Skyrmion stack memory device

Patent metadata

Field	Value
Publication number	US-2020259074-A1
Application number	US-201916273777-A
Country	US
Kind code	A1
Filing date	Feb 12, 2019
Priority date	Feb 12, 2019
Publication date	Aug 13, 2020
Grant date	—

Abstract

A memory device includes a memory stack formed on a substrate to program skyrmions within at least one layer of the stack. The skyrmions represent logic states of the memory device. The memory stack further includes a top and bottom electrode to receive electrical current from an external source and to provide the electrical current to the memory stack. A free layer stores a logic state of the skyrmions in response to the electrical current. A Dzyaloshinskii-Moriya (DM) Interaction (DMI) layer in contact with the free layer induces skyrmions in the free layer. A tunnel barrier is interactive with the DMI layer to facilitate detection of the logic state of the skyrmions in response to a read current. At least one fixed magnetic (FM) layer is positioned within the memory stack to facilitate programming of the skyrmions within the free layer in response to the electrical current.

First claim

1 . A memory device, comprising:
a memory stack formed on a substrate to program skyrmions within at least one layer of the memory stack, wherein the skyrmions represent logic states of the memory device, the memory stack further comprising: a top and bottom electrode to receive electrical current from an external source and to provide the electrical current to the memory stack; a free layer to store a logic state of the skyrmions in response to the electrical current; a Dzyaloshinskii Moriya Interaction (DMI) layer in contact with the free layer to induce a skyrmion in the free layer; a tunnel barrier interactive with the DMI layer to facilitate detection of the logic state of the skyrmions in response to a read current; at least one non-magnetic layer in contact with the DMI layer; and at least one fixed magnetic (FM) layer positioned within the memory stack, the at least one fixed FM layer with the at least one non-magnetic layer being configured to facilitate programming and reading of the skyrmions within the free layer in response to the electrical current.

2 . The memory device of claim 1 ,
wherein the skyrmions are created in the free layer based on a first voltage at the top and bottom electrodes, the first voltage at the top and bottom electrodes causing the electrical current to flow in first direction to create a first logic state, and wherein the skyrmions are annihilated in the free layer based on a second voltage at the top and bottom electrodes, the second voltage at the top and bottom electrodes causing the electrical current to flow in a second direction opposite the first direction in the memory stack to create a second logic state.

3 . The memory device of claim 1 , wherein the skyrmions are polarized in a first direction in response to the the electrical current flowing in a first direction representing a first logic state and are polarized in a second direction in response to the electrical current flowing in a second direction that is opposite of the first direction representing a second logic state.

4 . The memory device of claim 1 ,
wherein skyrmions of a positive topological charge +Q are created in the free layer based on a first voltage at the top and bottom electrodes, the first voltage at the top and bottom electrodes causing the electrical current to flow in a first direction, and wherein the skyrmions of negative topological charge −Q are created in the free layer based on a second voltage at the top and bottom electrodes, the second voltage at the top and bottom electrodes causing the electrical current to flow in a second direction opposite the first direction in the memory stack.

5 . The memory device of claim 1 , further comprising a dielectric layer that is formed on a substrate layer, the memory stack formed on the dielectric layer, wherein the dielectric layer is silicon dioxide (SiO 2 ), and the substrate is silicon.

6 . The memory device of claim 1 , wherein the DMI layer includes layer side-edges that extend beyond a perimeter defined by memory stack side-edges of the memory stack, the layer side-edges coupled to electrodes to facilitate programming and detection of the skyrmions in the free layer.

7 . The memory device of claim 1 , wherein the memory stack is formed as a top-pinned configuration that forms the at least one FM layer above the tunnel barrier and above the free layer which is formed above the DMI layer with respect to a base substrate layer.

8 . The memory device of claim 1 , wherein the memory stack is formed as a bottom-pinned configuration that forms the at least one FM layer below the tunnel barrier and below the free layer which is formed below the DMI layer with respect to a base substrate layer.

9 . The memory device of claim 1 , wherein the free layer includes a magnetic alloy of at least one of Ni, Fe, or Co alloy, a CoFeB alloy, a FeB alloy, a Co/Ni multilayer configuration, and a CoFeGd alloy, wherein Co is Cobalt, Fe is Iron, B is Boron, Ni is nickel, and Gd is Gadolinium.

10 . The memory device of claim 1 , wherein the DMI layer includes at least one of Ta, W, Pt, Hf, Ir, Au, and AuPt alloy, wherein Ta is Tantalum, Pt is Platinum, Hf is Hafnium, Ir is Iridium, and Au is Gold.

11 . The memory device of claim 1 , wherein the at least one FM layer includes at least one of Ni, Fe, or Co, or at least one of CoFe, CoFeB layers, synthetic anti-ferromagnetic layers that include Ru spacer layers and antiferromagnetic pinning layers that include PtMn, IrMn, or FeMn, wherein Co is Cobalt, Fe is Iron, B is Boron, Pt is Platinum, Ir is Iridium, and Mn is Manganese.

12 . The memory device of claim 1 , wherein the tunnel barrier is at least one of MgO and Al 2 O 3 , wherein Mg is Magnesium, O is Oxygen, and Al is Aluminum.

13 . A memory device, comprising:
a memory stack formed on a substrate to program skyrmions within at least one layer of the memory stack, wherein the skyrmions represent logic states of the memory device, the memory stack further comprising: top and bottom electrodes to receive electrical current from an external source and to provide the electrical current to the memory stack; a free layer to store a logic state of the skyrmions in response to the electrical current; a Dzyaloshinskii-Moriya (DM) Interaction (DMI) layer in contact with the free layer to induce the skyrmions in the free layer; a tunnel barrier interactive with the free layer to facilitate storage and retrieval of the skyrmions in the free layer, wherein skyrmions of a positive topological charge +Q are created in the free layer based on a first voltage at the top and bottom electrodes, the first voltage at the top and bottom electrodes causing the electrical current to flow in a first direction, and the skyrmions of negative topological charge −Q are created in the free layer based on a second voltage at the top and bottom electrodes to cause the electrical current to flow in a second direction opposite the first direction in the memory stack; at least one non-magnetic layer in contact with the DMI layer; and at least one fixed magnetic (FM) layer positioned within the memory stack, the at least one fixed FM layer with the at least one non-magnetic layer being configured to facilitate creation or annihilation of the skyrmions within the free layer in response to the electrical current.

14 . (canceled)

15 . The memory device of claim 13 , wherein the skyrmions are polarized in a first polarization direction in response to the electrical current flowing in the first direction representing a first logic state and are polarized in a second polarization direction in response to the electrical current flowing in the second direction opposite the first direction representing a second logic state.

16 . The memory device of claim 13 , wherein the DMI layer includes layer side-edges that extend beyond a perimeter defined by memory stack side-edges of the memory stack, the layer side-edges being coupled to electrodes to facilitate writing and reading of the skyrmions in the free layer.

17 . The memory device of claim 13 , wherein the memory stack is formed as a top-pinned configuration that forms the at least one FM layer above the tunnel barrier and above the free layer which is formed above the DMI layer with respect to a base substrate layer.

18 . The memory device of claim 13 , wherein the memory stack is formed as a bottom-pinned configuration that forms the at least one FM layer below the tunnel barrier and below the free layer which is formed below the DMI layer with respect to a base substra

Assignees

• Fitelson Michael M
• Ambrose Thomas F
• Rizzo Nicholas D
• Northrop Grumman Systems Corp

Inventors

• Fitelson Michael M
• Ambrose Thomas F
• Rizzo Nicholas D

Classifications

• H10N50/85

  Materials of the active region · CPC title

• H10N52/00

  Hall-effect devices (integrated devices or assemblies of multiple devices H10N59/00) · CPC title

• H10N50/80

  Constructional details · CPC title

• H10N50/10 Primary

  Magnetoresistive devices · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title