Chemical mechanical polishing apparatus for controlling polishing uniformity

Patent metadata

Field	Value
Publication number	US-2020185231-A1
Application number	US-201916540466-A
Country	US
Kind code	A1
Filing date	Aug 14, 2019
Priority date	Dec 10, 2018
Publication date	Jun 11, 2020
Grant date	—

Abstract

A chemical mechanical polishing (CMP) apparatus includes a polishing pad on a polishing platen, a polishing head on the polishing pad, the polishing head having a membrane to hold a wafer on the polishing pad, and a polishing slurry feeding line to feed a polishing slurry, and a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainer ring including a polishing slurry feeding inlet connected to the polishing slurry feeding line to feed the polishing slurry onto the polishing pad.

First claim

What is claimed is:

1 . A chemical mechanical polishing (CMP) apparatus, comprising:
a polishing pad on a polishing platen; a polishing head on the polishing pad, the polishing head including:
a membrane to hold a wafer on the polishing pad, and
a polishing slurry feeding line to feed a polishing slurry; and
a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainer ring including a polishing slurry feeding inlet connected to the polishing slurry feeding line to feed the polishing slurry onto the polishing pad.

2 . The CMP apparatus as claimed in claim 1 , wherein:
the retainer ring includes a ring-shaped body portion coupled to a bottom portion of the polishing head, and the polishing slurry feeding inlet includes a through-hole penetrating the ring-shaped body portion.

3 . The CMP apparatus as claimed in claim 2 , wherein, in a cross-sectional view of the through-hole, a top width of the through-hole is greater than a bottom width of the through-hole.

4 . The CMP apparatus as claimed in claim 2 , wherein the through-hole is provided as a plurality of through-holes along the ring-shaped body portion, the plurality of through-holes being within a same distance from a central point of the ring-shaped body portion.

5 . The CMP apparatus as claimed in claim 2 , wherein the through-hole is provided as a plurality of through-holes along the ring-shaped body portion, the plurality of through-holes being within different distances from a central point of the ring-shaped body portion.

6 . The CMP apparatus as claimed in claim 1 , wherein the polishing slurry feeding line is in fluid communication with the polishing slurry feeding inlet and the polishing pad, and the polishing slurry includes at least one of an abrasive, a passivator, an oxidizer, and a chelating agent.

7 . The CMP apparatus as claimed in claim 1 , wherein the polishing head includes a head body portion, the polishing slurry feeding line extending through the head body portion.

8 . The CMP apparatus as claimed in claim 1 , wherein the retainer ring includes:
a ring-shaped body portion coupled to a bottom portion of the polishing head, a plurality of flow prevention bumps extending from the ring-shaped body portion, the plurality of flow prevention bumps to prevent the polishing slurry from flowing at a contact surface at which the ring-shaped body portion contacts the polishing pad, and a flow groove between adjacent ones of the plurality of flow prevention bumps.

9 . The CMP apparatus as claimed in claim 8 , wherein the polishing slurry feeding inlet is through at least one of the flow groove and the plurality of flow prevention bumps.

10 . The CMP apparatus as claimed in claim 1 , wherein the retainer ring includes:
a first ring-shaped body portion coupled to a bottom portion of the polishing head; and a second ring-shaped body portion coupled to the first ring-shaped body portion and contacting the polishing pad, the polishing slurry feeding inlet includes a through-hole penetrating the first ring-shaped body portion and the second ring-shaped body portion.

11 . The CMP apparatus as claimed in claim 10 , wherein the first ring-shaped body portion includes a metal material and the second ring-shaped body portion includes a plastic material.

12 . The CMP apparatus as claimed in claim 10 , wherein the second ring-shaped body portion includes a mounting groove, the first ring-shaped body portion being mounted in the mounting groove.

13 . The CMP apparatus as claimed in claim 1 , wherein the polishing slurry feeding line includes first and second auxiliary polishing slurry feeding lines connected to different slurry sources, both the first and second auxiliary polishing slurry feeding lines extending through the polishing head.

14 . The CMP apparatus as claimed in claim 1 , further comprising an additional polishing slurry feeding line external to the polishing head and directly facing the polishing pad, the polishing slurry feeding inlet connecting the polishing slurry feeding line to the polishing pad.

15 . A chemical mechanical polishing (CMP) apparatus, comprising:
a polishing pad on a polishing platen; a polishing head on the polishing pad, the polishing head including:
a membrane to hold a wafer on the polishing pad, and
a polishing slurry feeding line having a first auxiliary polishing slurry feeding line to feed a first auxiliary polishing slurry and a second auxiliary polishing slurry feeding line configured to feed a second auxiliary polishing slurry; and
a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainer ring including first and second auxiliary polishing slurry feeding inlets connected to the first and second auxiliary polishing slurry feeding lines, respectively.

16 . The CMP apparatus as claimed in claim 15 , wherein the first auxiliary polishing slurry fed through the first auxiliary polishing slurry feeding line is connected to a first slurry source, and the second auxiliary polishing slurry fed through the second auxiliary polishing slurry is connected to a second slurry source different from the first slurry source.

17 . The CMP apparatus as claimed in claim 15 , wherein:
the retainer ring includes a ring-shaped body portion coupled to a bottom portion of the polishing head, the first auxiliary polishing slurry feeding inlet includes a first through-hole penetrating the ring-shaped body portion, the first through-hole being provided as a plurality of first through-holes spaced apart from each other along the ring-shaped body portion, and the second auxiliary polishing slurry feeding inlet includes a second through-hole penetrating the ring-shaped body portion, the second through-hole being provided as a plurality of second through-holes spaced apart from each other along the ring-shaped body portion.

18 . The CMP apparatus as claimed in claim 15 , wherein the polishing head includes a head body portion, and the first and second auxiliary polishing slurry feeding lines are in the head body portion.

19 . The CMP apparatus as claimed in claim 15 , wherein:
the retainer ring includes a ring-shaped body portion coupled to a bottom portion of the polishing head, the ring-shaped body portion includes a flow groove through which the first and second auxiliary polishing slurries flow at a contact surface at which the ring-shaped body portion contacts the polishing pad, and a flow prevention bump to prevent the first and second auxiliary polishing slurries from flowing, and the first and second auxiliary slurry feeding inlets are in at least one of the flow groove and the flow prevention bump.

20 . A chemical mechanical polishing (CMP) apparatus, comprising:
a polishing pad on a polishing platen; a first polishing slurry feeding line to feed a first polishing slurry onto the polishing pad; a polishing head including a membrane to hold a wafer on the polishing pad and a second polishing slurry feeding line to feed a second polishing slurry; and a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainer ring having a polishing slurry feeding inlet around the wafer and in contact with the second polishing slurry feeding line.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim In-Kwon
• Park Seung-Ho
• Bae Sang-Won
• Lee Woo-In
• Lee Hyo-San
• Jang Sun-Jae

Classifications

• H10P52/403 Primary

  of conductive or resistive materials · CPC title

• B24B57/02

  for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents · CPC title

• B24B37/04 Primary

  designed for working plane surfaces · CPC title

• B24B37/32

  Retaining rings · CPC title

• H10P52/402

  of semiconductor materials · CPC title