Enhanced burst mode operation of a memory device

US2020286556A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2020286556-A1
Application numberUS-201916295969-A
CountryUS
Kind codeA1
Filing dateMar 7, 2019
Priority dateMar 7, 2019
Publication dateSep 10, 2020
Grant date

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  1. Title

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Abstract

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A controller for a phase change memory forms a dedicated burst write partition in the phase change memory and initializes memory cells of the dedicated burst write partition to a SET state. Programming of selected memory cells in the dedicated burst write partition is carried out using only RESET pulses.

First claim

Opening claim text (preview).

1 . A memory device comprising a memory controller configured to: prepare a dedicated burst write partition within a non-volatile memory; execute a background operation to condition memory cells of the dedicated burst write partition by setting the memory cells to a SET state; and apply only state change pulses for a RESET state to program the dedicated burst write partition with data of a burst write operation. 2 . The memory device of claim 1 , wherein the non-volatile memory is a phase change memory. 3 . (canceled) 4 . The memory device of claim 1 , the controller further configured to identify a subset of memory cells of the dedicated burst write partition based on the data of the burst write operation. 5 . The memory device of claim 4 , the controller further configured to execute a foreground operation to program the dedicated burst write partition with the data of the burst write operation. 6 . (canceled) 7 . The memory device of claim 1 , the controller to set a size of the dedicated burst write partition based on burst write operation activity to the memory device. 8 . A memory device comprising: a non-volatile memory; and a controller configured to: prepare a dedicated burst write partition in the non-volatile memory; initialize all operational memory cells of the dedicated burst write partition to a SET state during a background operation; and direct burst write operations to the dedicated burst write partition using only RESET pulses. 9 - 10 . (canceled) 11 . The memory device of claim 8 , the controller configured to apply the RESET pulses to a selected subset of memory cells of the dedicated burst write partition. 12 . The memory device of claim 8 , the controller configured to execute a foreground operation to direct the burst write operations to the dedicated burst write partition. 13 . The memory device of claim 8 , the controller configured to set a size of the dedicated burst write partition based on expected burst write operation activity for the memory device and a latency of the background operation. 14 . A method comprising: preparing a dedicated burst write partition in a phase change memory with a background operation of a memory device controller using only SET pulses; and programming a burst write operation to the dedicated burst write partition using only RESET pulses. 15 . The method of claim 14 , wherein the RESET pulses are applied to an identified subset of memory cells of the dedicated burst write partition. 16 . (canceled) 17 . The method of claim 14 , further comprising: analyzing the burst write operation to identify a subset of memory cells of the dedicated burst write partition to which to apply the RESET pulses. 18 . The method of claim 14 , further comprising: setting a size of the dedicated burst write partition based on burst write operation activity of a memory device. 19 . The method of claim 14 , further comprising: setting a size of the dedicated burst write partition based on a latency requirement for the background operation. 20 . The method of claim 14 , further comprising: setting a size of the dedicated burst write partition based on a burst write latency requirement for a memory device.

Assignees

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Classifications

  • comprising amorphous/crystalline phase transition cells · CPC title

  • Writing or programming circuits or methods · CPC title

  • Improving or facilitating administration, e.g. storage management · CPC title

  • Timing circuits or methods · CPC title

  • Management of space entities, e.g. partitions, extents, pools · CPC title

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What does patent US2020286556A1 cover?
A controller for a phase change memory forms a dedicated burst write partition in the phase change memory and initializes memory cells of the dedicated burst write partition to a SET state. Programming of selected memory cells in the dedicated burst write partition is carried out using only RESET pulses.
Who is the assignee on this patent?
Western Digital Tech Inc
What technology area does this patent fall under?
Primary CPC classification G11C13/0004. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Sep 10 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).