21 - 43 . (canceled)
of conductive or resistive materials · CPC title
of semiconductor materials · CPC title
by smoothing of conductive parts, e.g. by planarisation · CPC title
by filling conductive material into holes, grooves or trenches · CPC title
combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers · CPC title
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