Oxygen generating electrode, oxygen generating electrode device, and photoelectric converter

Patent metadata

Field	Value
Publication number	US-2020111619-A1
Application number	US-201916590677-A
Country	US
Kind code	A1
Filing date	Oct 2, 2019
Priority date	Oct 5, 2018
Publication date	Apr 9, 2020
Grant date	—

Abstract

An oxygen generating electrode includes a conductive layer; a photocatalyst layer; and a light absorption. The light-absorbing layer arranged between the conductive layer and the photocatalyst layer. The light-absorbing layer is formed of one or a plurality of perovskite-type films, and each of the films contains tin (Sn), oxygen (O), sulfur (S), and one or more elements selected from Group 1 or Group 2 of the periodic table of elements. Each of the films formed by doping S for substituting an O site is set so that a band gap takes a predetermined value in a range between 0 eV to 4 eV.

First claim

What is claimed is:

1 . An apparatus comprising:
a conductive layer; a photocatalyst layer; and a light-absorbing layer arranged between the conductive layer and the photocatalyst layer, wherein the light-absorption layer is formed of one or a plurality of perovskite-type films (films), and each of the films contains tin (Sn), oxygen (O), sulfur (S), and one or more elements selected from Group 1 or Group 2 of the periodic table of elements, and each of the films formed by doping S for substituting an O site is set so that a band gap takes a predetermined value in a range between 0 eV to 4 eV.

2 . The apparatus according to claim 1 ,
wherein the light-absorbing layer has a multi-layered structure of the films, the plurality of the films are formed of a same material, and an amount of the doping S differs between each of the films.

3 . The apparatus according to claim 2 ,
wherein the plurality of films are arranged so that the amount of the doping S increases in order from a side where light is incident.

4 . The apparatus according to claim 1 ,
wherein the one or more elements selected from Group 1 or Group 2 of the periodic table include Ba, Sr, and K.

5 . The apparatus according to claim 1 ,
wherein a composition of a film of the light-absorbing layer is BaSnS x O 3-x , and the doping S at % is set in a range between 0<x<25.

6 . The apparatus according to claim 1 ,
wherein a composition of a film of the light-absorbing layer is SrSnS x O 3-x , and the doping S at % is set in a range between 0<x<30.

7 . The apparatus according to claim 1 ,
wherein a composition of a film of the light-absorbing layer is Ba 1-y K y SnS x O 3-x , and 0<x<0.25 and 0<y<0.05 are satisfied.

8 . The apparatus according to claim 1 ,
wherein a composition of a film of the light-absorbing layer is Ba 1-y K y SrS x O 3-x , and 0<x<0.3 and 0<y<0.05 are satisfied.

9 . The apparatus according to claim 1 ,
wherein the conductive layer contains Sn and O, and is a degenerately doped perovskite-type layer.

10 . The apparatus according to claim 9 ,
wherein the conductive layer is an n-type conductive layer to which La is added.

11 . The apparatus according to claim 1 , further comprising:
a substrate for supporting a stacked body of the conductive layer, the light-absorbing layer, and the photocatalyst layer, wherein the substrate is selected from Ba 1-z La z SnO 3 , BaSn 1-z Sb z O 3 , Sr 1-z La z SnO 3 , and SrSn 1-z Sb z O 3 .

12 . An apparatus comprising;
a first wiring; a second wiring; a conductive layer connected to the first wiring; a photocatalyst layer coupled to the second wiring; and a light-absorbing layer arranged between the conductive layer and the photocatalyst layer, wherein the light-absorption layer is formed of one or a plurality of perovskite-type films, and each of the films contains tin (Sn), oxygen (O), sulfur (S), and one or more elements selected from Group 1 or Group 2 of the periodic table of elements, and each of the films formed by doping S for substituting an O site is set so that a band gap takes a predetermined value in a range between 0 eV to 4 eV.

13 . An oxygen generating device comprising:
an oxygen generating electrode including:
a conductive layer,
a photocatalyst layer, and
a light-absorbing layer arranged between the conductive layer and the photocatalyst layer,
wherein the light-absorption layer is formed of one or a plurality of perovskite-type films, and each of the films contains tin (Sn), oxygen (O), sulfur (S), and one or more elements selected from Group 1 or Group 2 of the periodic table of elements, and each of the films formed by doping S for substituting an O site is set so that a band gap takes a predetermined value in a range between 0 eV to 4 eV; a counter electrode provided at a position facing the oxygen generating electrode; and an electrolyte solution filled between the oxygen generating electrode and the counter electrode.

14 . The oxygen generating device according to claim 13 ,
wherein the light-absorbing layer has a multi-layered structure of the films, the plurality of the films are formed of the same material, and the doping S differs between the films.

15 . The oxygen generating device according to claim 13 ,
wherein the plurality of films are arranged so that the doping S increases in order from a side where light is incident.

16 . The oxygen generating device according to claim 13 ,
wherein the one or more elements selected from Group 1 or Group 2 of the periodic table of elements include Ba, Sr, and K.

17 . The oxygen generating device according to claim 13 ,
wherein a composition of the film of the light-absorbing layer is BaSnS x O 3-x , and the doping S at % is set in a range between 0<x<25.

18 . The oxygen generating device according to claim 13 ,
wherein a composition of the film of the light-absorbing layer is SrSnS x O 3-x , and the doping S at % is set in a range between 0<x<30.

19 . The oxygen generating device according to claim 13 , further comprising:
a substrate for supporting a stacked body of the conductive layer, the light-absorbing layer, and the photocatalyst layer, wherein the substrate is selected from Ba 1-z La z SnO 3 , BaSn 1-z Sb z O 3 , Sr 1-z La z SnO 3 , and SrSn 1-z Sb z O 3 .

Assignees

• Fujitsu Ltd

Inventors

• Baniecki John David
• Aso Hiroyuki
• Imanaka Yoshihiko

Classifications

• H01G9/209

  Light trapping arrangements · CPC title

• H01G9/2045

  comprising a semiconductor electrode comprising elements of the fourth group of the Periodic Table with or without impurities, e.g. doping materials · CPC title

• H01G9/2027 Primary

  comprising an oxide semiconductor electrode · CPC title

• Y02P20/133

  Renewable energy sources, e.g. sunlight · CPC title

• C25B1/04

  by electrolysis of water · CPC title