Monolithic solar cell and method of manufacturing the same

US2020343309A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2020343309-A1
Application numberUS-201716320932-A
CountryUS
Kind codeA1
Filing dateNov 27, 2017
Priority dateNov 22, 2017
Publication dateOct 29, 2020
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

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Disclosed are a monolithic solar cell and a method of manufacturing the same. More particularly, the present invention provides a monolithic solar cell including a first solar cell formed by sequentially stacking an electrode, a silicon substrate, and an n-type emitter layer; a junction layer formed on the an n-type emitter layer; an interfacial layer formed on the junction layer; and a second solar cell including a perovskite layer and integrated onto the interfacial layer. The interfacial layer according to the present invention may be pyrolyzed and thus partially or completely lost during a monolithic solar cell manufacturing process. In addition, by providing an interfacial layer between the two cells constituting a monolithic solar cell according to the present invention, charge transfer and recombination characteristics between the two cells can be improved and thus a monolithic solar cell having significantly improved photoelectric conversion efficiency can be provided.

First claim

Opening claim text (preview).

What is claimed is: 1 . A monolithic solar cell, comprising: a first solar cell formed by sequentially stacking an electrode, a silicon substrate, and an n-type emitter layer; a junction layer formed on the an n-type emitter layer; an interfacial layer formed on the junction layer; and a second solar cell comprising a perovskite layer and integrated onto the interfacial layer. 2 . The monolithic solar cell according to claim 1 , wherein the interfacial layer is a single layer constituted of PEDOT:PSS, PTAA, c-OTPD, PCDTBT, or, F4-TCNQ-doped PTAA or a double layer constituted of PEDOT:PSS and poly-TPD or PEDOT:PSS and PCDTBT. 3 . The monolithic solar cell according to claim 1 , wherein the second solar cell has a form wherein a p-type hole selective layer, a perovskite layer, an n-type electron selective layer, a transparent electrode layer, and a metal grid electrode layer are sequentially laminated. 4 . The monolithic solar cell according to claim 3 , wherein the second solar cell further comprises a protective oxide layer that is disposed between the n-type electron selective layer and the transparent electrode layer and composed of any one of zinc oxide, titanium dioxide, zirconium oxide, aluminum-doped zinc oxide, tin oxide, indium oxide, zinc tin oxide, niobium oxide, barium titanate, strontium titanate, and tungsten oxide-titanium dioxide or a mixture of two or more thereof. 5 . The monolithic solar cell according to claim 1 , wherein the perovskite layer is formed of a composite material formed by combining two or more groups selected from the group consisting of a group of carbon compounds comprising a methylammonium ion (CH 3 NH 3 + , MA ion) and a formamidinium ion (HC(NH 2 ) 2 + , FA ion), a group of metals comprising cesium, rubidium, lead, and tin, an iodine group, a chloride group, and a halide group and manufactured by a solution process, a vacuum process, or a combined process. 6 . The monolithic solar cell according to claim 3 , wherein the p-type hole selective layer is formed of any one of NiO x , MoO x , V 2 O 5 , WO 3 , and CuSCN or an oxide doped with at least one of Cu, Li, Mg, and Co. 7 . The monolithic solar cell according to claim 3 , wherein the n-type electron selective layer is formed of any one of PCBM and C 60 or a combination thereof and comprises an organic layer formed of BCP, PFN, LiF, or PEIE. 8 . The monolithic solar cell according to claim 3 , wherein each of the junction layer and the transparent electrode layer is a single layer formed of an oxide of at least one of indium, tin, and zinc, any one of aluminum zinc oxide, boron zinc oxide, and hydrogenated indium oxide, or one material selected from the group consisting of oxide-based nanoparticles, silver nanowires, carbon nanotubes, graphene, and PEDOT, or a composite layer wherein two or more materials of the materials form each layer of a double layer. 9 . The monolithic solar cell according to claim 3 , wherein the metal grid electrode layer is formed of any one metal of silver, gold, aluminum, and nickel or an alloy of two or more thereof. 10 . A method of manufacturing a monolithic solar cell, the method comprising: a step of forming a junction layer, which is a transparent electrode type, on a first solar cell formed by sequentially stacking an electrode, a silicon substrate, and an n-type emitter layer; a step of forming an interfacial layer on the junction layer; and a step of forming a second solar cell comprising a perovskite layer on the interfacial layer. 11 . The method according to claim 10 , wherein, in the step of forming an interfacial layer, a heat treatment process and an ozone treatment process are performed. 12 . The method according to claim 10 , wherein the step of forming an interfacial layer is a step of forming a single interfacial layer, constituted of PEDOT:PSS or PTAA, on the junction layer or a step of forming a double interfacial layer, constituted of PEDOT:PSS and poly-TPD or PEDOT:PSS and PCDTBT, on the junction layer.

Assignees

Inventors

Classifications

  • Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title

  • Photovoltaic [PV] devices · CPC title

  • comprising multiple junctions, e.g. tandem PV cells · CPC title

  • H10F19/40Primary

    comprising photovoltaic cells in a mechanically stacked configuration · CPC title

  • comprising zinc oxide [ZnO] · CPC title

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What does patent US2020343309A1 cover?
Disclosed are a monolithic solar cell and a method of manufacturing the same. More particularly, the present invention provides a monolithic solar cell including a first solar cell formed by sequentially stacking an electrode, a silicon substrate, and an n-type emitter layer; a junction layer formed on the an n-type emitter layer; an interfacial layer formed on the junction layer; and a second …
Who is the assignee on this patent?
Korea Inst Sci & Tech
What technology area does this patent fall under?
Primary CPC classification H10F19/40. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Oct 29 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).