Manufacturing method for photomask, and photomask
US-2024427229-A1 · Dec 26, 2024 · US
US2020363713A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2020363713-A1 |
| Application number | US-201916967789-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 15, 2019 |
| Priority date | Feb 18, 2018 |
| Publication date | Nov 19, 2020 |
| Grant date | — |
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A method to determine a mask pattern for a patterning device. The method includes obtaining a target pattern to be printed on a substrate, an initial continuous tone image corresponding to the target pattern, a binarization function (e.g., a sigmoid, an arctan, a step function, etc.) configured to transform the initial continuous tone image, and a process model configured to predict a pattern on the substrate from an output of the binarization function; and generating a binarized image having a mask pattern corresponding to the initial continuous tone image by iteratively updating the initial continuous tone image based on a cost function such that the cost function is reduced. The cost function (e.g., EPE) determines a difference between a predicted pattern determined by the process model and the target pattern.
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1 . A method comprising: obtaining (i) a target pattern to be printed on a substrate subjected to a patterning process, (ii) an initial continuous tone image corresponding to the target pattern, (iii) a binarization function configured to transform the initial continuous tone image, and (iv) a process model configured to predict a pattern on the substrate from an output of the binarization function; and generating, by a hardware computer system, a binarized image having a mask pattern for a patterning device and corresponding to the initial continuous tone image by iteratively updating the initial continuous tone image based on a cost function such that the cost function is reduced, wherein the cost function determines a difference between a predicted pattern determined by the process model and the target pattern. 2 . The method of claim 1 , wherein the binarization function is a sigmoid function, an arctan function, and/or a step function. 3 . The method of claim 1 , wherein the mask pattern is a curvilinear pattern and/or a Manhattan pattern. 4 . The method of claim 1 , wherein an iteration of determining the curvilinear pattern comprises: generating a transformed image by applying a binarization function to the initial continuous tone image; predicting, via simulation of the process model, a pattern from the transformed image; determining a gradient of the cost function; and modifying a value of one or more mask variables corresponding to the initial continuous tone image and/or one or more parameters of the binarization function based on the gradient of the cost function such that the cost function is reduced. 5 . The method of claim 4 , wherein the determining the gradient of the cost function involves computing a complete gradient over mask variables for the binarization function. 6 . The method of claim 4 , wherein modifying a value of one or more mask variables and/or one or more parameters of the binarization function comprises: applying an optimization process to the gradient of the cost function; and identifying a value of one or more the mask variables and/or one or more parameters of the binarization function that result in a minimum gradient value. 7 . The method of claim 6 , comprising modifying a value of one or more mask variables and wherein the one or more mask variables are intensity values of pixels within the initial continuous tone image. 8 . The method of claim 6 , comprising modifying one or more parameters of the binarization function and wherein the one or more parameters of the binarization function comprise a steepness and threshold. 9 . The method of claim 1 , wherein the cost function is minimized. 10 . The method of claim 1 , wherein the cost function is an edge placement error and/or a mask rule check violation probability. 11 . The method of claim 1 , wherein the initial continuous tone image is a continuous transmission mask image comprising features corresponding to the target pattern and sub-resolution assist features. 12 . The method of claim 1 , further comprising manufacturing a patterning device including structural features corresponding to the binarized image. 13 . The method of claim 1 , further comprising performing, by a lithographic apparatus, a patterning step using a patterning device having structural features corresponding to the binarized image to print a corresponding pattern on the substrate. 14 . The method of claim 12 , wherein the structural features correspond to optical proximity corrections including assist features and/or contour modification. 15 . A computer program product comprising a non-transitory computer readable medium having instructions therein, the instructions, when executed by a computer, configured to cause the computer to at least: obtain (i) a target pattern to be printed on a substrate subjected to a patterning process, (ii) an initial continuous tone image corresponding to the target pattern, (iii) a binarization function configured to transform the initial continuous tone image, and (iv) a process model configured to predict a pattern on the substrate from an output of the binarization function; and generate a binarized image having a mask pattern for a patterning device and corresponding to the initial continuous tone image by iterative updating of the initial continuous tone image based on a cost function such that the cost function is reduced, wherein the cost function determines a difference between a predicted pattern determined by the process model and the target pattern. 16 . The computer program product of claim 15 , wherein the binarization function is a sigmoid function, an arctan function, and/or a step function. 17 . The computer program product of claim 15 , wherein an iteration of determination of the curvilinear pattern comprises: generation of a transformed image by applying a binarization function to the initial continuous tone image; prediction, via simulation of the process model, of a pattern from the transformed image; determination of a gradient of the cost function; and modification of a value of one or more mask variables corresponding to the initial continuous tone image and/or one or more parameters of the binarization function based on the gradient of the cost function such that the cost function is reduced. 18 . The computer program product of claim 15 , wherein the cost function is an edge placement error and/or a mask rule check violation probability. 19 . The computer program product of claim 15 , wherein the initial continuous tone image is a continuous transmission mask image comprising features corresponding to the target pattern and sub-resolution assist features. 20 . The computer program product of claim 15 , wherein the instructions are further configured to cause the computer to output information for manufacturing a patterning device including structural features corresponding to the binarized image.
Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title
Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes · CPC title
Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS] · CPC title
Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36) · CPC title
Manufacturability analysis or optimisation for manufacturability · CPC title
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