Film-forming composition, silicon-containing film, and resist pattern-forming method

Patent metadata

Field	Value
Publication number	US-2020354575-A1
Application number	US-202016942938-A
Country	US
Kind code	A1
Filing date	Jul 30, 2020
Priority date	Feb 5, 2018
Publication date	Nov 12, 2020
Grant date	—

Abstract

A film-forming composition includes a compound including a Si—H bond and an orthoester. The compound preferably includes a structural unit that is a structural unit represented by formula (1-1), a structural unit represented by formula (1-2), or a combination thereof. In the formula (1-1) and the formula (1-2), R 1 and R 2 each represent a hydroxy group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms; and R 3 represents a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms that bonds to two Si atoms.

First claim

What is claimed is:

1 . A film-forming composition, comprising:
a compound comprising a Si—H bond; and an orthoester.

2 . The film-forming composition according to claim 1 , wherein the compound comprises a structural unit that is a structural unit represented by formula (1-1), a structural unit represented by formula (1-2), or a combination thereof,

wherein,
in the formula (1-1), a is an integer of 1 to 3; R 1 represents a hydroxy group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms; and b is an integer of 0 to 2, wherein in a case in which b is 2, two R 1 s are identical or different, and wherein a sum of a and b is no greater than 3, and
in the formula (1-2), c is an integer of 1 to 3; R 2 represents a hydroxy group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms; d is an integer of 0 to 2, wherein in a case in which d is 2, two R 2 s are identical or different; R 3 represents a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms that bonds to two Si atoms; and p is an integer of 1 to 3, wherein in a case in which p is no less than 2, a plurality of R 3 s are identical or different, and wherein a sum of c, d, and p is no greater than 4.

3 . The film-forming composition according to claim 2 , wherein the compound further comprises a structural unit that is a structural unit represented by formula (2-1), a structural unit represented by formula (2-2), or a combination thereof,

wherein, in the formula (2-2), R 4 represents a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms that bonds to two Si atoms; and q is an integer of 1 to 4, wherein in a case in which q is no less than 2, a plurality of R 4 s are identical or different.

4 . The film-forming composition according to claim 2 , wherein the compound further comprises a structural unit that is a structural unit represented by formula (3-1), a structural unit represented by formula (3-2), or a combination thereof,

wherein,
in the formula (3-1), R 5 represents a hydroxy group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms; and e is an integer of 1 to 3, wherein in a case in which e is no less than 2, a plurality of R 5 s are identical or different, and
in the formula (3-2), R 6 represents a hydroxy group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms; f is 1 or 2, wherein in a case in which f is 2, two R 6 s are identical or different; R 7 represents a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms that bonds to two Si atoms; and r is an integer of 1 to 3, wherein in a case in which r is no less than 2, a plurality of R 7 s are identical or different, and wherein a sum of f and r is no greater than 4.

5 . The film-forming composition according to claim 3 , wherein the compound further comprises a structural unit that is a structural unit represented by formula (3-1), a structural unit represented by formula (3-2), or a combination thereof,

wherein,
in the formula (3-1), R 5 represents a hydroxy group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms; and e is an integer of 1 to 3, wherein in a case in which e is no less than 2, a plurality of R 5 s are identical or different, and
in the formula (3-2), R 6 represents a hydroxy group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms; f is 1 or 2, wherein in a case in which f is 2, two R 6 s are identical or different; R 7 represents a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms that bonds to two Si atoms; and r is an integer of 1 to 3, wherein in a case in which r is no less than 2, a plurality of R 7 s are identical or different, and wherein a sum of f and r is no greater than 4.

6 . The film-forming composition according to claim 1 , wherein the orthoester is represented by formula (4),
R 8 —C(OR 9 ) 3   (4)
wherein, in the formula (4), R 8 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; and each R 9 independently represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms.

7 . The film-forming composition according to claim 2 , wherein the orthoester is represented by formula (4),
R 8 —C(OR 9 ) 3   (4)

wherein, in the formula (4), R 8 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; and each R 9 independently represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms.

8 . The film-forming composition according to claim 3 , wherein the orthoester is represented by formula (4),
R 8 —C(OR 9 ) 3   (4)
wherein, in the formula (4), R 8 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; and each R 9 independently represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms.

9 . The film-forming composition according to claim 4 , wherein the orthoester is represented by formula (4),
R 8 —C(OR 9 ) 3   (4)
wherein, in the formula (4), R 8 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; and each R 9 independently represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms.

10 . The film-forming composition according to claim 5 , wherein the orthoester is represented by formula (4),
R 8 —C(OR 9 ) 3   (4)
wherein, in the formula (4), R 8 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; and each R 9 independently represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms.

11 . A silicon-containing film formed from the film-forming composition according to claim 1 .

12 . A resist pattern-forming method comprising:
applying a film-forming composition directly or indirectly on an upper face of a substrate to form a silicon-containing film; applying a resist composition on an upper face of the silicon-containing film to form a resist film; exposing the resist film; and developing the resist film exposed, wherein the film-forming composition comprises:
a compound comprising a Si—H bond; and
an orthoester.

13 . The resist pattern-forming method according to claim 12 , wherein an exposure light used in the exposing is an extreme ultraviolet ray or an electron beam.

14 . The resist pattern-forming method according to claim 12 , further comprising carrying out etching after the developing.

15 . The resist pattern-forming method according to claim 12 , further comprising, before the applying of the film-forming composition, forming an organic underlayer film directly or indirectly on the upper face of the substrate.

16 . The resist pattern-forming method according to claim 12 , wherein the com

Assignees

• Jsr Corp

Inventors

• Seko Tomoaki
• Taji Tomoya
• Satou Nozomi
• Tanaka Hiromitsu
• Sakai Tatsuya

Classifications

• C09D183/14

  in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms (C09D183/10 takes precedence) · CPC title

• C08G77/52

  containing aromatic rings · CPC title

• C08G77/50

  by carbon linkages · CPC title

• G03F7/0752 Primary

  in non photosensitive layers or as additives, e.g. for dry lithography · CPC title

• G03F7/26

  Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) · CPC title