Mask and method of manufacturing mask assembly including the same

Patent metadata

Field	Value
Publication number	US-2020206765-A1
Application number	US-202016817325-A
Country	US
Kind code	A1
Filing date	Mar 12, 2020
Priority date	Sep 12, 2016
Publication date	Jul 2, 2020
Grant date	—

Abstract

A mask and a method of manufacturing a mask assembly, the mask including a body, and the body including one end and another end facing each other in a length direction and having a first surface and a second surface facing each other in a thickness direction; and a pattern region between the one end and the other end, the pattern region including a plurality of pattern holes and a plurality of ribs between the plurality of pattern holes, wherein a curl value of the mask, which is defined as a shortest distance from a plane tangent to a center of the body to the one end or the other end of the body, is 1,000 μm to 4,000 μm.

First claim

What is claimed is:

1 . A mask, comprising:
a first welding region at one end of the mask; a second welding region at another end of the mask, the other end of the mask facing one end of the mask in a length direction; and a pattern region between the first welding region and the second welding region, wherein the pattern region includes a plurality of ribs, each rib including an upper surface having a first length and a lower surface having a second length that is longer than the first length, and wherein a curl value of the mask, which is defined as a shortest distance from a plane tangent to a center of the body to one of the first welding region and the second welding region, is 1,000 μm to 4,000 μm.

2 . The mask as claimed in claim 1 , wherein:
each of the first welding region, the second welding region, and the pattern region contains nickel and iron, and the content of nickel in the first welding region, the second welding region, and the pattern region is 35 wt % to 40 wt %, based on a total weight of nickel and iron.

3 . The mask as claimed in claim 1 , wherein a thickness of at least one of the first and second welding regions is equal to or greater than a thickness of the pattern region.

4 . The mask as claimed in claim 1 , wherein a thickness of the pattern region is 6 μm to 10 μm.

5 . A method of manufacturing a mask assembly, the method comprising:
forming a mask such that the mask has one surface and another surface facing each other in a thickness direction; and attaching the mask to a mask frame such that the one surface of the mask is in contact with the mask frame, wherein a curl value of the mask, which is defined as a shortest distance from a plane tangent to a center of the body to the one end or the other end of the body, is 1,000 μm to 4,000 μm.

6 . The method as claimed in claim 5 , further comprising stretching the mask in a length direction after the forming the mask, wherein the mask attached to the mask frame has a curl value of 0 μm to 400 μm.

7 . The method as claimed in claim 6 , wherein, in the stretching the mask, the mask is stretched by a tensile resultant force of 0.4 Kgf to 6.0 Kgf.

8 . The method as claimed in claim 5 , wherein:
the mask contains nickel and iron, and a content of nickel in the mask is 35 wt % to 40 wt %, based on a total weight of nickel and iron.

9 . The method as claimed in claim 5 , wherein:
the mask includes a first welding region at the one end of the mask in a length direction, a second welding region disposed at the other end of the mask facing the one end in the length direction, and a pattern region between the first welding region and the second welding region, and in the forming the mask, a thickness of at least one of the first and second welding regions is equal to or greater than a thickness of the pattern region.

10 . The method as claimed in claim 9 , wherein the thickness of the pattern region is 6 μm to 10 μm.

11 . The method as claimed in claim 5 , wherein forming the mask includes:
forming a photoresist layer on a substrate; forming a photomask on the photoresist layer and etching at least a part of the photoresist layer using the photomask, so as to form a plurality of photoresist patterns spaced apart from each other; forming a metal layer between the plurality of photoresist patterns; and removing the plurality of photoresist patterns and the substrate.

12 . The method as claimed in claim 11 , wherein forming the metal layer includes applying a constant current to the metal layer.

13 . The method as claimed in claim 11 , wherein the metal layer is formed using a metal plating solution, and the metal layer is formed in an amount of 1 wt % to 10 wt %, based on a total weight of the metal plating solution.

Assignees

• Samsung Display Co Ltd

Inventors

• Gong Su Cheol
• Kang Min Goo
• Kang Taek Kyo
• Ko Jung Woo
• Kim Min Ju
• RYU Young Eun
• Moon Jae Suk
• Min Soo Hyun

Classifications

• B05B12/20 Primary

  Masking elements, i.e. elements defining uncoated areas on an object to be coated · CPC title

• C23C14/042 Primary

  using masks · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10K71/166 Primary

  using selective deposition, e.g. using a mask · CPC title

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title