Light Emitting Diode Epitaxial Structure and Light Emitting Diode
US-2024297271-A1 · Sep 5, 2024 · US
Semiconducting devices containing quantum wells
US2020235262A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2020235262-A1 |
| Application number | US-202016734994-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 6, 2020 |
| Priority date | Jan 18, 2019 |
| Publication date | Jul 23, 2020 |
| Grant date | — |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
The present disclosure relates to a device that includes, in order, an emitter layer, a quantum well, and a base layer, where the emitter layer has a first bandgap, the base layer has a second bandgap, and the first bandgap is different than the second bandgap by an absolute difference greater than or equal to 25 meV.
First claim
Opening claim text (preview).
What is claimed is: 1 . A device comprising, in order: an emitter layer; a quantum well; and a base layer, wherein: the emitter layer has a first bandgap, the base layer has a second bandgap, and the first bandgap is different than the second bandgap by an absolute difference greater than or equal to 25 meV. 2 . The device of claim 1 , wherein the absolute difference is between about 25 meV and about 100 meV. 3 . The device of claim 2 , wherein the absolute difference is between about 25 meV and about 50 meV. 4 . The device of claim 1 , wherein the quantum well comprises a well layer positioned between a first barrier layer and a second barrier layer. 5 . The device of claim 1 , wherein the emitter layer comprises silicon-doped GaAs. 6 . The device of claim 1 , wherein the base layer comprises zinc-doped GaInP. 7 . The device of claim 4 , wherein the well layer comprises undoped GalnAs. 9 . The device of claim 4 , wherein the first barrier layer and the second barrier layer each comprises undoped GaAsP. 10 . The device of claim 1 , wherein the first bandgap is between about 1.0 eV and about 1.5 eV. 11 . The device of claim 10 , wherein the first bandgap is about 1.4 eV. 12 . The device of claim 1 , wherein the second bandgap is between about 1.0 eV and about 2.2 eV. 13 . The device of claim 12 , wherein the second bandgap is about 1.8 eV. 14 . The device of claim 1 , wherein the emitter layer has a thickness between about 0.5 μm and about 2 μm. 15 . The device of claim 1 , wherein the base layer has a thickness between about 0.05 μm and about 0.2 μm. 16 . The device of claim 1 , wherein the device comprises at least one of a solar cell, a transistor, a light-emitting diode, a laser, or a sensor.
Assignees
Inventors
Classifications
further characterised by the dopants · CPC title
characterised by the dopants · CPC title
Superlattices; Multiple quantum well structures · CPC title
having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP · CPC title
- H10H20/812Primary
within the light-emitting regions, e.g. having quantum confinement structures · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US2020235262A1 cover?
- The present disclosure relates to a device that includes, in order, an emitter layer, a quantum well, and a base layer, where the emitter layer has a first bandgap, the base layer has a second bandgap, and the first bandgap is different than the second bandgap by an absolute difference greater than or equal to 25 meV.
- Who is the assignee on this patent?
- Alliance Sustainable Energy
- What technology area does this patent fall under?
- Primary CPC classification H10H20/812. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Jul 23 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).