Etching composition, method for forming pattern and method for manufacturing a display device using the same

Patent metadata

Field	Value
Publication number	US-2020148951-A1
Application number	US-201916579073-A
Country	US
Kind code	A1
Filing date	Sep 23, 2019
Priority date	Nov 14, 2018
Publication date	May 14, 2020
Grant date	—

Abstract

An etching composition includes an inorganic acid compound, a carboxylic acid compound, a sulfonic acid compound, a glycol compound, a nitrogen-containing dicarbonyl compound, a sulfate compound and water.

First claim

1 . An etching composition, comprising an inorganic acid compound, a carboxylic acid compound, a sulfonic acid compound, a glycol compound, a nitrogen-containing dicarbonyl compound, a sulfate compound and water.

2 . The etching composition as claimed in claim 1 , wherein the inorganic acid compound includes at least one selected from nitric acid (HNO 3 ), sulfuric acid (H 2 SO 4 ) and hydrochloric acid (HCl).

3 . The etching composition as claimed in claim 1 , wherein the carboxylic acid compound includes at least one selected from acetic acid, (CH 3 CO 2 H), malic acid (C 4 H 6 O 5 ), citric acid (C 6 H 8 O 7 ), tartaric acid (C 4 H 6 O 6 ), lactic acid (C 3 H 6 O 3 ), formic acid (CH 2 O 2 ), succinic acid (C 4 H 6 O 4 ) and fumaric acid (C 4 H 4 O 4 ).

4 . The etching composition as claimed in claim 1 , wherein the sulfonic acid compound includes at least one selected from methanesulfonic acid (CH 3 SO 3 H), p-toluenesulfonic acid (CH 3 C 6 H 4 SO 3 H), benzenesulfonic acid (C 6 H 5 SO 3 H), amino methylsulfonic acid (CH 5 NO 3 S) and sulfamic acid (H 3 NSO 3 ).

5 . The etching composition as claimed in claim 1 , wherein the glycol compound includes at least one selected from diethylene glycol (C 4 H 10 O 3 ), ethylene glycol (HOCH 2 CH 2 OH), glycolic acid (CH 2 OHCOOH), propylene glycol (C 3 H 8 O 2 ) and triethylene glycol (C 6 H 14 O 4 ).

6 . The etching composition as claimed in claim 1 , wherein the nitrogen-containing dicarbonyl compound includes at least one selected from iminodiacetic acid (C 4 H 7 NO 4 ), imidazolidine-2,4-dione (C 3 H 4 N 2 O 2 ), succinimide (C 4 H 5 NO 2 ), glutarimide (C 5 H 7 NO 2 ), asparagine (C 4 H 8 N 2 O 3 ), glutamic acid (C 5 H 9 NO 4 ), aspartic acid (C 4 H 7 NO 4 ), pyro-glutamic acid (C 5 H 7 NO 3 ) and hippuric acid (C 9 H 9 NO 3 ).

7 . The etching composition as claimed in claim 1 , wherein the sulfate compound includes at least one selected from ammonium hydrogen sulfate ((NH 4 )HSO 4 ), ammonium sulfate ((NH 4 ) 2 SO 4 ), potassium hydrogen sulfate (KHSO 4 ), potassium sulfate (K 2 SO 4 ), sodium hydrogen sulfate (NaHSO 4 ) and sodium sulfate (Na 2 SO 4 ).

8 . The etching composition as claimed in claim 1 , including:
8.1 wt % to 9.9 wt % of the inorganic acid compound, 40 wt % to 55 wt % of the carboxylic acid compound, 1 wt % to 4.9 wt % of the sulfonic acid compound, 1 wt % to 5 wt % of the glycol compound, 2 wt % to 10 wt % of the nitrogen-containing dicarbonyl compound, 1 wt % to 15 wt % of the sulfate compound, and the remainder of water.

9 . The etching composition as claimed in claim 1 , wherein the etching composition is capable of etching a silver-containing thin film.

10 . The etching composition as claimed in claim 1 , wherein the etching composition is capable of etching a multiple layer structure including a silver-containing thin film and a metal oxide thin film, the metal oxide thin film including at least one selected from indium oxide, zinc oxide, tin oxide, indium tin oxide, indium zinc oxide and zinc tin oxide.

11 . The etching composition as claimed in claim 1 , wherein:
the inorganic acid compound includes nitric acid, the carboxylic acid compound includes acetic acid and citric acid, the sulfonic acid compound includes methanesulfonic acid, the glycol compound includes glycolic acid, the nitrogen-containing dicarbonyl compound includes imidazolidine-2,4-dione and pyro-glutamic acid, and the sulfate compound includes sodium hydrogen sulfate.

12 . The etching composition as claimed in claim 1 , wherein the nitrogen-containing dicarbonyl compound includes imidazolidine-2,4-dione and pyro-glutamic acid with the weight ratio of 2:1 to 1:2.

13 . A method for forming a pattern, the method comprising:
forming a multiple layer structure including a silver-containing thin film and a metal oxide thin film; and etching the multiple layer structure using an etching composition including an inorganic acid compound, a carboxylic acid compound, a sulfonic acid compound, a glycol compound, a nitrogen-containing dicarbonyl compound, a sulfate compound and water.

14 . The method as claimed in claim 13 , wherein the multiple layer structure includes a lower layer including a metal oxide, an intermediate layer on the lower layer, the intermediate layer including silver or a silver alloy, and an upper layer on the intermediate layer, the upper layer including a metal oxide.

15 . The method as claimed in claim 13 , wherein the etching composition includes:
8.1 wt % to 9.9 wt % of the inorganic acid compound, 40 wt % to 55 wt % of the carboxylic acid compound, 1 wt % to 4.9 wt % of the sulfonic acid compound, 1 wt % to 5 wt % of the glycol compound, 2 wt % to 10 wt % of the nitrogen-containing dicarbonyl compound, 1 wt % to 15 wt % of the sulfate compound, and the remainder of water.

16 . A method for manufacturing a display device, the method comprising:
forming an active pattern in a display area on a base substrate; forming a gate metal pattern including a gate electrode overlapping the active pattern; forming a source metal pattern including a connection pad disposed in a peripheral area surrounding the display area; forming a multiple layer structure including a silver-containing thin film and a metal oxide thin film; and etching the multiple layer structure using an etching composition including an inorganic acid compound, a carboxylic acid compound, a sulfonic acid compound, a glycol compound, a nitrogen-containing dicarbonyl compound, a sulfate compound and water to form an electrode pattern in the display area and to expose the connection pad.

17 . The method as claimed in claim 16 , wherein the source metal pattern has a single-layer structure or a multiple-layer structure, which includes aluminum.

18 . The method as claimed in claim 16 , wherein the multiple layer structure includes:
a lower layer including a metal oxide, an intermediate layer disposed on the lower layer and including silver or a silver alloy, and an upper layer disposed on the intermediate layer and including a metal oxide, wherein the metal oxide includes at least one selected from the group consisting of indium oxide, zinc oxide, tin oxide, indium tin oxide, indium zinc oxide and zinc tin oxide.

19 . The method as claimed in claim 16 , wherein the etching composition includes:
8.1 wt % to 9.9 wt % of the inorganic acid compound, 40 wt % to 55 wt % of the carboxylic acid compound, 1 wt % to 4.9 wt % of the sulfonic acid compound, 1 wt % to 5 wt % of the glycol compound, 2 wt % to 10 wt % of the nitrogen-containing dicarbonyl compound, 1 wt % to 15 wt % of the sulfate compound, and the remainder of water.

20 . The method as claimed in claim 16 , further comprising connecting a driving chip, which generates a driving signal, to the connection pad.

Assignees

• Samsung Display Co Ltd

Inventors

• Park Jonghee
• Kim Kitae
• Kim Jinseock
• Kim Gyu-Po
• Shin Hyun-Cheol
• Lee Dae-Woo
• Lee Sang-Hyuk
• Hong Zheng

Classifications

• H10P50/667

  by liquid etching only · CPC title

• C09K13/06 Primary

  with organic material · CPC title

• H10K59/12

  Active-matrix OLED [AMOLED] displays · CPC title

• C23F1/30

  for etching other metallic material · CPC title

• C23F1/02

  Local etching · CPC title