Nitride semiconductor light-emitting element

Patent metadata

Field	Value
Publication number	US-2020388725-A1
Application number	US-202016894015-A
Country	US
Kind code	A1
Filing date	Jun 5, 2020
Priority date	Jun 6, 2019
Publication date	Dec 10, 2020
Grant date	—

Abstract

A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN, and an active layer that includes AlGaN and is located on the n-type cladding layer. Si concentration distribution in a direction of stacking the n-type cladding layer and the active layer has a local peak in the active layer.

First claim

What is claimed is:

1 . A nitride semiconductor light-emitting element, comprising:
an n-type cladding layer comprising n-type AlGaN; and an active layer that comprises AlGaN and is located on the n-type cladding layer, wherein Si concentration distribution in a direction of stacking the n-type cladding layer and the active layer has a local peak in the active layer.

2 . The nitride semiconductor light-emitting element according to claim 1 , wherein the active layer comprises a single quantum well structure that comprises a single barrier layer comprising AlGaN and located on the n-type cladding layer side and a single well layer comprising AlGaN with a smaller Al composition than that of the AlGaN constituting the single barrier layer, and the Si concentration distribution has the peaks in the single well layer.

3 . The nitride semiconductor light-emitting element according to claim 1 , wherein the active layer comprises a plurality of barrier layers comprising a first barrier layer and a second barrier layer, the first barrier layer comprising AlGaN with an Al composition gradient from the n-type cladding layer side toward the active layer side and the second barrier layer comprising AlN and being provided on the first barrier layer, and the Si concentration distribution has the peaks in the plurality of barrier layers.

4 . The nitride semiconductor light-emitting element according to claim 3 , wherein the plurality of barrier layers further comprise a third barrier layer formed on the second barrier layer, and the Si concentration distribution has the peaks in the vicinity of the boundary between the second barrier layer and the third barrier layer.

5 . The nitride semiconductor light-emitting element according to claim 4 , wherein the active layer further comprises a single well layer formed on the third barrier layer, and the single well layer has a thickness of not less than 3.0 nm.

6 . The nitride semiconductor light-emitting element according to claim 1 , wherein the active layer comprises a multiple quantum well structure formed by alternately stacking a plurality of barrier layers and a plurality of well layers, and the Si concentration distribution has the peaks in a lower well layer that is one of the plurality of well layers and is located on the n-type cladding layer side.

7 . The nitride semiconductor light-emitting element according to claim 6 , further comprising:
a first barrier layer that comprises AlGaN with an Al composition gradient from the n-type cladding layer side toward the active layer side and is formed between the n-type cladding layer and the active layer, wherein the thickness of the first barrier layer is three to five times the thickness of any of the plurality of barrier layers or any of the plurality of well layers.

8 . The nitride semiconductor light-emitting element according to claim 6 , wherein the plurality of well layers comprise the lower well layer and an upper well layer located opposite to the n-type cladding layer relative to the lower well layer, and the lower well layer has a thickness that is not less than 3.0 nm and is 1.5 to 2.5 times the thickness of the upper well layer.

9 . The nitride semiconductor light-emitting element according to claim 1 , wherein the peak of the Si concentration has a value of not less than 1.0×10 18 atoms/cm 3 and not more than 1.0×10 20 atoms/cm 3 .

10 . The nitride semiconductor light-emitting element according to claim 1 , further comprising:
a substrate that is located under the n-type cladding layer and comprises a surface comprising AlN.

11 . The nitride semiconductor light-emitting element according to claim 1 , wherein the nitride semiconductor light-emitting element emits deep ultraviolet light at a central wavelength of 295 nm to 360 nm.

12 . The nitride semiconductor light-emitting element according to claim 6 , wherein the nitride semiconductor light-emitting element emits deep ultraviolet light at a central wavelength of 250 nm to 295 nm.

Assignees

• Nikkiso Co Ltd

Inventors

• Matsukura Yusuke
• Pernot Cyril

Classifications

• H10H20/815

  having stress relaxation structures, e.g. buffer layers · CPC title

• H10H20/8162

  Current-blocking structures · CPC title

• H10H20/01335

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/824

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title