Semiconductor device

US2020258877A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2020258877-A1
Application numberUS-202016858934-A
CountryUS
Kind codeA1
Filing dateApr 27, 2020
Priority dateMar 17, 2000
Publication dateAug 13, 2020
Grant date

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  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A multilayer semiconductor device includes first wirings extending in a first direction and arranged adjacent to each other in a second direction. Dummy wirings are arranged between the first wirings and the second wiring at crossing points between first virtual linear lines extending in a third direction and second virtual linear lines extending in a fourth direction. The third and fourth directions are neither parallel nor orthogonal to the first and second directions. The dummy wirings have a first, a second, and a third dummy wiring. Centers of the second and third dummy wirings are nearest to a center of the first dummy wiring relative to others of the dummy wirings. The respective centers of the first, second, and third dummy wirings are aligned on a third virtual linear line extending in a fifth direction neither parallel to nor perpendicular to the first and second directions.

First claim

Opening claim text (preview).

What is claimed is: 1 . A semiconductor device comprising: a first wiring layer defining a first direction and first virtual linear lines extending in a direction that traverses the first direction; and a plurality of dummy wiring layers provided in an identical level as the first wiring layer, wherein the first direction and the first virtual linear lines define an angle of 2 to 40 degrees, and the plurality of dummy wiring layers are disposed on the first virtual linear lines.

Assignees

Inventors

Classifications

  • by smoothing the dielectric parts · CPC title

  • using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning · CPC title

  • by filling conductive material into holes, grooves or trenches · CPC title

  • H10W20/43Primary

    Layouts of interconnections · CPC title

  • Vias, e.g. via plugs · CPC title

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Frequently asked questions

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What does patent US2020258877A1 cover?
A multilayer semiconductor device includes first wirings extending in a first direction and arranged adjacent to each other in a second direction. Dummy wirings are arranged between the first wirings and the second wiring at crossing points between first virtual linear lines extending in a third direction and second virtual linear lines extending in a fourth direction. The third and fourth dire…
Who is the assignee on this patent?
Seiko Epson Corp
What technology area does this patent fall under?
Primary CPC classification H10W20/43. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Aug 13 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).