Laser irradiation device, projection mask and laser irradiation method

Patent metadata

Field	Value
Publication number	US-2020388495-A1
Application number	US-201816763082-A
Country	US
Kind code	A1
Filing date	Dec 26, 2018
Priority date	Jan 24, 2018
Publication date	Dec 10, 2020
Grant date	—

Abstract

A laser irradiation device includes a light source that generates laser light; a projection lens that radiates the laser light to a predetermined region of an amorphous silicon thin film deposited on a thin film transistor; and a projection mask including a plurality of opening portions disposed on the projection lens and through which the laser light passes, wherein a predetermined pattern that is able to reduce diffraction of the laser light is formed at a peripheral edge portion of each of the plurality of opening portions.

First claim

1 - 11 . (canceled)

12 . A laser irradiation device comprising:
a light source that generates laser light; a projection lens that radiates the laser light to a predetermined region of an amorphous silicon thin film deposited on a thin film transistor; and a projection mask including a plurality of opening portions disposed on the projection lens and through which the laser light passes, wherein a predetermined pattern that is able to reduce diffraction of the laser light is formed at a peripheral edge portion of each of the plurality of opening portions.

13 . The laser irradiation device according to claim 12 , wherein the predetermined pattern is a pattern in which arcs or polygons having a predetermined size are continuous.

14 . The laser irradiation device according to claim 13 , wherein:
the projection lens is a plurality of micro-lenses included in a micro-lens array that is able to divide the laser light, and the predetermined size is equal to or less than a performance of the micro-lens array.

15 . The laser irradiation device according to claim 12 , wherein:
the projection lens is a plurality of micro-lenses included in a micro-lens array that is able to divide the laser light, the predetermined pattern is a sine wave or a rectangular wave, and a wavelength or an amplitude of the sine wave or the rectangular wave is equal to or less than a performance of the micro-lens array in resolution.

16 . The laser irradiation device according to claim 12 , wherein each of the plurality of opening portions has a substantially rectangular shape, and the predetermined pattern is formed on a peripheral edge portion of at least one of a long side and a short side of the rectangular shape.

17 . A projection mask disposed on a projection lens that radiates laser light, comprising:
a plurality of opening portions through which the laser light from the projection lens is transmitted to a predetermined region of an amorphous silicon thin film deposited on a thin film transistor, wherein a predetermined pattern that is able to reduce diffraction of the laser light is formed at a peripheral edge portion of each of the plurality of opening portions.

18 . The projection mask according to claim 17 , wherein the predetermined pattern is a pattern in which arcs or polygons having a predetermined size are continuous.

19 . The projection mask according to claim 18 , wherein:
the projection lens is a plurality of micro-lenses included in a micro-lens array that is able to divide the laser light, and the predetermined size is equal to or less than a performance of the micro-lens array in resolution.

20 . The projection mask according to claim 17 , wherein:
the projection lens is a plurality of micro-lenses included in a micro-lens array that is able to divide the laser light, the predetermined pattern is a sine wave or a rectangular wave, and a wavelength or an amplitude of the sine wave or the rectangular wave is equal to or less than a performance of the micro-lens array in resolution.

21 . The projection mask according to claim 17 , wherein each of the plurality of opening portions has a substantially rectangular shape, and the predetermined pattern is formed on a peripheral edge portion of at least one of a long side and a short side of the rectangular shape.

22 . A laser irradiation method comprising:
generating laser light; transmitting the laser light through a projection mask including a plurality of opening portions disposed on a projection lens and through which the laser light passes; and irradiating a predetermined region of an amorphous silicon thin film deposited on a thin film transistor with the laser light through the projection mask, wherein a predetermined pattern that is able to reduce diffraction of the laser light is formed at a peripheral edge portion of each of the plurality of opening portions.

Assignees

• V Tech Co Ltd

Inventors

• Mizumura Michinobu

Classifications

• H10P14/3812 Primary

  Shape of mask · CPC title

• H10W20/041

  the barrier, adhesion or liner layers being discontinuous · CPC title

• H10P34/42 Primary

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/2922

  being non-crystalline insulating materials, e.g. glass or polymers · CPC title