Interposer with manganese oxide adhesion layer

Patent metadata

Field	Value
Publication number	US-2020227277-A1
Application number	US-201916716883-A
Country	US
Kind code	A1
Filing date	Dec 17, 2019
Priority date	Jan 10, 2019
Publication date	Jul 16, 2020
Grant date	—

Abstract

A method of forming an article, comprising: forming an adhesion layer comprising MnO x on a glass, glass-ceramic or ceramic wafer; calcining the adhesion layer such that a first portion of the MnO x of the adhesion layer is chemically bonded to the wafer; depositing a metal layer on the adhesion layer; and processing the metal layer and the adhesion layer such that a portion of the MnO x of the adhesion layer is chemically bonded to the metal layer.

First claim

What is claimed is:

1 . A method of forming an article, comprising:
forming an adhesion layer comprising MnO x on a wafer, the wafer comprising glass, a glass-ceramic or a ceramic; calcining the adhesion layer, the calcining comprising heating the adhesion layer to form a calcined adhesion layer, the calcined adhesion layer comprising a chemical bond between the MnO x and the wafer; and depositing a conductive layer on the calcined adhesion layer, the conductive layer comprising a first metal.

2 . The method of claim 1 , wherein the wafer comprises glass.

3 . The method of claim 1 , wherein the conductive layer comprises a thickness of from about 50 nm to about 50 μm.

4 . The method of claim 1 , wherein the first metal comprises Cu.

5 . The method of claim 1 , wherein the depositing a conductive layer comprises electroless deposition of the first metal.

6 . The method of claim 1 , wherein the calcining comprises heating the adhesion layer to a temperature in the range from 200° C. to 800° C.

7 . The method of claim 1 , wherein the calcined adhesion layer comprises Mn in two or more oxidation states.

8 . The method of claim 1 , wherein the wafer comprises a via and the forming an adhesion layer comprises forming the adhesion layer on a sidewall of the via.

9 . The method of claim 8 , wherein the sidewall has a length in a direction normal to a surface of the wafer and the adhesion layer directly contacts the sidewall along an entirety of the length.

10 . The method of claim 1 , further comprising thermal treatment of the conductive layer, the thermal treatment forming an intermix layer, the intermix layer comprising the first metal in an oxidized state and a portion of the MnO x .

11 . The method of claim 10 , further comprising exposing the intermix layer to a reducing agent, the reducing agent reducing the first metal in an oxidized state to a neutral state.

12 . The method of claim 1 , wherein the forming an adhesion layer comprises applying a solution to the wafer, the solution comprising a compound containing Mn and O.

13 . The method of claim 12 , wherein the compound comprises MnO x in the form of nanoparticles, the nanoparticles having a D50 largest length dimension of from about 10 nm to about 500 nm.

14 . The method of claim 12 , wherein the compound comprises Mn bonded to an organic group.

15 . An article comprising:
a wafer, the wafer comprises a glass, a glass ceramic, or a ceramic, the wafer further comprising a via, the via having a sidewall; and a layer of MnO x in direct contact with the sidewall.

16 . The article of claim 15 , wherein the layer of MnO x is chemically bonded to the sidewall.

17 . The article of claim 15 , wherein the article further comprises an intermix layer in direct contact with the layer of MnO x , the intermix layer comprising a first metal in an oxidized state interspersed within a portion of the MnO x .

18 . The article of claim 17 , wherein the first metal in an oxidized state is chemically bonded to the portion of the MnO x .

19 . The article of claim 17 , wherein the intermix layer further comprises the first metal in a neutral state.

20 . The article of claim 17 , wherein the first metal is Cu.

Assignees

• Corning Inc

Inventors

• Brown Philip Simon
• Gu Yunfeng
• Kanungo Mandakini
• Mazumder Prantik
• Vaddi Rajesh

Classifications

• H10W70/692

  Ceramics or glasses · CPC title

• H10W70/69

  Insulating materials thereof · CPC title

• H10W70/66

  Conductive materials thereof · CPC title

• H10W70/65

  Shapes or dispositions of interconnections · CPC title

• H10W70/635

  Through-vias · CPC title