Method of formulating perovskite solar cell materials

Patent metadata

Field	Value
Publication number	US-2020358436-A1
Application number	US-202016939907-A
Country	US
Kind code	A1
Filing date	Jul 27, 2020
Priority date	Aug 1, 2014
Publication date	Nov 12, 2020
Grant date	—

Abstract

A method for preparing photoactive perovskite materials. The method comprises the step of preparing a germanium halide precursor ink. Preparing a germanium halide precursor ink comprises the steps of: introducing a germanium halide into a vessel, introducing a first solvent to the vessel, and contacting the germanium halide with the first solvent to dissolve the germanium halide. The method further comprises depositing the germanium halide precursor ink onto a substrate, drying the germanium halide precursor ink to form a thin film, annealing the thin film, and rinsing the thin film with a second solvent and a salt.

First claim

What is claimed is:

1 . A method comprising the steps of:
preparing a germanium halide precursor ink, wherein preparing a germanium halide precursor ink comprises the steps of:
introducing a germanium halide into a vessel;
introducing a first solvent to the vessel; and
contacting the germanium halide with the first solvent to dissolve the germanium halide to form the germanium halide precursor ink;
depositing the germanium halide precursor ink onto a substrate; drying the germanium halide precursor ink to form a thin film; annealing the thin film; and rinsing the thin film with a solution comprising:
a second solvent; and
a first salt selected from the group consisting of methylammonium iodide, formamidinium halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide.

2 . The method of claim 1 , wherein the first solvent is selected from the group consisting of dry dimethylformamide, dimethylsulfoxide (DMSO), methanol, ethanol, propanol, butanol, tetrahydrofuran, formamide, pyridine, pyrrolidine, chlorobenzene, dichlorobenzene, dichloromethane, chloroform, and combinations thereof.

3 . The method of claim 1 , wherein contacting the germanium halide with the first solvent to dissolve the germanium halide occurs between about 20° C. to about 150° C.

4 . The method of claim 1 , wherein contacting the germanium halide with the first solvent to dissolve the germanium halide occurs at about 85° C.

5 . The method of claim 1 , wherein annealing the thin film occurs for between about 5 to about 30 minutes at a temperature between about 40° C. to about 60° C.

6 . The method of claim 1 , wherein annealing the thin film occurs for about ten minutes at a temperature of about 50° C.

7 . The method of claim 1 , wherein the second solvent is selected from the group consisting of dimethylformamide, isopropanol, methanol, ethanol, butanol, chloroform, chlorobenzene, dimethylsulfoxide, water, and combinations thereof.

8 . The method of claim 1 , wherein rinsing the thin film with a solution further comprises:
a second salt selected from the group consisting of methylammonium halide, formamidinium halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide.

9 . The method of claim 8 , wherein the first salt comprises formamidinium iodide and the second salt comprises guanidium iodide.

10 . The method of claim 8 , wherein the first salt comprises methylammonium iodide and the second salt comprises guanidium iodide.

11 . A perovskite material prepared by a process comprising the steps of:
preparing a germanium halide precursor ink, wherein preparing a germanium halide precursor ink comprises the steps of:
introducing a germanium halide into a vessel;
introducing a first solvent to the vessel; and
contacting the germanium halide with the first solvent to dissolve the germanium halide;
depositing the germanium halide precursor ink onto a substrate; drying the germanium halide precursor ink to form a thin film; annealing the thin film; and rinsing the thin film, to form the perovskite material, with a solution comprising:
a second solvent; and
a first salt selected from the group consisting of methylammonium iodide, formamidinium halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide.

12 . The perovskite material of claim 11 , wherein the first solvent is selected from the group consisting of dry dimethylformamide, dimethylsulfoxide (DMSO), methanol, ethanol, propanol, butanol, tetrahydrofuran, formamide, pyridine, pyrrolidine, chlorobenzene, dichlorobenzene, dichloromethane, chloroform, and combinations thereof.

13 . The perovskite material of claim 11 , wherein contacting the germanium halide with the first solvent to dissolve the germanium halide occurs between about 20° C. to about 150° C.

14 . The perovskite material of claim 11 , wherein contacting the germanium halide with the first solvent to dissolve the germanium halide occurs at about 85° C.

15 . The perovskite material of claim 11 , wherein annealing the thin film occurs for between about 5 to about 30 minutes at a temperature between about 40° C. to about 60° C.

16 . The perovskite material of claim 11 , wherein annealing the thin film occurs for about ten minutes at a temperature of about 50° C.

17 . The perovskite material of claim 11 , wherein the second solvent is selected from the group consisting of dimethylformamide, isopropanol, methanol, ethanol, butanol, chloroform chlorobenzene, dimethylsulfoxide, water, and combinations thereof.

18 . The perovskite material of claim 11 , wherein the solution further comprises:
a second salt selected from the group consisting of methylammonium halide, formamidinium halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide.

19 . The perovskite material of claim 18 , wherein the first salt comprises formamidinium iodide and the second salt comprises guanidium iodide.

20 . The perovskite material of claim 18 , wherein the first salt comprises methylammonium iodide and the second salt comprises guanidium iodide.

Assignees

• Hunt Energy Entpr Llc

Inventors

• Irwin Michael D
• Chute Jerred A
• Dhas Vivek V

Classifications

• H01G9/2009

  Solid electrolytes · CPC title

• H10K85/50 Primary

  Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title

• H10K30/451

  comprising a metal-semiconductor-metal [m-s-m] structure · CPC title

• H10K71/12 Primary

  using liquid deposition, e.g. spin coating · CPC title

• H10F77/124

  comprising only Group III-V materials, e.g. GaAs · CPC title