Heterojunction perovskite solar cell with high stabilized efficiency and low voltage loss

Patent metadata

Field	Value
Publication number	US-2020105481-A1
Application number	US-201916590315-A
Country	US
Kind code	A1
Filing date	Oct 1, 2019
Priority date	Oct 1, 2018
Publication date	Apr 2, 2020
Grant date	—

Abstract

A photovoltaic device and method of manufacturing the device are described.

First claim

What is claimed is:

1 . A method of manufacturing a photovoltaic device structure comprising:
coating a perovskite precursor in a solvent on a semiconductor substrate, the precursor forming a layer on surface of the semiconductor substrate.

2 . The method of claim 1 , wherein the layer is a 2D perovskite layer.

3 . The method of claim 1 , wherein the semiconductor includes a 3D perovskite on an electrode layer.

4 . The method of claim 1 , wherein the precursor includes a C2-C16 alkyl ammonium halide.

5 . The method of claim 4 , wherein the C2-C16 alkyl ammonium is a C4 alkyl ammonium, C5 alkyl ammonium, C6 alkyl ammonium, C7 alkyl ammonium, C8 alkyl ammonium, C10 alkyl ammonium, C12 alkyl ammonium, C14 alkyl ammonium, or C16 alkyl ammonium.

6 . The method of claim 4 , wherein the halide is a bromide or iodide.

7 . The method of claim 1 , wherein the perovskite precursor includes a lead iodide.

8 . The method of claim 1 , wherein the solvent is chloroform.

9 . The method of claim 1 , wherein coating includes spin-coating, ink-jet printing, roll-to-roll printing, or blade coating.

10 . The method of claim 1 , wherein the C2-C16 alkyl ammonium is n-Butylammonium bromide (C 4 Br), n-Hexylammonium bromide (C 6 Br), or n-Octylammonium bromide (C 8 Br), the solvent is chloroform and the 2D perovskite is lead iodide.

11 . The method of claim 1 , wherein coating includes spin coating at a rate between 2000 and 6000 rpm.

12 . A photovoltaic device comprising:
a hole transport layer adjacent to a first electrode; an electron transport layer adjacent to a second electrode; a perovskite layer between the hole transport layer and the electron transport layer; and a passivating layer between the perovskite layer and the hole transporting layer.

13 . The device of claim 12 , wherein the passivating layer includes a 2D perovskite layer.

14 . The device of claim 13 , wherein the 2D perovskite layer includes a C2-C16 alkyl ammonium group.

15 . The device of claim 12 , wherein the device is made by a method of any of claims 1 - 10 .

16 . The device of claim 12 , wherein the device has a power conversion efficiency of over 23%.

17 . The device of claim 12 , wherein the perovskite layer includes a material having the formula (I)
A′(Pb:B′)X 3   (I)
where A′ is an organic or large inorganic cation, B′ is a divalent metal cation or missing, and X is a halide ion.

18 . The device of claim 17 , wherein the large inorganic cation is a C2-C16 alkyl ammonium halide.

Assignees

• Massachusetts Inst Technology

Inventors

• Bawendi Moungi G
• Yoo Jason
• Shin Seongsik

Classifications

• H01G9/0036

  Formation of the solid electrolyte layer · CPC title

• H01G9/2018

  characterised by the ionic charge transport species, e.g. redox shuttles · CPC title

• H01L51/441

  Electricity · mapped topic

• H01L51/4253

  Electricity · mapped topic

• H01G9/2009 Primary

  Solid electrolytes · CPC title