Additive manufacturing based multi-layer fabrication/repair

Patent metadata

Field	Value
Publication number	US-2020331059-A1
Application number	US-201916385177-A
Country	US
Kind code	A1
Filing date	Apr 16, 2019
Priority date	Apr 16, 2019
Publication date	Oct 22, 2020
Grant date	—

Abstract

A method of additively manufacturing includes generating a thermal model driven scan map that identifies an equiaxed cap region, a single crystal (SX) region, and a columnar to equiaxed transition (CET) region; and forming an active melt pool with respect to the thermal model driven scan map such that a depth of the active melt pool is greater than a thickness of the equiaxed transition (CET) region.

First claim

What is claimed:

1 . A method of additively manufacturing, comprising:
generating a thermal model driven scan map; and maintaining an active melt pool of an active melt pool scan pattern with respect to the thermal model driven scan map such that a depth of the active melt pool is greater than a thickness of an equiaxed transition (CET) region.

2 . The method as recited in claim 1 , further comprising initiating formation of the active melt pool in a cast single crystal (SX) baseplate.

3 . The method as recited in claim 1 , further comprising restricting a scan rotation to zero and unidirectional movement of an active melt pool scan pattern to assure columnar single crystal (SX) growth.

4 . The method as recited in claim 1 , further comprising maintaining the active melt pool of the active melt pool scan pattern with a lesser power than a conventional melt pool of a conventional scan pattern.

5 . The method as recited in claim 4 , further comprising arranging the active melt pool scan pattern with a closer line spacing and higher velocity than the conventional scan pattern.

6 . The method as recited in claim 1 , further comprising utilizing the thermal model driven scan map to model residual stress.

7 . The method as recited in claim 1 , further comprising utilizing the thermal model driven scan map to define a morphology.

8 . The method as recited in claim 7 , wherein the morphology is between single crystal (SX) regions, a directionally solidified (DS) and an equiaxed (EQ) microstructure.

9 . The method as recited in claim 1 , wherein the thermal model driven scan map identifies an equiaxed cap region, a single crystal (SX) region, and a columnar to equiaxed transition (CET) region.

10 . A method of additively manufacturing, comprising:
locating a cast single crystal (SX) baseplate in an additively manufacturing machine; initiating formation of an active melt pool in the cast single crystal (SX) baseplate via an active melt pool scan pattern; generating a thermal model driven scan map that identifies an equiaxed cap region, a single crystal (SX) region, and a columnar to equiaxed transition (CET) region; and maintaining the active melt pool with the active melt pool scan pattern in accords with the thermal model driven scan map such that a depth of the active melt pool is greater than a thickness of an equiaxed transition (CET) region.

11 . The method as recited in claim 10 , further comprising maintaining the active melt pool of the active melt pool scan pattern with a lesser power than a conventional melt pool of a conventional scan pattern.

12 . The method as recited in claim 11 , further comprising arranging the active melt pool scan pattern with a closer line spacing and higher velocity than the conventional scan pattern.

13 . The method as recited in claim 10 , further comprising utilizing the thermal model driven scan map to model residual stress.

Assignees

• United Technologies Corp

Inventors

• Acharya Ranadip
• Jagdale Vijay Narayan

Classifications

• B29C64/386 Primary

  Data acquisition or data processing for additive manufacturing · CPC title

• B33Y50/00 Primary

  Data acquisition or data processing for additive manufacturing · CPC title

• B22F10/38

  to achieve specific product aspects, e.g. surface smoothness, density, porosity or hollow structures · CPC title

• B22F10/366

  Scanning parameters, e.g. hatch distance or scanning strategy · CPC title

• B22F10/36

  of energy beam parameters · CPC title