Apparatus and methods for low noise amplifiers with mid-node impedance networks

Patent metadata

Field	Value
Publication number	US-2020366256-A1
Application number	US-202016841367-A
Country	US
Kind code	A1
Filing date	Apr 6, 2020
Priority date	Aug 18, 2016
Publication date	Nov 19, 2020
Grant date	—

Abstract

Apparatus and methods for LNAs with mid-node impedance networks are provided herein. In certain configurations, an LNA includes a mid-node impedance circuit including a resistor and a capacitor electrically connected in parallel, a cascode device electrically connected between an output terminal and the mid-node impedance circuit, and a transconductance device electrically connected between the mid-node impedance circuit and ground. The transconductance device amplifies a radio frequency signal received from an input terminal. The LNA further includes a feedback bias circuit electrically connected between the output terminal and the input terminal and operable to control an input bias voltage of the transconductance device.

First claim

1 . (canceled)

2 . A low noise amplifier comprising:
a bipolar gain transistor including a base configured to receive a radio frequency signal from an input terminal; a bipolar cascode transistor including a collector configured to provide an amplified radio frequency signal to an output terminal; a mid-node impedance circuit including a resistor and a capacitor in parallel with one another between an emitter of the bipolar cascode transistor and a collector of the bipolar gain transistor; and a feedback bias circuit electrically connected between the collector of the bipolar cascode transistor and the base of the bipolar gain transistor, the feedback bias circuit operable to control an input bias voltage of the bipolar gain transistor.

3 . The low noise amplifier of claim 2 wherein the feedback bias circuit includes a first bias resistor, a bias diode, and a second bias resistor in series between the base of the bipolar gain transistor and the collector of the bipolar cascode transistor.

4 . The low noise amplifier of claim 2 wherein the feedback bias circuit includes a first bias resistor electrically connected between the base of the bipolar gain transistor and a ground voltage, and a second bias resistor electrically connected between the base of bipolar gain transistor and the collector of the bipolar cascode transistor.

5 . The low noise amplifier of claim 4 wherein the feedback bias circuit further includes a third bias resistor electrically connected between the collector of the bipolar cascode transistor and a base of the bipolar cascode transistor.

6 . The low noise amplifier of claim 2 further comprising a degeneration inductor electrically connected between an emitter of the bipolar gain transistor and a ground voltage.

7 . The low noise amplifier of claim 2 wherein the mid-node impedance network further includes an inductor in parallel with the resistor and the capacitor.

8 . The low noise amplifier of claim 2 wherein the mid-node impedance network further includes a first shunt capacitor between the collector of the bipolar gain transistor and a ground voltage.

9 . The low noise amplifier of claim 8 wherein the mid-node impedance network further includes a second shunt capacitor between the emitter of the bipolar cascode transistor and the ground voltage.

10 . The low noise amplifier of claim 2 further comprising a bias current source and an inductor electrically connected in series between a supply voltage and the collector of the bipolar cascode transistor.

11 . A packaged module comprising:
a package substrate; and a semiconductor die attached to the packaged substrate and including a low noise amplifier fabricated thereon, the semiconductor die including a bipolar gain transistor including a base configured to receive a radio frequency signal from an input terminal, a bipolar cascode transistor including a collector configured to provide an amplified radio frequency signal to an output terminal, a mid-node impedance circuit including a resistor and a capacitor in parallel with one another between an emitter of the bipolar cascode transistor and a collector of the bipolar gain transistor, and a feedback bias circuit electrically connected between the collector of the bipolar cascode transistor and the base of the bipolar gain transistor, the feedback bias circuit operable to control an input bias voltage of the bipolar gain transistor.

12 . The packaged module of claim 11 wherein the feedback bias circuit includes a first bias resistor, a bias diode, and a second bias resistor in series between the base of the bipolar gain transistor and the collector of the bipolar cascode transistor.

13 . The packaged module of claim 11 wherein the feedback bias circuit includes a first bias resistor electrically connected between the base of the bipolar gain transistor and a ground voltage, and a second bias resistor electrically connected between the base of bipolar gain transistor and the collector of the bipolar cascode transistor.

14 . The packaged module of claim 13 further comprising a third bias resistor electrically connected between the collector of the bipolar cascode transistor and a base of the bipolar cascode transistor.

15 . The packaged module of claim 11 wherein the mid-node impedance network further includes a first shunt capacitor between the collector of the bipolar gain transistor and a ground voltage.

16 . The packaged module of claim 15 wherein the mid-node impedance network further includes a second shunt capacitor between the emitter of the bipolar cascode transistor and the ground voltage.

17 . A mobile device comprising:
an antenna; and a front end system including a low noise amplifier having an input terminal configured to receive a radio frequency signal from the antenna and an output terminal configured to output an amplified radio frequency signal, the low noise amplifier including a bipolar gain transistor including a base configured to receive the radio frequency signal, a bipolar cascode transistor including a collector configured to generate the amplified radio frequency signal, a mid-node impedance circuit including a resistor and a capacitor in parallel with one another between an emitter of the bipolar cascode transistor and a collector of the bipolar gain transistor, and a feedback bias circuit electrically connected between the collector of the bipolar cascode transistor and the base of the bipolar gain transistor, the feedback bias circuit operable to control an input bias voltage of the bipolar gain transistor.

18 . The mobile device of claim 17 further comprising a transceiver configured to receive the amplified radio frequency signal.

19 . The mobile device of claim 17 wherein the feedback bias circuit includes a first bias resistor, a bias diode, and a second bias resistor in series between the base of the bipolar gain transistor and the collector of the bipolar cascode transistor.

20 . The mobile device of claim 17 wherein the feedback bias circuit includes a first bias resistor electrically connected between the base of the bipolar gain transistor and a ground voltage, and a second bias resistor electrically connected between the base of bipolar gain transistor and the collector of the bipolar cascode transistor.

21 . The mobile device of claim 20 further comprising a third bias resistor electrically connected between the collector of the bipolar cascode transistor and a base of the bipolar cascode transistor.

Assignees

• Skyworks Solutions Inc

Inventors

• Pehlivanoglu Engin Ibrahim

Classifications

• H03F1/22

  by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively · CPC title

• H03F1/0266 Primary

  by using a signal derived from the input signal · CPC title

• H03F2200/451

  the amplifier being a radio frequency amplifier · CPC title

• H03F3/193

  with field-effect devices (H03F3/195 takes precedence) · CPC title

• H03F3/245

  with semiconductor devices only · CPC title