Semiconductor device, display device, electronic device, and operation method

Patent metadata

Field	Value
Publication number	US-2020320930-A1
Application number	US-201816765496-A
Country	US
Kind code	A1
Filing date	Dec 4, 2018
Priority date	Dec 6, 2017
Publication date	Oct 8, 2020
Grant date	—

Abstract

A semiconductor device that reduces variations in the characteristics of driving transistors and corrects image data is provided. The semiconductor device includes an image data retention portion, a correction data retention portion, a driver circuit portion, a display element, and a threshold voltage correction circuit portion. The image data retention portion has a function of retaining first image data, and the correction data retention portion has a function of retaining correction data, and a function of generating second image data corresponding to the first image data and the correction data when the first image data is retained in the image data retention portion. The driver circuit portion has a function of generating a current corresponding to the second image data and feeding the current to the display element, and the threshold voltage correction circuit portion has a function of correcting a threshold voltage of a driving transistor in the driver circuit portion. With the above structure, the semiconductor device can correct the image data, correct the threshold voltage of the driving transistor, and perform display based on the second image data.

First claim

1 . A semiconductor device comprising:
an image data retention portion; a correction data retention portion; a driver circuit portion including a first transistor; a display element electrically connected to the first transistor; and a threshold voltage correction circuit portion, wherein the first transistor includes a gate and a back gate, wherein the image data retention portion has a function of retaining first image data, wherein the correction data retention portion has a function of retaining correction data and a function of generating second image data corresponding to the first image data and the correction data when the first image data is retained in the image data retention portion, wherein the driver circuit portion has a function of generating a first current between a first terminal and a second terminal of the first transistor and feeding the first current to the display element when a first potential corresponding to the second image data is applied to the gate of the first transistor, and wherein the threshold voltage correction circuit portion has a function of correcting a threshold voltage of the first transistor.

2 . The semiconductor device according to claim 1 , further comprising first to third capacitors,
wherein the image data retention portion includes a second transistor, wherein the correction data retention portion includes a third transistor, wherein the threshold voltage correction circuit portion includes a fourth transistor, wherein a first terminal of the second transistor is electrically connected to a first terminal of the first capacitor, wherein a first terminal of the third transistor is electrically connected to the gate of the first transistor, a second terminal of the first capacitor, and a first terminal of the second capacitor, wherein the first terminal of the first transistor is electrically connected to a second terminal of the second capacitor and a first terminal of the third capacitor, and wherein the back gate of the first transistor is electrically connected to a first terminal of the fourth transistor and a second terminal of the third capacitor.

3 . The semiconductor device according to claim 2 ,
wherein each of the first to fourth transistors includes one of a metal oxide in a channel formation region.

4 . The semiconductor device according to claim 2 ,
wherein the driver circuit portion further includes a fifth transistor, and wherein the first terminal of the first transistor is electrically connected to the display element through the fifth transistor.

5 . (canceled)

6 . The semiconductor device according to claim 2 , further comprising a sixth transistor,
wherein a first terminal of the sixth transistor is electrically connected to the gate of the first transistor, and wherein a second terminal of the sixth transistor is electrically connected to the first terminal of the first transistor.

7 .- 9 . (canceled)

10 . An electronic device comprising the semiconductor device according to claim 1 .

11 .- 18 . (canceled)

19 . A semiconductor device comprising:
an image data retention portion including a second transistor; a correction data retention portion including a third transistor; a driver circuit portion including a first transistor; a display element electrically connected to the first transistor; a threshold voltage correction circuit portion including a fourth transistor; and a first capacitor, a second capacitor, and a third capacitor, wherein the first transistor includes a gate and a back gate, wherein one of a source and a drain of the second transistor is electrically connected to a first terminal of the first capacitor, wherein one of a source and a drain of the third transistor is electrically connected to the gate of the first transistor, a second terminal of the first capacitor, and a first terminal of the second capacitor, wherein one of a source and a drain of the first transistor is electrically connected to a second terminal of the second capacitor and a first terminal of the third capacitor, and wherein the back gate of the first transistor is electrically connected to one of a source and a drain of the fourth transistor and a second terminal of the third capacitor.

20 . The semiconductor device according to claim 19 ,
wherein each of the first to fourth transistors includes a metal oxide in a channel formation region.

21 . The semiconductor device according to claim 19 ,
wherein the driver circuit portion further includes a fifth transistor, and wherein the one of the source and the drain of the first transistor is electrically connected to the display element through the fifth transistor.

22 . The semiconductor device according to claim 19 , further comprising a sixth transistor,
wherein one of a source and a drain of the sixth transistor is electrically connected to the gate of the first transistor, and wherein the other of the source and the drain of the sixth transistor is electrically connected to the one of the source and the drain of the first transistor.

23 . An electronic device comprising the semiconductor device according to claim 19 .

24 . A semiconductor device comprising:
a second transistor; a third transistor; a first transistor; a display element electrically connected to the first transistor; a fourth transistor; and a first capacitor, a second capacitor, and a third capacitor, wherein the first transistor includes a gate and a back gate, wherein one of a source and a drain of the second transistor is electrically connected to a first terminal of the first capacitor, wherein one of a source and a drain of the third transistor is electrically connected to the gate of the first transistor, a second terminal of the first capacitor, and a first terminal of the second capacitor, wherein one of a source and a drain of the first transistor is electrically connected to a second terminal of the second capacitor and a first terminal of the third capacitor, and wherein the back gate of the first transistor is electrically connected to one of a source and a drain of the fourth transistor and a second terminal of the third capacitor.

25 . The semiconductor device according to claim 24 ,
wherein each of the first to fourth transistors includes a metal oxide in a channel formation region.

26 . The semiconductor device according to claim 24 , further comprising a fifth transistor,
wherein the one of the source and the drain of the first transistor is electrically connected to the display element through the fifth transistor.

27 . The semiconductor device according to claim 24 , further comprising a sixth transistor,
wherein one of a source and a drain of the sixth transistor is electrically connected to the gate of the first transistor, and wherein the other of the source and the drain of the sixth transistor is electrically connected to the one of the source and the drain of the first transistor.

28 . An electronic device comprising the semiconductor device according to claim 24 .

Assignees

• Semiconductor Energy Lab

Inventors

• Toyotaka Kouhei
• Takahashi Kei
• Kawashima Susumu
• Yamazaki Shunpei

Classifications

• G09G2330/021

  Power management, e.g. power saving · CPC title

• G09G2320/045

  Compensation of drifts in the characteristics of light emitting or modulating elements · CPC title

• G09G2300/0852

  being a dynamic memory with more than one capacitor · CPC title

• G09G2300/043

  Compensation electrodes or other additional electrodes in matrix displays related to distortions or compensation signals, e.g. for modifying TFT threshold voltage in column driver · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title