Luminescence Diode and Method for Producing the Same

Patent metadata

Field	Value
Publication number	US-2020119084-A1
Application number	US-201716310778-A
Country	US
Kind code	A1
Filing date	Jul 3, 2017
Priority date	Jul 7, 2016
Publication date	Apr 16, 2020
Grant date	—

Abstract

A luminescence diode and a method for producing a luminescence diode are disclosed. In an embodiment a luminescence diode includes a carrier substrate, a first semiconductor layer sequence including a first active layer suitable for emitting radiation having a first dominant wavelength λdom1 and a second semiconductor layer sequence including a second active layer suitable for emitting radiation having a second dominant wavelength λdom2, wherein the first semiconductor layer sequence and the second semiconductor layer sequence are arranged side by side on the carrier substrate, and wherein the first dominant wavelength λdom1 of the first active layer and the second dominant wavelength λdom2 of the second active layer are different from each other.

First claim

1 - 14 . (canceled)

15 . A luminescence diode comprising:
a carrier substrate; a first semiconductor layer sequence comprising a first active layer suitable for emitting radiation having a first dominant wavelength λ dom1 ; and a second semiconductor layer sequence comprising a second active layer suitable for emitting radiation having a second dominant wavelength λ dom2 , wherein the first semiconductor layer sequence and the second semiconductor layer sequence are arranged side by side on the carrier substrate, wherein the first dominant wavelength λ dom1 of the first active layer and the second dominant wavelength λ dom2 of the second active layer are different from each other, and wherein the luminescence diode is configured to emit light in an infrared spectral region.

16 . The luminescence diode according to claim 15 , wherein the first active layer and the second active layer each comprise an arsenide compound semiconductor material.

17 . The luminescence diode according to claim 15 , wherein the first semiconductor layer sequence and the second semiconductor layer sequence are vertically offset from each other so as to have different vertical distances from the carrier substrate, and wherein the first semiconductor layer sequence and the second semiconductor layer sequence are connected to the carrier substrate by a solder layer which compensates for the different vertical distances.

18 . The luminescence diode according to claim 15 , wherein the first semiconductor layer sequence and the second semiconductor layer sequence are electrically interconnected by a solder layer.

19 . The luminescence diode according to claim 15 , wherein the first semiconductor layer sequence and the second semiconductor layer sequence are electrically contacted by a common bonding pad, and wherein the common bonding pad spans an intermediate space between the semiconductor layer sequences.

20 . The luminescence diode according to claim 15 , wherein the first semiconductor layer sequence and the second semiconductor layer sequence are connected in parallel.

21 . The luminescence diode according to claim 15 , wherein both the first semiconductor layer sequence and the second semiconductor layer sequence have an arrangement of microprisms, wherein the microprisms extend into the semiconductor layer sequences starting from a surface of the semiconductor layer sequences which faces the carrier substrate, and wherein a cross-section of the microprisms decreases starting from the surface.

22 . A method for producing a luminescence diode for an infrared spectral region, the method comprising:
growing a first semiconductor layer sequence comprising a first active layer suitable for emitting radiation having a first dominant wavelength λ dom1 onto a growth substrate; growing a second semiconductor layer sequence comprising a second active layer suitable for emitting radiation having a second dominant wavelength λ dom2 over the first semiconductor layer sequence; removing the second semiconductor layer sequence in a first region; connecting the semiconductor layer sequences to a carrier substrate on a side facing away from the growth substrate; removing the growth substrate; and removing the first semiconductor layer sequence in a second region which is laterally offset from the first region.

23 . The method according to claim 22 , further comprising applying an etch stop layer to the first semiconductor layer sequence before growing the second semiconductor layer sequence.

24 . The method according to claim 23 , wherein the first semiconductor layer sequence and the second semiconductor layer sequence are each based on an arsenide compound semiconductor material, and wherein the etch stop layer comprises a phosphide compound semiconductor material.

25 . The method according to claim 22 , further comprising producing an arrangement of microprisms both in the first semiconductor layer sequence and in the second semiconductor layer sequence before the semiconductor layer sequences are connected to the carrier substrate, wherein each microprisms extends into the semiconductor layer sequences starting from a surface of the semiconductor layer sequences facing away from the growth substrate, and wherein a cross-section of the microprisms decreases starting from the surface.

26 . The method according to claim 22 , further comprising thinning the growth substrate prior to bonding to the carrier substrate.

27 . The method according to claim 26 , wherein the growth substrate is thinned by mechanical ablation, and wherein the growth substrate is removed by an etching process after the semiconductor layer sequences have been bonded to the carrier substrate.

28 . The method according to claim 26 , wherein a thickness of the growth substrate after thinning is not more than 260 μm.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Rupprich Christoph
• Rudolph Andreas
• Halbritter Hubert

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H01L33/24

  Electricity · mapped topic

• H01L33/0079

  Electricity · mapped topic

• H01L2933/0066

  Electricity · mapped topic

• H01L33/0062

  Electricity · mapped topic