Semiconductor module

US2020066697A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2020066697-A1
Application numberUS-201916405019-A
CountryUS
Kind codeA1
Filing dateMay 7, 2019
Priority dateAug 24, 2018
Publication dateFeb 27, 2020
Grant date

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A semiconductor module includes: a semiconductor package in which a semiconductor device is incorporated; a snubber circuit having a snubber capacitor and a snubber resistor which are connected in parallel to the semiconductor device; a first light-emitting device emitting light when residual voltage between an anode and a cathode of the semiconductor device becomes equal to or higher than first voltage; and a second light-emitting device emitting light when the residual voltage becomes equal to or higher than second voltage, wherein the first and second voltages are different from each other.

First claim

Opening claim text (preview).

1 . A semiconductor module comprising: a semiconductor package in which a semiconductor device is incorporated; a snubber circuit having a snubber capacitor and a snubber resistor which are connected in parallel to the semiconductor device; a first light-emitting device emitting light when residual voltage between an anode and a cathode of the semiconductor device becomes equal to or higher than first voltage; and a second light-emitting device emitting light when the residual voltage becomes equal to or higher than second voltage, wherein the first and second voltages are different from each other. 2 . The semiconductor module according to claim 1 , wherein the first voltage is set in a range from not less than 1000 V to less than 4500 V, and the second voltage is set in a range from not less than 100 V to less than 1000 V. 3 . The semiconductor module according to claim 1 , wherein the snubber circuit is configured to be detachable from the semiconductor package. 4 . The semiconductor module according to claim 1 , wherein at least one of the first and second light-emitting devices is configured to be detachable from the semiconductor package. 5 . The semiconductor module according to claim 1 , further comprising a substrate on which the snubber circuit and the first and second light emitting devices are mounted, wherein the substrate is configured to be detachable from the semiconductor package. 6 . The semiconductor module according to claim 1 , wherein the snubber circuit and the first and second light emitting devices are incorporated in the semiconductor package, and light emitting portions of the first and second light emitting devices are exposed from the semiconductor package. 7 . The semiconductor module according to claim 1 , wherein the semiconductor device is made of a wide-band-gap semiconductor. 8 . A semiconductor module comprising: a semiconductor package in which a semiconductor device is incorporated; a snubber circuit having a snubber capacitor and a snubber resistor which are connected in parallel to the semiconductor device; and a light-emitting device exposed from the semiconductor package and emitting light according to a residual voltage between an anode and a cathode of the semiconductor device, wherein the semiconductor device incorporated in the semiconductor package includes only one switching device and one diode connected in anti-parallel to the switching device. 9 . The semiconductor module according to claim 8 , wherein the semiconductor device is made of a wide-band-gap semiconductor.

Assignees

Inventors

Classifications

  • H10W90/00Primary

    Package configurations · CPC title

  • Electricity · mapped topic

  • Electricity · mapped topic

  • H01L25/167Primary

    Electricity · mapped topic

  • Capacitors having no potential barriers · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US2020066697A1 cover?
A semiconductor module includes: a semiconductor package in which a semiconductor device is incorporated; a snubber circuit having a snubber capacitor and a snubber resistor which are connected in parallel to the semiconductor device; a first light-emitting device emitting light when residual voltage between an anode and a cathode of the semiconductor device becomes equal to or higher than firs…
Who is the assignee on this patent?
Mitsubishi Electric Corp
What technology area does this patent fall under?
Primary CPC classification H10W90/00. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Feb 27 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).