Magnetic memory device

Patent metadata

Field	Value
Publication number	US-2020161536-A1
Application number	US-201916684683-A
Country	US
Kind code	A1
Filing date	Nov 15, 2019
Priority date	Nov 16, 2018
Publication date	May 21, 2020
Grant date	—

Abstract

According to one embodiment, a magnetic memory device includes a first insulating region, a first counter insulating region, a first conductive member, and a first magnetic element. The first conductive member is provided between the first insulating region and the first counter insulating region. The first conductive member extends in a first direction crossing a second direction. The second direction is from the first insulating region toward the first counter insulating region. The first magnetic element is provided between the first insulating region and the first counter insulating region. A third direction from the first conductive member toward the first magnetic element crosses a plane including the first and second directions. A portion of a first insulating side surface of the first insulating region opposes the first conductive member. A portion of a first counter insulating side surface of the first counter insulating region opposes the first conductive member.

First claim

What is claimed is:

1 . A magnetic memory device, comprising:
a first insulating region; a first counter insulating region; a first conductive member provided between the first insulating region and the first counter insulating region, the first conductive member extending in a first direction crossing a second direction, the second direction being from the first insulating region toward the first counter insulating region; and a first magnetic element provided between the first insulating region and the first counter insulating region, a third direction from the first conductive member toward the first magnetic element crossing a plane including the first direction and the second direction, a portion of a first insulating side surface of the first insulating region opposing the first conductive member and being oblique to the first direction, a portion of a first counter insulating side surface of the first counter insulating region opposing the first conductive member and being oblique to the first direction.

2 . The device according to claim 1 , wherein
a plurality of the first magnetic elements is provided, and a distance along the second direction between the first insulating side surface and the first counter insulating side surface repeats an increase and decrease corresponding to the plurality of first magnetic elements.

3 . The device according to claim 1 , further comprising:
a second insulating region; and a second counter insulating region, the first conductive member including
a first portion,
a second portion, and
a third portion between the first portion and the second portion,
a direction from the first portion toward the second portion being aligned with the first direction, the second insulating region and the second counter insulating region being between the first insulating region and the first counter insulating region in the second direction, a direction from the first portion toward the second insulating region, a direction from the second portion toward the second counter insulating region, and a direction from the third portion toward the first magnetic element being aligned with the third direction, a material of the first insulating region being different from a material of the second insulating region.

4 . The device according to claim 3 , wherein
the first insulating region has at least one of
a first concentration higher than a concentration of a silanol group included in the second insulating region,
a second concentration higher than a concentration of a hydroxide group included in the second insulating region,
a third concentration higher than a concentration of a hydrocarbon group included in the second insulating region,
a fourth concentration higher than a concentration of an imide group included in the second insulating region,
a porosity higher than a porosity of the second insulating region, or
a density lower than a density of the second insulating region.

5 . The device according to claim 3 , wherein
the first insulating region has a first side surface opposing the first magnetic element in the second direction, the second insulating region has a second side surface opposing the first magnetic element in the first direction, the first side surface is convex toward the first magnetic element in a first cross section including the second direction and the third direction, and a curvature of the first side surface in the first cross section is higher than a curvature of the second side surface in a second cross section including the first direction and the third direction.

6 . The device according to claim 1 , further comprising a first member,
the first member including a first member region, a second member region, and a third member region between the first member region and the second member region, a direction from the first member region toward the second member region being aligned with the second direction, a direction from the first member region toward the first insulating region and a direction from the third member region toward the first magnetic element being aligned with the third direction, the third member region having a side surface crossing the second direction, the first insulating region opposing at least a portion of the side surface in the second direction.

7 . A magnetic memory device, comprising:
a first conductive member extending along a first direction and including a first portion, a second portion, and a third portion between the first portion and the second portion, the first direction being from the first portion toward the second portion; a first insulating region, a second direction from the first insulating region toward the first conductive member crossing the first direction; a first magnetic element, a third direction from the third portion toward the first magnetic element crossing a plane including the first direction and the second direction; and a first member, the first member including a first member region, a second member region, and a third member region between the first member region and the second member region, a direction from the first member region toward the second member region being aligned with the second direction, a direction from the first member region toward the first insulating region and a direction from the third member region toward the first magnetic element being aligned with the third direction, the third member region having a side surface crossing the second direction, the first insulating region opposing at least a portion of the side surface in the second direction.

8 . The device according to claim 7 , further comprising:
a second insulating region; and a second counter insulating region, a direction from the first portion toward the second insulating region, a direction from the second portion toward the second counter insulating region, and a direction from the third portion toward the first magnetic element being aligned with the third direction, the first insulating region having a first side surface opposing the first magnetic element in the second direction, the second insulating region having a second side surface opposing the first magnetic element in the first direction, the first side surface being convex toward the first magnetic element in a first cross section including the second direction and the third direction, a curvature of the first side surface in the first cross section being higher than a curvature of the second side surface in a second cross section including the first direction and the third direction.

9 . A magnetic memory device, comprising:
a first conductive member including a first portion, a second portion, and a third portion between the first portion and the second portion, the first conductive member being aligned with a first direction, the direction being from the first portion toward the second portion; a first insulating region, a second direction from the first insulating region toward the first conductive member crossing the first direction, a second insulating region, a direction from the second insulating region toward the first conductive member being aligned with the first direction, a material of the first insulating region being different from a material of the second insulating region; and a first magnetic element, a third direction from the third portion toward the first magnetic element crossing a plane including the first direction and the second direction.

10 . The device according to claim 9 , wherein
the first insulating region has at least one of
a first concentration higher than a concentration of a silanol group included in the second insulating

Assignees

• Toshiba Kk

Inventors

• Shirotori Satoshi
• Ohsawa Yuichi
• Sugiyama Hideyuki
• BUYANDALAI Altansargai
• Shimizu Mariko
• Yoda Hiroaki

Classifications

• H01L43/12

  Electricity · mapped topic

• H01L43/02 Primary

  Electricity · mapped topic

• H10N50/01

  Manufacture or treatment · CPC title

• H10N50/10

  Magnetoresistive devices · CPC title

• H10B61/20 Primary

  comprising components having three or more electrodes, e.g. transistors · CPC title