Photo detection element, optical sensor, and method of manufacturing photo detection element

Patent metadata

Field	Value
Publication number	US-2020152679-A1
Application number	US-201916587095-A
Country	US
Kind code	A1
Filing date	Sep 30, 2019
Priority date	Nov 8, 2018
Publication date	May 14, 2020
Grant date	—

Abstract

A photo detection element includes: a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers that are stacked such that lattices of the graphene layers are randomly displaced from each other in plan view; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode differing from a material of the first electrode.

First claim

What is claimed is:

1 . A photo detection element comprising:
a substrate; a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers that are stacked such that lattices of the graphene layers are randomly displaced from each other in plan view; a first electrode that is in contact with the light-receiving layer; and a second electrode that is in contact with the light-receiving layer, a material of the second electrode differing from a material of the first electrode.

2 . The photo detection element according to claim 1 , wherein
a band curve of the light-receiving layer is linear at a K point in a reciprocal lattice space.

3 . The photo detection element according to claim 1 , wherein
an underlying layer containing any one of hexagonal boron nitride and diamond-like carbon is formed over the substrate, and the light-receiving layer is formed over the underlying layer.

4 . The photo detection element according to claim 1 , wherein a recessed portion is formed in a surface of the substrate under the light-receiving layer.

5 . The photo detection element according to claim 1 , wherein
a hexagonal boron nitride layer is formed over an upper surface of the light-receiving layer.

6 . The photo detection element according to claim 1 , wherein
the light-receiving layer has a first side surface and a second side surface, the first side surface being inclined with respect to a normal direction of the substrate, the second side surface being inclined with respect to the normal direction, and the first electrode is formed over the first side surface, and the second electrode is formed over the second side surface.

7 . The photo detection element according to claim 1 , wherein
the light-receiving layer includes a first region and a second region, first holes are formed in the light-receiving layer in the first region, second holes are formed in the light-receiving layer in the second region, the first electrode is formed in the first holes, and the second electrode is formed in the second holes.

8 . The photo detection element according to claim 7 , wherein
each of the first holes has a tapered shape in cross-sectional view, and each of the second holes has a tapered shape in cross-sectional view.

9 . The photo detection element according to claim 1 , wherein
first grooves and second grooves are formed in the light-receiving layer, the first electrode is comb-shaped, the first electrode including first teeth embedded in the first grooves, and the second electrode is comb-shaped, the second electrode including second teeth embedded in the second grooves.

10 . The photo detection element according to claim 1 , wherein
the light-receiving layer is separated into a first light receiving section and a second light receiving section by an element separation groove, the first electrode and the second electrode are provided to each of the first light receiving section and the second light receiving section, and the first electrode of the first light receiving section is electrically connected to the second electrode of the second light receiving section.

11 . A method of manufacturing a photo detection element, comprising:
forming, over a substrate, a light-receiving layer including graphene layers that are stacked such that lattices of the graphene layers are randomly displaced from each other in plan view; forming a first electrode that is in contact with the light-receiving layer; and forming a second electrode such that the second electrode is in contact with the light-receiving layer, a material of the second electrode differing from a material of the first electrode.

12 . The method according to claim 11 , wherein a band curve of the light-receiving layer is linear at a K point in a reciprocal lattice space.

13 . The method according to claim 11 , wherein
the forming of the light-receiving layer includes transferring, to the substrate at one time, the graphene layers formed over a first supporting layer such that the lattices of the graphene layers are randomly displaced from each other in plan view.

14 . The method according to claim 11 , wherein
the forming of the light-receiving layer includes transferring a graphene monoatomic layer formed over a second supporting layer to the substrate one layer by one layer while positions of the substrate and the second supporting layer are randomly displaced from each other.

15 . The method according to claim 11 , further comprising
forming a recessed portion in a surface of the substrate under the light-receiving layer.

16 . The method according to claim 11 , further comprising
forming an underlying layer containing any one of hexagonal boron nitride and diamond-like carbon over the substrate before the forming of the light-receiving layer.

17 . The method according to claim 16 , wherein
the forming of the underlying layer includes transferring the underlying layer formed over a third supporting layer to the substrate while heating the substrate.

18 . An optical sensor comprising:
pixels formed at intervals in a plane, each of the pixels outputting an output voltage corresponding to an intensity of an incident light; and an amplifier circuit configured to amplify the output voltage, wherein each of the pixels includes:
a substrate;
a light-receiving layer formed over the substrate, the light-receiving layer including graphene layers that are stacked such that lattices of the graphene layers are randomly displaced from each other in plan view;
a first electrode that is in contact with the light-receiving layer; and
a second electrode that is in contact with the light-receiving layer, a material of the second electrode differing from a material of the first electrode.

Assignees

• Fujitsu Ltd

Inventors

• Sato Shintaro
• Nishino Hironori
• Kondo Daiyu
• Hayashi Kenjiro

Classifications

• H01L29/1606

  Electricity · mapped topic

• H01L27/14612 Primary

  Electricity · mapped topic

• H01L31/102

  Electricity · mapped topic

• H10D62/882

  Graphene · CPC title

• H10F77/20

  Electrodes · CPC title