Catalysts for hydrogen evolution reaction including transition metal chalcogenide films and methods of forming the same

Patent metadata

Field	Value
Publication number	US-2020308719-A1
Application number	US-201716464142-A
Country	US
Kind code	A1
Filing date	Nov 28, 2017
Priority date	Nov 28, 2016
Publication date	Oct 1, 2020
Grant date	—

Abstract

Catalysts for hydrogen evolution reaction (HER) and method of forming the catalysts are provided. The catalysts may include a metal chalcogenide film comprising chalcogen atom vacancies. A density of the chalcogen atom vacancies may be from about 5% to about 15%. The catalysts may further include a substrate on which the metal chalcogenide film extends. The substrate may include nickel, titanium, silver, zinc, and/or platinum. The catalysts may also include hydrogen ions disposed a surface of the metal chalcogenide film. The metal chalcogenide film may be a monolayer film including dopants, and the dopants may be nickel atoms, cobalt atoms, zinc atoms, iron atoms, rhenium (Re) atoms, and/or Niobium (Nb) atoms.

First claim

1 . A catalyst for hydrogen evolution reaction, the catalyst comprising:
a metal chalcogenide film comprising chalcogen atom vacancies, wherein the metal chalcogenide film is a monolayer film or a film comprising less than 10 layers, and wherein a density of the chalcogen atom vacancies is from about 5% to about 15%.

2 . A catalyst for hydrogen evolution reaction, the catalyst comprising:
a substrate comprising nickel, titanium, silver, zinc, and/or platinum; and a metal chalcogenide film extending on the substrate.

3 . A catalyst for hydrogen evolution reaction, the catalyst comprising:
a substrate; a metal chalcogenide film extending on the substrate, wherein the metal chalcogenide film comprises a first surface facing the substrate and a second surface opposite the first surface; and hydrogen ions disposed on the first surface of the metal chalcogenide film or on the second surface of the metal chalcogenide film.

4 . (canceled)

5 . The catalyst of claim 1 , further comprising a substrate, wherein the metal chalcogenide film extends on the substrate.

6 . The catalyst of claim 5 , wherein the substrate comprises nickel, titanium, silver, zinc, and/or platinum.

7 . The catalyst of claim 6 , wherein the substrate comprises a primary substrate and a platinum layer extending between the primary substrate and the metal chalcogenide film.

8 . The catalyst of claim 7 , wherein the platinum layer has a thickness of from about 1 nm to about 10 nm.

9 . The catalyst of claim 7 , wherein the primary substrate comprises nickel or metal.

10 . The catalyst of claim 2 , wherein the metal chalcogenide film comprises chalcogen atom vacancies, and
wherein a density of the chalcogen atom vacancies is from about 5% to about 15%.

11 - 12 . (canceled)

13 . The catalyst of claim 2 , wherein the metal chalcogenide film comprises a first surface facing the substrate and a second surface opposite the first surface, and
wherein the catalyst further comprises hydrogen ions on the first surface of the metal chalcogenide film or on the second surface of the metal chalcogenide film.

14 . The catalyst of claim 3 , wherein the metal chalcogenide film comprises a plurality of metal chalcogenide monolayer films, and
wherein ones of the hydrogen ions are intercalated between adjacent ones of the plurality of metal chalcogenide monolayer films.

15 . The catalyst of claim 2 , wherein the metal chalcogenide film comprises dopants, and
wherein the dopants comprises nickel atoms, cobalt atoms, zinc atoms, iron atoms, rhenium (Re) atoms, and/or Niobium (Nb) atoms.

16 . The catalyst of claim 15 , wherein the metal chalcogenide film is a monolayer film or a film comprising less than 10 layers.

17 . The catalyst of claim 2 , wherein a metal atom of the metal chalcogenide film is Mo, W, Co, Zn, Fe, Re, Nb, and/or Ni.

18 . The catalyst of claim 17 , wherein a chalcogen atom of the metal chalcogenide film is S and/or Se.

19 . The catalyst of claim 3 , wherein the metal chalcogenide film has a thickness of about 10 nm or less.

20 . The catalyst of claim 3 , wherein the metal chalcogenide film has a thickness of about 30 Å or less.

21 . The catalyst of claim 3 , wherein the metal chalcogenide film is a monolayer film or a film comprising less than 10 layers.

22 . The catalyst of claim 1 , wherein the metal chalcogenide film is MoS 2 , WS 2 , MoSe 2 , WSe 2 , NiS, Ni 2 S 3 , NiS 2 , CoS, Co 2 S 3 , CoS 2 , ReS 2 , NbS 2 , or alloy thereof.

23 . The catalyst of claim 2 , wherein the metal chalcogenide film is a polycrystalline film having an average grain size of from about 2 nm to about 2000 nm.

24 - 40 . (canceled)

Assignees

• Univ North Carolina State

Inventors

• Cao Linyou
• Li Guoqing
• Liu Zhuang

Classifications

• C25B11/052

  Electrodes comprising one or more electrocatalytic coatings on a substrate · CPC title

• C25B11/063

  Valve metal, e.g. titanium · CPC title

• C25B11/042

  Electrodes formed of a single material · CPC title

• C25B1/04 Primary

  by electrolysis of water · CPC title

• C25B11/075

  consisting of a single catalytic element or catalytic compound · CPC title