Semiconductor device

Patent metadata

Field	Value
Publication number	US-2020366281-A1
Application number	US-202016983317-A
Country	US
Kind code	A1
Filing date	Aug 3, 2020
Priority date	Aug 9, 2018
Publication date	Nov 19, 2020
Grant date	—

Abstract

A semiconductor device including: an output element including a power supply side electrode region and an output side electrode region and configured to flow main current between the power supply side electrode region and the output side electrode region; an internal circuit including a sensor circuit configured to detect an abnormality; and a package in which the output element and the internal circuit are built, the package including a primary lead terminal and a secondary lead terminal, wherein the primary lead terminal electrically draws out an intermediate node in wiring of a primary detection circuit constituting the sensor circuit to an outside, the secondary lead terminal electrically draws out a terminal of a secondary detection circuit separable from the primary detection circuit to the outside, and depending on a connection state between the primary and secondary lead terminals, a reference value for detecting the abnormality can be changed.

First claim

1 . A semiconductor device comprising:
an output element including a power supply side electrode region electrically connected to a power supply side main electrode and an output side electrode region electrically connected to an output side main electrode and configured to flow main current between the power supply side electrode region and the output side electrode region; an internal circuit including a sensor circuit configured to detect an abnormality; and a package in which the output element and the internal circuit are built, the package including a primary lead terminal and a secondary lead terminal, wherein the primary lead terminal electrically draws out an intermediate node in wiring of a primary detection circuit constituting the sensor circuit to an outside, the secondary lead terminal electrically draws out a terminal of a secondary detection circuit separable from the primary detection circuit to the outside and can be electrically connected to the primary lead terminal on the outside, and by changing circuit connection of the sensor circuit based on a connection state between the primary lead terminal and the secondary lead terminal, at least a portion of the internal circuit functions as a reference value change circuit changing a reference value for detecting the abnormality.

2 . The semiconductor device according to claim 1 , wherein
a pad disposed on an upper surface of a semiconductor chip into which the output element and the internal circuit are integrated and electrically connected to the intermediate node of the primary detection circuit is electrically connected to the primary lead terminal, and a pad disposed on the upper surface of the semiconductor chip and electrically connected to the terminal of the secondary detection circuit is electrically connected to the secondary lead terminal.

3 . The semiconductor device according to claim 1 , wherein
the internal circuit further includes a drive circuit electrically connected to a control electrode of the output element.

4 . The semiconductor device according to claim 1 , wherein
the sensor circuit includes:
a sense element including one main electrode region electrically connected to the power supply side electrode region of the output element;
a primary overcurrent detection element including an anode connected to an other main electrode region of the sense element; and
a secondary overcurrent detection element including a cathode that is common to the primary overcurrent detection element and the secondary current detection element,
the internal circuit further includes an overcurrent control unit having two input terminals respectively electrically connected to the output side electrode region and the anode of the primary overcurrent detection element and detect overcurrent as the abnormality, and the anode of the primary overcurrent detection element is electrically connected to the primary lead terminal, and an anode of the secondary overcurrent detection element is electrically connected to the secondary lead terminal.

5 . The semiconductor device according to claim 4 , wherein
the sensor circuit sets, as a reference value, a current value flowing into the primary overcurrent detection element when the primary lead terminal and the secondary lead terminal are open-circuited and a sum of current values respectively flowing into the primary overcurrent detection element and the secondary overcurrent detection element when the primary lead terminal and the secondary lead terminal are short-circuited to each other on the outside, and the overcurrent control unit, by comparing output current flowing from the output side electrode region to an external load with the reference value, performs control in such a way as to recover from overcurrent.

6 . The semiconductor device according to claim 1 , wherein
the internal circuit further includes a temperature control unit configured to detect over temperature as the abnormality, the sensor circuit includes:
a constant current element including an anode electrically connected to the power supply side electrode region;
a primary over temperature detection circuit including an anode electrically connected to a cathode of the constant current element; and
a secondary over temperature detection element including an anode electrically connected to a cathode of the primary over temperature detection circuit,
the temperature control unit is electrically connected to the anode of the primary over temperature detection circuit, and a connection node between the primary over temperature detection circuit and the secondary over temperature detection element is electrically connected to the primary lead terminal, and the cathode of the secondary over temperature detection element is electrically connected to the secondary lead terminal.

7 . The semiconductor device according to claim 6 , wherein
the temperature control unit, by comparing, with a reference value, a measured value of forward voltage across a series connection of the primary over temperature detection element and the secondary over temperature detection element, the measured value being measured while constant current is flowed from the constant current element, when the primary lead terminal and the secondary lead terminal are open-circuited and a measured value of forward voltage across the primary over temperature detection element, the measured value being measured while constant current is flowed from the constant current element, when the primary lead terminal and the secondary lead terminal are short-circuited to each other on the outside, performs control in such a way as to recover from the over temperature.

8 . The semiconductor device according to claim 1 , wherein
the sensor circuit includes a first resistance element one end of which is electrically connected to the power supply side electrode region, a second resistance element connected in series to the first resistance element, a third resistance element connected in series to the second resistance element, and a fourth resistance element connected in series to the third resistance element, the internal circuit further includes an undervoltage control unit electrically connected to a connection node between the second resistance element and the third resistance element and configured to detect undervoltage as the abnormality, the primary lead terminal is electrically connected to the power supply side electrode region, and the secondary lead terminal is electrically connected to a connection node between the first resistance element and the second resistance element.

9 . The semiconductor device according to claim 8 , wherein
the undervoltage control unit, by comparing, with a preset reference value for undervoltage detection, a voltage value determined by a voltage dividing ratio between a resistance value of a series connection of the first resistance element and the second resistance element and a resistance value of a series connection of the third resistance element and the fourth resistance element when the primary lead terminal and the secondary lead terminal are open-circuited and a voltage value determined by a voltage dividing ratio between a resistance value of the second resistance element and a resistance value of a series connection of the third resistance element and the fourth resistance element when the primary lead terminal and the secondary lead terminal are short-circuited to each other on the outside, performs control in such a way as to recover from the undervoltage.

10 . The semiconductor device according to claim 8 , further comprising
a lead terminal for power supply electrically connected to the power supply side

Assignees

• Fuji Electric Co Ltd

Inventors

• Iwata Hideki

Classifications

• H10D89/601

  for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs · CPC title

• H03K2217/0027

  Measuring means of, e.g. currents through or voltages across the switch · CPC title

• H03K2217/0081

  Power supply means, e.g. to the switch driver · CPC title

• H03K17/0828 Primary

  in composite switches · CPC title

• H01L27/0251

  Electricity · mapped topic