Semiconductor device, manufacturing method thereof, display device, and electronic device

Patent metadata

Field	Value
Publication number	US-2020185233-A1
Application number	US-202016787110-A
Country	US
Kind code	A1
Filing date	Feb 11, 2020
Priority date	Feb 18, 2016
Publication date	Jun 11, 2020
Grant date	—

Abstract

The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

First claim

1 . A manufacturing method of a semiconductor device comprising the steps of:
forming a first oxide semiconductor film over a substrate; forming a gate insulating layer over the first oxide semiconductor film using a plasma CVD apparatus, the gate insulating layer comprising silicon, nitrogen, and oxygen; performing a plasma treatment in an atmosphere comprising oxygen using the plasma CVD apparatus after forming the gate insulating layer; and forming a gate electrode on the gate insulating layer after preforming the plasma treatment.

2 . The manufacturing method of a semiconductor device according to claim 1 , further comprising the step of performing a heat treatment at a temperature higher than or equal to 150° C. and lower than or equal to 450° C. after forming the gate electrode.

3 . The manufacturing method of a semiconductor device according to claim 1 , wherein the first oxide semiconductor film comprises indium, gallium, and zinc.

4 . The manufacturing method of a semiconductor device according to claim 1 , wherein the gate insulating layer is formed at a substrate temperature lower than or equal to 350° C.

5 . The manufacturing method of a semiconductor device according to claim 1 , wherein the plasma treatment is performed at a substrate temperature lower than or equal to 350° C.

6 . The manufacturing method of a semiconductor device according to claim 1 , wherein the gate electrode is formed using a sputtering apparatus.

7 . The manufacturing method of a semiconductor device according to claim 1 , wherein the gate electrode comprises a second oxide semiconductor film.

8 . The manufacturing method of a semiconductor device according to claim 7 , wherein the second oxide semiconductor film comprises indium, gallium, and zinc.

9 . A manufacturing method of a semiconductor device comprising the steps of:
forming a first oxide semiconductor film over a substrate; forming a gate insulating layer over the first oxide semiconductor film using a plasma CVD apparatus, the gate insulating layer comprising silicon, nitrogen, and oxygen; performing a plasma treatment in an atmosphere comprising oxygen using the plasma CVD apparatus after forming the gate insulating layer; forming a second oxide semiconductor film on the gate insulating layer in an atmosphere comprising oxygen by sputtering after performing the plasma treatment; and forming a gate electrode by etching the second oxide semiconductor film.

10 . The manufacturing method of a semiconductor device according to claim 9 , further comprising the step of performing a heat treatment at a temperature higher than or equal to 150° C. and lower than or equal to 450° C. after forming the gate electrode.

11 . The manufacturing method of a semiconductor device according to claim 9 , wherein the first oxide semiconductor film comprises indium, gallium, and zinc.

12 . The manufacturing method of a semiconductor device according to claim 9 , wherein the gate insulating layer is formed at a substrate temperature lower than or equal to 350° C.

13 . The manufacturing method of a semiconductor device according to claim 9 , wherein the plasma treatment is performed at a substrate temperature lower than or equal to 350° C.

14 . The manufacturing method of a semiconductor device according to claim 9 , wherein the second oxide semiconductor film comprises indium, gallium, and zinc.

15 . A manufacturing method of a semiconductor device comprising the steps of:
forming a first gate electrode over a substrate; forming a first gate insulating layer over the first gate electrode; forming a first oxide semiconductor film over the first gate insulating layer; forming a second gate insulating layer over the first oxide semiconductor film using a plasma CVD apparatus, the second gate insulating layer comprising silicon, oxygen, and nitrogen; performing a plasma treatment in an atmosphere comprising oxygen using the plasma CVD apparatus after forming the second gate insulating layer; and forming a second gate electrode on the second gate insulating layer after performing the plasma treatment.

16 . The manufacturing method of a semiconductor device according to claim 15 , further comprising the step of performing a heat treatment at a temperature higher than or equal to 150° C. and lower than or equal to 450° C. after forming the second gate electrode.

17 . The manufacturing method of a semiconductor device according to claim 15 , wherein the first oxide semiconductor film comprises indium, gallium, and zinc.

18 . The manufacturing method of a semiconductor device according to claim 15 , wherein the second gate insulating layer is formed at a substrate temperature lower than or equal to 350° C.

19 . The manufacturing method of a semiconductor device according to claim 15 , wherein the plasma treatment is performed at a substrate temperature lower than or equal to 350° C.

20 . The manufacturing method of a semiconductor device according to claim 15 , wherein the second gate electrode is formed using a sputtering apparatus.

21 . The manufacturing method of a semiconductor device according to claim 15 , wherein the second gate electrode comprises a second oxide semiconductor film.

22 . The manufacturing method of a semiconductor device according to claim 21 , wherein the second oxide semiconductor film comprises indium, gallium, and zinc.

Assignees

• Semiconductor Energy Lab

Inventors

• Jintyou Masami
• Koezuka Junichi
• Hamochi Takashi
• Hosaka Yasuharu

Classifications

• H10P50/28

  of insulating materials · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6927 Primary

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6522

  introduced into a nitride material, e.g. changing SiN to SiON · CPC title