Minimizing void formation in semiconductor vias and trenches
US-2015371899-A1 · Dec 24, 2015 · US
US2020152467A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2020152467-A1 |
| Application number | US-202016739569-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 10, 2020 |
| Priority date | Jul 10, 2017 |
| Publication date | May 14, 2020 |
| Grant date | — |
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Electroplating processing systems according to the present technology may include a recirculating tank containing a first volume of processing fluid. The recirculating tank may be fluidly coupled with a delivery pump. The systems may include a vessel configured to receive the processing fluid from the pump. The vessel may include an inner chamber and an outer chamber, and the inner chamber may be sized to hold a second volume of processing fluid less than the first volume of processing fluid. A liquid level sensor may be associated with the vessel to provide a liquid level indication in the outer chamber. The systems may include a return line coupled with an outlet of the vessel and coupled with an inlet of the recirculating tank. The systems may also include a return pump fluidly coupled with the return line. The return pump may be electrically coupled with the liquid level sensor.
Opening claim text (preview).
What is claimed is: 1 . An electroplating processing system comprising: a recirculating tank containing a first volume of processing fluid, wherein the recirculating tank is fluidly coupled with a delivery pump; a vessel configured to receive the processing fluid from the pump, wherein the vessel comprises an inner chamber and an outer chamber, wherein the inner chamber is sized to hold a second volume of processing fluid less than the first volume of processing fluid, and wherein a liquid level sensor is associated with the vessel to provide a liquid level indication in the outer chamber; a return line positioned between an outlet of the vessel and an inlet of the recirculating tank; and a return pump fluidly coupled with the return line, wherein the return pump is electrically coupled with the liquid level sensor. 2 . The electroplating processing system of claim 1 , wherein the return line comprises a restriction sized to maintain a gravity-assisted fluid flow rate less than a steady-state delivery rate of the delivery pump. 3 . The electroplating processing system of claim 1 , wherein the return pump is configured to disengage when the liquid level sensor indicates a fluid level in the outer chamber of the vessel at or below a predetermined minimum. 4 . The electroplating processing system of claim 1 , wherein the return pump comprises an integral-level control algorithm to determine pump speed based on readings from the liquid level sensor. 5 . The electroplating processing system of claim 1 , wherein the return pump is chemically compatible with at least one of methanesulfonic acid, potassium hydroxide, and boric acid. 6 . The electroplating processing system of claim 1 , wherein the return pump is rated at less than or about 100 Watts. 7 . The electroplating processing system of claim 1 , wherein the vessel when containing the second volume of fluid is positioned within the system at a fluid height differential from the recirculating tank of less than 24 inches. 8 . An electroplating processing system comprising: a recirculating tank; a vessel configured to receive a processing fluid from the recirculating tank, wherein the vessel comprises an inner chamber and an outer chamber; a return line positioned between an outlet of the vessel and an inlet of the recirculating tank; and a container fluidly coupled with the return line, wherein the container is configured to receive processing fluid exiting the vessel, and wherein the container comprises a media configured to extract entrained bubbles within the processing fluid. 9 . The electroplating processing system of claim 8 , wherein the media is configured to extract bubbles characterized by a diameter of 1 μm or greater. 10 . The electroplating processing system of claim 8 , wherein the media is chemically compatible with at least one of methanesulfonic acid, potassium hydroxide, and boric acid. 11 . The electroplating processing system of claim 8 , wherein the media comprises a polymeric material. 12 . The electroplating processing system of claim 11 , wherein the polymeric material comprises a mesh disposed within the container. 13 . An electroplating processing system comprising: a recirculating tank; a processing vessel configured to receive a processing fluid from the recirculating tank, wherein the vessel comprises an inner chamber and an outer chamber; a return line positioned between an outlet of the vessel and an inlet of the recirculating tank; and a buffer vessel fluidly coupled between the processing vessel and the recirculating tank, wherein the buffer vessel comprises a first exit port from the buffer vessel, wherein the buffer vessel comprises a standpipe coupled with a base of the buffer vessel, wherein the standpipe is characterized by a sloped surface of an interior edge at a top of the standpipe, wherein the standpipe is characterized by a port proximate the base of the buffer vessel, and wherein the standpipe provides access to a second exit port from the buffer vessel. 14 . The electroplating processing system of claim 13 , wherein the buffer vessel comprises a channel positioned within the buffer vessel and configured to deliver processing fluid down into the buffer vessel. 15 . The electroplating processing system of claim 13 , wherein a media configured to extract entrained bubbles within the processing fluid is positioned within the standpipe or within the return line.
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