Heterofullerene and n-type semiconductor film using same, and electronic device

Patent metadata

Field	Value
Publication number	US-2020239313-A1
Application number	US-201816635011-A
Country	US
Kind code	A1
Filing date	Aug 7, 2018
Priority date	Aug 31, 2017
Publication date	Jul 30, 2020
Grant date	—

Abstract

Provided is a heterofullerene where n number (where n is a positive even number) of carbon atoms constituting a fullerene are substituted by n number of boron atoms or n number of nitrogen atoms.

First claim

1 . A heterofullerene comprising a fullerene C 60 , wherein the fullerene C 60 includes n boron atoms substituted for n carbon atoms in the fullerene C 60 , where n is any of 6, 8, 10, and 12,
wherein when n is 6, a set of substitution positions of six boron atoms is one of: a set of 1st, 3rd, 7th, 13th, 50th, and 60th positions; a set of 1st, 7th, 41st, 50th, 57th, and 60th positions; a set of 1st, 7th, 28th, 31st, 50th, and 60th positions; and a set of 1st, 7th, 21st, 38th, 50th, and 60th positions, when n is 8, a set of substitution positions of eight boron atoms is one of: a set of 1st, 3rd, 7th, 13th, 41st, 50th, 57th, and 60th positions; and a set of 1st, 7th, 21st, 28th, 31st, 38th, 50th, and 60th positions, when n is 10, a set of substitution positions of ten boron atoms is one of 1st, 3rd, 7th, 13th, 21st, 38th, 41st, 50th, 57th, and 60th positions; a set of 1st, 3rd, 7th, 13th, 28th, 31st, 41st, 50th, 57th, and 60th positions; a set of 1st, 3rd, 7th, 13th, 21st, 28th, 31st, 38th, 50th, and 60th positions; and a set of 1st, 7th, 21st, 28th, 31st, 38th, 41st, 50th, 57th, and 60th positions, and when n is 12, a set of substitution positions of twelve boron atoms is a set of 1st, 3rd, 7th, 13th, 21st, 28th, 31st, 38th, 41st, 50th, 57th, and 60th positions.

2 . (canceled)

3 . A heterofullerene comprising a fullerene C 70 ,
wherein the fullerene C 70 includes n boron atoms substituted for n carbon atoms in the fullerene C 70 , where n is 2 or 4, wherein when n is 2, substitution positions of two boron atoms are 1st and 70th positions, and when n is 4, substitution positions of four boron atoms are 1st, 4th, 60th, and 70th positions.

4 . (canceled)

5 . An n-type semiconductor film comprising the heterofullerene according to claim 1 .

6 . An electronic device comprising, as an n-type semiconductor, the heterofullerene according to claim 1 .

7 . An electronic device that is a transistor, the transistor including a source electrode, a drain electrode, a gate electrode, and an n-type semiconductor film, wherein the n-type semiconductor film includes the heterofullerene according to claim 1 .

8 . An n-type semiconductor film comprising a heterofullerene,
wherein when the heterofullerene is a heterofullerene where two carbon atoms constituting a fullerene C 60 are substituted by two boron atoms, substitution positions of the two boron atoms are any of 1st and 16th positions; 1st and 50th positions; 1st and 60th positions; 1st and 57th positions; and 1st and 31st positions, when the heterofullerene is a heterofullerene where four carbon atoms constituting a fullerene C 60 are substituted by four boron atoms, substitution positions of the four boron atoms are 1st, 7th, 50th, and 60th positions, and when the heterofullerene is a heterofullerene where two carbon atoms constituting a fullerene C 60 are substituted by two nitrogen atoms, substitution positions of the two nitrogen atoms are 1st and 60th positions or 1st and 7th positions.

9 . An electric device comprising a heterofullerene as an n-type semiconductor, wherein
when the heterofullerene is a heterofullerene where two carbon atoms constituting a fullerene C 60 are substituted by two boron atoms, substitution positions of the two boron atoms are any of: 1st and 16th positions; 1st and 50th positions; 1st and 60th positions; 1st and 57th positions; and 1st and 31st positions, when the heterofullerene is a heterofullerene where four carbon atoms constituting a fullerene C 60 are substituted by four boron atoms, substitution positions of the four boron atoms are 1st, 7th, 50th, and 60th positions, and when the heterofullerene is a heterofullerene where two carbon atoms constituting a fullerene C 60 are substituted by two nitrogen atoms, substitution positions of the two nitrogen atoms are 1st and 60th positions or 1st and 7th positions.

10 . An electronic device comprising:
a source electrode; a drain electrode; a gate electrode; and an n-type semiconductor film, wherein the n-type semiconductor film includes a heterofullerene, when the heterofullerene is a heterofullerene where two carbon atoms constituting a fullerene C 60 are substituted by two boron atoms, substitution positions of the two boron atoms are any of: 1st and 16th positions; 1st and 50th positions; 1st and 60th positions; 1st and 57th positions; and 1st and 31st positions, when the heterofullerene is a heterofullerene where four carbon atoms constituting a fullerene C 60 are substituted by four boron atoms, substitution positions of the four boron atoms are 1st, 7th, 50th, and 60th positions, and when the heterofullerene is a heterofullerene where two carbon atoms constituting a fullerene C 60 are substituted by two nitrogen atoms, substitution positions of the two nitrogen atoms are 1st and 60th positions or 1st and 7th positions.

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Matsuzawa Nobuyuki
• Sasago Masaru
• Naka Jun'Ichi

Classifications

• H10D30/67

  Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} · CPC title

• C01P2002/52

  containing elements as dopants · CPC title

• C01B32/152

  Fullerenes · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title