Three-dimensional integrated package device for high-voltage silicon carbide power module

Patent metadata

Field	Value
Publication number	US-2020388595-A1
Application number	US-202016882301-A
Country	US
Kind code	A1
Filing date	May 22, 2020
Priority date	May 22, 2019
Publication date	Dec 10, 2020
Grant date	—

Abstract

The present invention relates to a three-dimensional integrated package device for a high-voltage silicon carbide power module, comprising a source substrate, first chip submodules, a first driving terminal, a first driving substrate, a ceramic housing, a metal substrate, a water inlet, a water outlet, second chip submodules, a second driving terminal, a second driving substrate and a drain substrate from top to bottom; and each first chip submodule is composed of a driving connection substrate, a power source metal block, a first driving gate metal post, second driving gate metal posts, a silicon carbide bare chip, an insulation structure and the like. A three-dimensional integrated half-bridge structure is adopted to greatly reduce corresponding parasitic parameters.

First claim

We claim:

1 . A three-dimensional integrated package device for a high-voltage silicon carbide power module, comprising a source substrate ( 1 ), a housing ( 3 ), a metal substrate ( 8 ), a drain substrate ( 5 ) and a driving layer ( 27 ), wherein the metal substrate ( 8 ) is arranged in the housing ( 3 ); and the source substrate ( 1 ) and the drain substrate ( 5 ) are hermetically connected with both ends of the housing ( 3 ) respectively;
the driving layer ( 27 ) comprises a first driving layer ( 28 ) and a second driving layer ( 29 ); the first driving layer ( 28 ) and the second driving layer ( 29 ) are of the same structure; the first driving layer ( 28 ) comprises a first driving substrate ( 6 ) and first chip submodules ( 7 ); the second driving layer ( 29 ) comprises a second driving substrate ( 11 ) and second chip submodules ( 12 ); the first driving substrate ( 6 ) and the first chip submodules ( 7 ) form a half-bridge structure; a first driving terminal ( 2 ) is arranged on the first driving substrate ( 6 ); a second driving terminal ( 4 ) is arranged on the second driving substrate ( 11 ); and the first driving terminal ( 2 ) and the second driving terminal ( 4 ) respectively penetrate through the housing ( 3 ) and extend out of the housing ( 3 ); the first chip submodules ( 7 ) and the second chip submodules ( 12 ) are of the same structure; each first chip submodule ( 7 ) comprises a driving connection substrate ( 20 ), a power source metal block ( 21 ), a first driving gate metal post ( 22 ), second driving gate metal posts ( 23 ), a silicon carbide bare chip ( 24 ) and an insulation structure ( 25 ); one end of the power source metal block ( 21 ) is sintered with a source ( 24 - 2 ) on the silicon carbide bare chip ( 24 ), and the other end of the power source metal block ( 21 ) penetrates through the first driving substrate ( 6 ); one end of the first driving gate metal post ( 22 ) is sintered with a gate ( 24 - 1 ) on the silicon carbide bare chip ( 24 ), and the other end of the first driving gate metal post ( 22 ) is sintered with the driving connection substrate ( 20 ); one end of each second driving gate metal post ( 23 ) is sintered with the source ( 24 - 2 ) on the silicon carbide bare chip ( 24 ), and the other ends of the second driving gate metal posts ( 23 ) are sintered with the driving connection substrate ( 20 ); the insulation structure ( 25 ) is arranged around the silicon carbide bare chip ( 24 ); and the driving connection substrate ( 20 ) is sintered with the first driving substrate ( 6 ); the first driving layer ( 28 ) and the second driving layer ( 29 ) are both arranged in the housing ( 3 ); the first driving layer ( 28 ) is arranged between the source substrate ( 1 ) and the metal substrate ( 8 ); the other ends of the power source metal blocks ( 21 ) in the first driving layer ( 28 ) are further sintered with the source substrate ( 1 ); and drains ( 24 - 3 ) of the silicon carbide bare chips ( 24 ) in the first driving layer ( 28 ) are sintered with the metal substrate ( 8 ); the second driving layer ( 29 ) is arranged between the drain substrate ( 5 ) and the metal substrate ( 8 ); the other ends of the power source metal blocks ( 21 ) of the second driving layer ( 29 ) are further sintered with the metal substrate ( 8 ); and the drains ( 24 - 3 ) of the silicon carbide bare chips ( 24 ) of the second driving, layer ( 29 ) are sintered with the drain substrate ( 5 ).

2 . The three-dimensional integrated package device for the high-voltage silicon carbide power module according to claim 1 , wherein a water cooling channel ( 31 ) is formed inside the metal substrate ( 8 ); the water cooling channel is connected with a water inlet ( 9 ) and a water outlet ( 10 ); and the water inlet ( 9 ) and the water outlet ( 10 ) penetrate through the housing ( 3 ) and extend out of the housing ( 3 ).

3 . The three-dimensional integrated package device for the high-voltage silicon carbide power module according to claim 1 , wherein decoupling capacitors ( 13 ) are connected between the source substrate ( 1 ) and the drain substrate ( 5 ).

4 . The three-dimensional integrated package device for the high-voltage silicon carbide power module according to claim 3 , wherein the decoupling capacitors ( 13 ) are arranged outside the housing ( 3 ); each decoupling capacitor ( 13 ) comprises a capacitor substrate ( 16 ) and high-voltage capacitors ( 15 ) arranged on the capacitor substrate ( 16 ); two electrodes of the high-voltage capacitors ( 15 ) are respectively connected with the source substrate ( 1 ) and the drain substrate ( 5 ); and the capacitor substrate ( 16 ) and the high-voltage capacitors ( 15 ) are coated in an insulating layer ( 14 ).

5 . The three-dimensional integrated package device for the high-voltage silicon carbide power module according to claim 4 , wherein a plurality of high-voltage capacitors ( 15 ) are provided; the plurality of high-voltage capacitors ( 15 ) are connected with each other in series; and the two electrodes after the plurality of high-voltage capacitors ( 15 ) are connected in

6 . series are respectively connected with the source substrate ( 1 ) and the drain substrate ( 5 ).

7 . The three-dimensional integrated package device for the high-voltage silicon carbide power module according to claim 1 , wherein the first driving gate metal post ( 22 ) and the second driving gate metal posts ( 23 ) are all located at the same side of each power source metal block ( 21 ).

8 . The three-dimensional integrated package device for the high-voltage silicon carbide power module according to claim 1 , wherein through holes ( 30 ) are formed in the driving connection substrates ( 20 ); the driving connection substrates ( 20 ) are sleeved on the power source metal blocks ( 21 ) through the through holes ( 30 ); and gaps are reserved between the thiving connection substrates ( 20 ) and the you source metal blocks ( 21 ).

9 . The three-dimensional integrated package device for the high-voltage silicon carbide power module according to claim 1 , wherein the first driving gate metal posts ( 22 ) and the second driving gate metal posts ( 23 ) are of the same height.

10 . The three-dimensional integrated package device for the high-voltage silicon carbide power module according to claim 1 , wherein nano-silver sintering is used as a sintering manner

Assignees

• Univ Xi An Jiaotong

Inventors

• Wang Laili
• Hou Xiaodong
• Zhao Cheng
• Wang Jianpeng
• Ma Dingkun
• Yang Chengzi
• Yang Xu

Classifications

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/352

  comprising metals or metalloids, e.g. solders · CPC title

• H10W72/325

  Die-attach connectors having a filler embedded in a matrix · CPC title

• H10W72/00

  Interconnections or connectors in packages · CPC title

• H10W40/47 Primary

  by flowing liquids, e.g. forced water cooling · CPC title