Suspended microelectromechanical system (mems) devices

Patent metadata

Field	Value
Publication number	US-2020283291-A1
Application number	US-201916296603-A
Country	US
Kind code	A1
Filing date	Mar 8, 2019
Priority date	Mar 8, 2019
Publication date	Sep 10, 2020
Grant date	—

Abstract

A microelectromechanical system (MEMS) device is provided that includes a substrate having a dielectric cavity formed therein and a movable electromechanical device suspended in the dielectric cavity. The dielectric cavity includes a substantially planar bottom surface and at least one sidewall surface extending substantially perpendicularly from the bottom surface. The movable electromechanical device is suspended in the dielectric cavity such that the movable electromechanical device is spaced apart from the bottom surface and the at least one sidewall surface of the dielectric cavity. The bottom surface of the cavity and each of the at least one sidewall surface of the cavity meet at a rectilinear corner.

First claim

What is claimed is:

1 .- 4 . (canceled)

5 . The MEMS device according to claim 8 , wherein the dielectric material covering the bottom surface and the at least one sidewall surface of the cavity is silicon oxide.

6 . The MEMS device according to claim 8 , wherein the electromechanical device is a resonator.

7 . The MEMS device according to claim 6 , wherein the resonator includes a polysilicon layer formed of a plurality of polysilicon sublayers having different doping levels.

8 . A microelectromechanical system (MEMS) device comprising:
a substrate having a cavity formed therein, the cavity including a bottom surface, at least one sidewall surface extending substantially perpendicularly from the bottom surface, and an open top; a dielectric material covering each of the bottom surface and the at least one sidewall surface of the cavity; and a movable electromechanical device suspended in the cavity above the bottom surface through the open top, the electromechanical device including a bottom portion and side portions facing the dielectric material of the bottom surface and the dielectric material of each of the at least one sidewall surface, respectively, wherein the bottom surface of the cavity is substantially planar, each of the at least one sidewall surface of the cavity has a substantially linear cross-sectional profile, and the bottom surface of the cavity and the each sidewall surface of the cavity meet at a rectilinear corner, and wherein the bottom portion and the side portions of the electromechanical device are formed of a dielectric material.

9 . The MEMS device according to claim 8 , wherein the dielectric material covering the bottom portion and the side portions of the resonator is silicon oxide.

10 . A microelectromechanical system (MEMS) device comprising:
a substrate having a cavity formed therein, the cavity including a bottom surface, at least one sidewall surface extending substantially perpendicularly from the bottom surface, and an open top; a dielectric material covering each of the bottom surface and the at least one sidewall surface of the cavity; and a movable electromechanical device suspended in the cavity above the bottom surface through the open top, the electromechanical device including a bottom portion and side portions facing the dielectric material of the bottom surface and the dielectric material of each of the at least one sidewall surface, respectively, wherein the bottom surface of the cavity is substantially planar, each of the at least one sidewall surface of the cavity has a substantially linear cross-sectional profile, and the bottom surface of the cavity and the each sidewall surface of the cavity meet at a rectilinear corner, and wherein the bottom portion of the electromechanical device includes a plurality of projections extending toward the bottom surface of the cavity such that the bottom portion of the electromechanical device has a non-linear cross-sectional profile.

11 . The MEMS device according to claim 8 , wherein the electromechanical device is completely surrounded on side and bottom surfaces thereof by the dielectric material covering each of the bottom surface and the at least one sidewall surface of the cavity.

12 . A microelectromechanical system (MEMS) device comprising:
a substrate having a cavity formed therein, the cavity including a bottom surface, at least one sidewall surface extending substantially perpendicularly from the bottom surface, and an open top; a dielectric material covering each of the bottom surface and the at least one sidewall surface of the cavity; and a movable electromechanical device suspended in the cavity above the bottom surface through the open top, the electromechanical device including a bottom portion and side portions facing the dielectric material of the bottom surface and the dielectric material of each of the at least one sidewall surface, respectively, wherein the bottom surface of the cavity is substantially planar, each of the at least one sidewall surface of the cavity has a substantially linear cross-sectional profile, and the bottom surface of the cavity and the each sidewall surface of the cavity meet at a rectilinear corner, and wherein:
the substrate includes:
a first SOI structure having a first active layer, and
a second SOI structure having a second active layer,

the electromechanical device is formed using the second active layer, and
the cavity is formed from a portion of the first active layer.

13 . The MEMS device according to claim 12 , wherein the second active layer includes a plurality of sublayers of different doping levels.

14 . The MEMS device according to claim 12 , wherein the second active layer is formed of a plurality of polysilicon layers of different doping levels.

15 .- 21 . (canceled)

22 . A microelectromechanical system (MEMS) device comprising:
a substrate having a dielectric cavity formed therein, the cavity including a bottom surface, at least one sidewall surface extending substantially perpendicularly from the bottom surface, and an open top; and a movable electromechanical device suspended in the cavity above the bottom surface through the open top, the electromechanical device including a bottom portion and side portions facing the dielectric material of the bottom surface and the dielectric material of each of the at least one sidewall surface, respectively, wherein the bottom surface of the cavity is substantially planar, each of the at least one sidewall surface of the cavity has a substantially linear cross-sectional profile, and the bottom surface of the cavity and the each sidewall surface of the cavity meet at a rectilinear corner, and wherein:
the substrate includes:
a first SOI structure having a first active layer, and
a second SOI structure having a second active layer,

the electromechanical device is formed using the second active layer, and
the cavity is formed from a portion of the first active layer.

23 . The MEMS device according to claim 22 , wherein the second active layer includes a plurality of sublayers of different doping levels.

24 . The MEMS device according to claim 22 , wherein the second active layer is formed of a plurality of polysilicon layers of different doping levels.

25 . The MEMS device according to claim 22 , wherein the dielectric cavity is comprised of a layer of silicon oxide covering the bottom surface and the at least one sidewall surface.

26 . The MEMS device according to claim 22 , wherein the electromechanical device is a resonator.

27 . The MEMS device according to claim 8 , wherein the bottom portion of the electromechanical device includes a plurality of projections extending toward the bottom surface of the cavity such that the bottom portion of the electromechanical device has a non-linear cross-sectional profile.

28 . The MEMS device according to claim 12 , wherein the bottom portion of the electromechanical device includes a plurality of projections extending toward the bottom surface of the cavity such that the bottom portion of the electromechanical device has a non-linear cross-sectional profile.

29 . The MEMS device according to claim 12 , wherein a trench surrounds at least a portion of the electromechanical device, the trench including at least one dielectric trench wall facing a dielectric side surface of the electromechanical device.

30 . The MEMS device according to claim 22 , wherein the bottom portion of the electromechani

Assignees

• Analog Devices International Unlimited Co

Inventors

• Krishna Kotlanka Rama
• Flynn Michael John
• Khine Lynn
• Whiston Seamus Paul
• Lambkin Paul

Classifications

• B81C1/0015

  Cantilevers (switches using MEMS H01H1/0036; electrostatic relays using micromechanics H01H59/0009; microelectro-mechanical resonators H03H9/02244) · CPC title

• B81B3/0081

  Thermal properties · CPC title

• B81B2203/0315

  Cavities · CPC title

• B81B2201/0271

  Resonators; ultrasonic resonators · CPC title

• H03H2009/02464

  Pull-in · CPC title