Sputtering target, oxide semiconductor thin film, thin film transistor, and electronic device

Patent metadata

Field	Value
Publication number	US-2020235247-A1
Application number	US-201816634855-A
Country	US
Kind code	A1
Filing date	Aug 1, 2018
Priority date	Aug 1, 2017
Publication date	Jul 23, 2020
Grant date	—

Abstract

In the formula (1), In, Zn, Sn, and X represent contents of the In element, Zn element, Sn element, and X element in the oxide sinter, respectively, and the X element is at least one element selected from Ge, Si, Y, Zr, Al, Mg, Yb and Ga.

First claim

1 . A sputtering target comprising an oxide sinter comprising indium (In) element, tin (Sn) element, zinc (Zn) element, X element and oxygen, the oxide sinter comprising a spinel structure compound represented by Zn 2 SnO 4 and satisfying a formula (1) representing an atomic ratio of the elements,
0.001≤X/(In+Sn+Zn+X)≤0.05  (1)
where: In, Zn, Sn, and X represent contents of the In element, Zn element, Sn element, and X element in the oxide sinter, respectively, and the X element is at least one element selected from Ge, Si, Y, Zr, Al, Mg, Yb and Ga.

2 . The sputtering target according to claim 1 , wherein the atomic ratio represented by the formula (1) of the oxide sinter is in a range from 0.003 to 0.03.

3 . The sputtering target according to claim 1 , wherein the oxide sinter satisfies a formula (2) below,
0.40≤Zn/(In+Sn+Zn)≤0.80  (2).

4 . The sputtering target according to claim 1 , wherein the oxide sinter satisfies a formula (3) below,
0.15≤Sn/(Sn+Zn)≤0.40  (3).

5 . The sputtering target according to claim 1 , wherein the oxide sinter satisfies a formula (4) below,
0.10≤In/(In+Sn+Zn)≤0.35  (4).

6 . The sputtering target according to claim 1 , wherein the oxide sinter comprises a hexagonal laminar compound represented by In 2 O 3 (ZnO) m in which m is in a range from 2 to 7.

7 . The sputtering target according to claim 1 , wherein the oxide sinter exhibits an average deflective strength of 150 MPa or more.

8 . The sputtering target according to claim 1 , wherein a Weibull coefficient of an average deflective strength of the oxide sinter is 7 or more.

9 . The sputtering target according to claim 1 , wherein
the oxide sinter has an average crystal grain size of 10 μm or less, and a difference between an average crystal grain size of a hexagonal laminar compound and an average crystal grain size of the spinel structure compound is 1 μm or less.

10 . The sputtering target according to claim 1 , wherein
the oxide sinter has an average crystal grain size of 10 μm or less, and a difference between an average crystal grain size of a Bixbyite structure compound and an average crystal grain size of the spinel structure compound is 1 μm or less.

11 . An oxide semiconductor thin-film comprising indium (In) element, tin (Sn) element, zinc (Zn) element, X element and oxygen, and satisfying a formula (1A) representing an atomic ratio of the elements,
0.001≤X/(In+Sn+Zn+X)≤0.05  (1A)
where: In, Zn, Sn, and X represent contents of the In element, Zn element, Sn element, and X element in the oxide semiconductor thin-film, respectively, and the X element is at least one element selected from Ge, Si, Y, Zr, Al, Mg, Yb and Ga.

12 . A thin-film transistor comprising the oxide semiconductor film according to claim 11 .

13 . An electronic device comprising the thin-film transistor according to claim 12 .

14 . The sputtering target according to claim 2 , wherein the oxide sinter satisfies a formula (2) below,
0.40≤Zn/(In+Sn+Zn)≤0.80  (2).

15 . The sputtering target according to claim 2 , wherein the oxide sinter satisfies a formula (3) below,
0.15≤Sn/(Sn+Zn)≤0.40  (3).

16 . The sputtering target according to claim 3 , wherein the oxide sinter satisfies a formula (3) below,
0.15≤Sn/(Sn+Zn)≤0.40  (3).

17 . The sputtering target according to claim 2 , wherein the oxide sinter satisfies a formula (4) below,
0.10≤In/(In+Sn+Zn)≤0.35  (4).

18 . The sputtering target according to claim 3 , wherein the oxide sinter satisfies a formula (4) below,
0.10≤In/(In+Sn+Zn)≤0.35  (4).

19 . The sputtering target according to claim 4 , wherein the oxide sinter satisfies a formula (4) below,
0.10≤In/(In+Sn+Zn)≤0.35  (4).

Assignees

• Idemitsu Kosan Co

Inventors

• Oyama Masashi
• Itose Mami

Classifications

• H10P14/3454

  Amorphous · CPC title

• H10P14/3434 Primary

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/3238

  being insulating materials · CPC title