Light Emitting Diode Epitaxial Structure and Light Emitting Diode
US-2024297271-A1 · Sep 5, 2024 · US
US2020274025A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2020274025-A1 |
| Application number | US-201716063336-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 7, 2017 |
| Priority date | Apr 12, 2017 |
| Publication date | Aug 27, 2020 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
The present disclosure relates to the field of LED display technologies, and provides an LED chip, an LED light emitting substrate, a display device and a control method thereof. Specifically, the LED chip comprises: an N-type semiconductor layer, a P-type semiconductor layer, as well as a quantum well layer between the N-type semiconductor layer and the P-type semiconductor layer. The quantum well layer is made of indium gallium nitride, wherein indium atoms have a molar ratio of greater than or equal to 0.3 in the indium gallium nitride.
Opening claim text (preview).
1 . An LED chip, comprising: an N-type semiconductor layer, a quantum well layer and a P-type semiconductor layer, wherein the quantum well layer is located between the N-type semiconductor layer and the P-type semiconductor layer, and the quantum well layer is made of indium gallium nitride, wherein indium atoms have a molar ratio of greater than or equal to 0.3 in the indium gallium nitride. 2 . The LED chip according to claim 1 , wherein the indium atoms have a molar ratio of 0.4 in the indium gallium nitride. 3 . The LED chip according to claim 1 , further comprising: a substrate layer provided with a buffer layer, wherein the N-type semiconductor layer, the quantum well layer and the P-type semiconductor layer are arranged on the buffer layer as a whole. 4 . An LED light emitting substrate, comprising: a plurality of LED chips according to claim 1 ; and a circuit board, wherein the LED chips are arranged on the circuit board, and the circuit board comprises a base substrate and a drive circuit arranged on the base substrate for driving the LED chips. 5 . The LED light emitting substrate according to claim 4 , wherein the circuit board comprises a CMOS substrate or a TFT substrate. 6 . A display device, comprising: the LED light emitting substrate according to claim 4 , and an array of pixel units, each pixel unit comprising a plurality of sub-pixel units, wherein each LED chip of the LED light emitting substrate is located within a sub-pixel unit, and the drive circuit of the LED light emitting substrate is configured to transfer current to each LED chip such that the LED chip emits light of a corresponding wavelength. 7 . The display device according to claim 6 , wherein each pixel unit at least comprises a blue sub-pixel unit, and a blue filter layer is further arranged on a light exit side of the LED chip corresponding to each blue sub-pixel unit. 8 . The display device according to claim 7 , wherein each pixel unit further comprises a red sub-pixel unit and a green sub-pixel unit, and a red filter layer is further arranged on a light exit side of the LED chip corresponding to each red sub-pixel unit, and a green filter layer is further arranged on a light exit side of the LED chip corresponding to each green sub-pixel unit. 9 . The display device according to claim 7 , further comprises: a lower polarizing unit, a liquid crystal layer and an upper polarizing unit arranged sequentially in a light exit direction of the LED light emitting substrate, wherein a transmission axis direction of the lower polarizing unit is perpendicular to or in parallel with a transmission axis direction of the upper polarizing unit. 10 . The display device according to claim 9 , wherein at least one of the lower polarizing unit and the upper polarizing unit comprises a metal wire grating. 11 . The display device according to claim 10 , wherein the lower polarizing unit comprises a metal wire grating, and the metal wire grating is arranged on a light exit side of each LED chip. 12 . A method for controlling a display device to achieve color display, wherein the display device comprises: the LED light emitting substrate according to claims 4 , and an array of pixel units, each pixel unit comprising a blue sub-pixel unit, a green sub-pixel unit and a red sub-pixel unit, wherein each LED chip of the LED light emitting substrate is located within a corresponding sub-pixel unit, wherein the drive circuit of the LED light emitting substrate is configured to transfer current to each LED chip such that the LED chip emits light of a corresponding wavelength, and the method comprising: inputting a first current into the LED chip disposed within the red sub-pixel unit; inputting a second current into the LED chip disposed within the green sub-pixel unit; inputting a third current into the LED chip disposed within the blue sub-pixel unit; wherein a current value of the third current is larger than a current value of the first current, but smaller than a current value of the second current. 13 . The method according to claim 12 , wherein the current value of the first current is 0.1 mA, the current value of the second current is 60 mA, and the current value of the third current is 8 mA. 14 . The method according to claim 13 , wherein a ratio of duty cycles of the first current, the second current and the third current is 120:1:4. 15 . The method according to claim 12 , wherein the display device further comprises a blue filter layer, a red filter layer and a green filter layer arranged respectively on light exit sides of the LED chips corresponding to each blue sub-pixel unit, each green sub-pixel unit and each red sub-pixel unit. 16 . The method according to claim 12 , wherein the current value of the first current falls in a range of smaller than 0.1 mA the current value of the second current falls in a range of 25 mA-100 mA; and the current value of the third current falls in a range of greater than 0.5 mA. 17 . The method according to claim 12 , wherein a duty cycle of the third current is larger than a duty cycle of the second current, but smaller than a duty cycle of the first current. 18 . An LED light emitting substrate, comprising: a plurality of LED chips according to claim 2 ; and a circuit board, wherein the LED chips are arranged on the circuit board, and the circuit board comprises a base substrate and a drive circuit arranged on the base substrate for driving the LED chips. 19 . An LED light emitting substrate, comprising: a plurality of LED chips according to claim 3 ; and a circuit board, wherein the LED chips are arranged on the circuit board, and the circuit board comprises a base substrate and a drive circuit arranged on the base substrate for driving the LED chips. 20 . A display device, comprising: the LED light emitting substrate according to claim 5 , and an array of pixel units, each pixel unit comprising a plurality of sub-pixel units, wherein each LED chip of the LED light emitting substrate is located within a sub-pixel unit, and the drive circuit of the LED light emitting substrate is configured to transfer current to each LED chip such that the LED chip emits light of a corresponding wavelength.
Package configurations · CPC title
Optical field-shaping means, e.g. lenses · CPC title
Wavelength conversion means · CPC title
containing nitrogen, e.g. GaN · CPC title
within the light-emitting regions, e.g. having quantum confinement structures · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.