Modular multilevel converter sub-module having dc fault current blocking function and method of controlling the same

US2020366186A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2020366186-A1
Application numberUS-202016844447-A
CountryUS
Kind codeA1
Filing dateApr 9, 2020
Priority dateMay 14, 2019
Publication dateNov 19, 2020
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

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Disclosed is a modular multilevel converter sub-module, including: a normal circuit which includes a first switching element and a second switching element connected in series and a first diode and a second diode respectively connected to be parallel to the first switching element and the second switching element to offset a counter electromotive force generated in the first switching element and the second switching element, a fault DC current blocking circuit which includes a capacitor connected to the normal circuit in parallel and applies a capacitor voltage to a DC fault path as a reverse voltage with respect to a fault voltage, and a bypass circuit which includes a third switch element, is connected to the fault DC current blocking circuit in parallel, and determines an output voltage and a direction of an arm current to provide a DC fault current bypass path when a DC fault current occurs.

First claim

Opening claim text (preview).

1 . A modular multilevel converter sub-module having a direct current (DC) fault current blocking function, comprising: a normal circuit which includes a first switching element (T 1 ) and a second switching element (T 2 ) connected in series to control the modular multilevel converter sub-module to turn on or off through an on or off operation and a first diode (D 1 ) and a second diode (D 2 ) respectively connected to be parallel to the first switching element (T 1 ) and the second switching element (T 2 ) to offset a counter electromotive force generated in the first switching element (T 1 ) and the second switching element (T 2 ); a fault DC current blocking circuit which includes a capacitor (C) connected to the normal circuit in parallel and applies a capacitor voltage (V cap ) to a DC fault path as a reverse voltage (V Block ) with respect to a fault voltage (V Fault ); and a bypass circuit which includes a third switch element (T 3 ), is connected to the fault DC current blocking circuit in parallel, and determines an output voltage (V SM ) and a direction of an arm current (i ARM ) to provide a DC fault current bypass path when a DC fault current occurs. 2 . The modular multilevel converter sub-module of claim 1 , wherein the bypass circuit includes the third switching element (T 3 ), a third diode (D 3 ), a thyristor (TH 3 ), and a fourth diode (D 4 ), wherein the third switching element (T 3 ), the third diode (D 3 ), and the thyristor (TH 3 ) are connected in parallel and connected to the fourth diode (D 4 ), which is connected to the first switching element (T 1 ), in series to form a fault DC current path. 3 . The modular multilevel converter sub-module of claim 1 , wherein the first switching element (T 1 ), the second switching element (T 2 ), and the third switching element (T 3 ) each include an insulated gate bipolar transistor (IGBT). 4 . The modular multilevel converter sub-module of claim 1 , wherein, in a case in which the direction of the arm current (i ARM ) in a normal operation is positive (i ARM >0), a current always flows through the third diode (D 3 ) of the bypass circuit, when the first switching element (T 1 ) is switched on, a current flows to the first diode (D 1 ), and the capacitor voltage (V cap ) of the fault DC current blocking circuit is output, and when the second switching element (T 2 ) is switched on, a current flows to the second switching element (T 2 ), and a sub-module voltage becomes zero. 5 . The modular multilevel converter sub-module of claim 1 , wherein, in a case in which the direction of the arm current i ARM in a normal operation is positive (i ARM >0), when the modular multilevel converter sub-module is turned on, the modular multilevel converter sub-module has a switching state in which the first switching element (T 1 ) is switched on, the second switching element (T 2 ) is switched off, the third switching element (T 3 ) is switched off, and the thyristor (TH 3 ) is switched off, and when the modular multilevel converter sub-module is turned off, the modular multilevel converter sub-module has a switching state in which the first switching element (T 1 ) is switched off, the second switching element (T 2 ) is switched on, the third switching element (T 3 ) is switched off, and the thyristor (TH 3 ) is switched off. 6 . The modular multilevel converter sub-module of claim 1 , wherein, in a case in which the direction of the arm current (i ARM ) in a normal operation is negative (i ARM <0), a current flows through the third switching element (T 3 ) and the thyristor (TH 3 ), when the first switching element (T 1 ) is switched on, a current flows to the first switching element (T 1 ), and the capacitor voltage (V cap ) of the fault DC current blocking circuit is output, and when the second switching element (T 2 ) is switched on, a current flows to the second diode (D 2 ), and a sub-module voltage becomes zero. 7 . The modular multilevel converter sub-module of claim 1 , wherein, in a case in which the direction of the arm current i ARM in a normal operation is negative (i ARM <0), when the modular multilevel converter sub-module is turned on, the modular multilevel converter sub-module has a switching state in which the first switching element (T 1 ) is switched on, the second switching element (T 2 ) is switched off, the third switching element (T 3 ) is switched on, and the thyristor (TH 3 ) is switched on, and when the modular multilevel converter sub-module is turned off, the modular multilevel converter sub-module has a switching state in which the first switching element (T 1 ) is switched off, the second switching element (T 2 ) is switched on, the third switching element (T 3 ) is switched on, and the thyristor (TH 3 ) is switched on. 8 . The modular multilevel converter sub-module of claim 1 , wherein, during a fault operation, a current flows in a negative direction (i Fault <0), and when the third switching element (T 3 ) and the thyristor (TH 3 ) are switched off during a fault, a current flows to the fourth diode (D 4 ) and the second diode (D 2 ) so that the capacitor voltage (V cap ) is applied to the DC fault path as the reverse voltage (V Block ) with respect to the fault voltage (V Fault ) to block a fault DC current. 9 . The modular multilevel converter sub-module of claim 1 , wherein, during a fault operation, the modular multilevel converter sub-module has a switching state in which the first switching element (T 1 ) is switched off, the second switching element (T 2 ) is switched off, the third switching element (T 3 ) is switched off, and the thyristor (TH 3 ) is switched off. 10 . A method of controlling a modular multilevel converter sub-module having a direct current (DC) fault current blocking function, which includes a normal circuit which includes a first switching element (T 1 ) and a second switching element (T 2 ) connected in series to control the modular multilevel converter sub-module to turn on or off through an on or off operation and a first diode (D 1 ) and a second diode (D 2 ) respectively connected to be parallel to the first switching element (T 1 ) and the second switching element (T 2 ) to offset a counter electromotive force generated in the first switching element (T 1 ) and the second switching element (T 2 ), a fault DC current blocking circuit which includes a capacitor (C) connected to the normal circuit in parallel and applies a capacitor voltage (V cap ) to a DC fault path as a reverse voltage (V Block ) with respect to a fault voltage (V Fault ), and a bypass circuit which includes a third switching element (T 3 ), a third diode (D 3 ), a thyristor (TH 3 ), and a fourth diode (D 4 ), wherein the third switching element (T 3 ), the third diode (D 3 ), and the thyristor (TH 3 ) are connected in parallel and are connected to the fourth diode (D 4 ) which is connected to the first switching element (T 1 ), in series to form a fault DC current path, the method comprising: when a fault occurs, switching the third switching element (T 3 ) and the thyristor (TH 3 ) off to allow a current to flow to the fourth diode (D 4 ) and the second diode (D 2 ); and applying the capacitor voltage (V cap ) to the DC fault path as the reverse voltage (V Block ) with respect to the fault voltage (V Fault ) to block a fault DC current. 11 . The method of claim 10 , wherein, when the fault occurs, the modular multilevel converter sub-module has a switching state in which the first switching element (T 1 ) is switched off, the second switching element (T 2 ) is switched off, the third switching element (T 3 ) is switched off, and the thyristor (TH 3 ) is switched off. 12 . The method

Assignees

Inventors

Classifications

  • H02M7/483Primary

    Converters with outputs that each can have more than two voltages levels · CPC title

  • comprising two or more cells, each including a switchable capacitor, the capacitors having a nominal charge voltage which corresponds to a given fraction of the input voltage, and the capacitors being selectively connected in series to determine the instantaneous output voltage · CPC title

  • H02M1/32Primary

    Means for protecting converters other than automatic disconnection · CPC title

  • Circuits or arrangements for reducing losses (using snubbers H02M1/34) · CPC title

  • Means for rapidly discharging a capacitor of the converter for protecting electrical components or for preventing electrical shock · CPC title

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What does patent US2020366186A1 cover?
Disclosed is a modular multilevel converter sub-module, including: a normal circuit which includes a first switching element and a second switching element connected in series and a first diode and a second diode respectively connected to be parallel to the first switching element and the second switching element to offset a counter electromotive force generated in the first switching element a…
Who is the assignee on this patent?
Univ Yonsei Iacf
What technology area does this patent fall under?
Primary CPC classification H02M7/483. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Nov 19 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).