Display device and electronic device including the same

Patent metadata

Field	Value
Publication number	US-2020052004-A1
Application number	US-201916653007-A
Country	US
Kind code	A1
Filing date	Oct 15, 2019
Priority date	Dec 4, 2009
Publication date	Feb 13, 2020
Grant date	—

Abstract

One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor.

First claim

1 . (canceled)

2 . A semiconductor device comprising:
an insulating film; and a single crystalline oxide semiconductor film processed into a predetermined shape over the insulating film.

3 . The semiconductor device according to claim 2 ,
wherein the single crystalline oxide semiconductor film is an island-shaped single crystalline oxide semiconductor film.

4 . The semiconductor device according to claim 2 , further comprising a substrate,
wherein the insulating film is provided over the substrate.

5 . The semiconductor device according to claim 2 ,
wherein the single crystalline oxide semiconductor film comprises In, Ga, and Zn.

6 . A semiconductor device comprising:
a single crystalline oxide semiconductor film processed into a predetermined shape, wherein the single crystalline oxide semiconductor film comprises In, Ga, and Zn.

7 . The semiconductor device according to claim 6 ,
wherein the single crystalline oxide semiconductor film is an island-shaped single crystalline oxide semiconductor film.

8 . The semiconductor device according to claim 6 , further comprising an insulating film over a substrate,
wherein the single crystalline oxide semiconductor film is provided over the insulating film.

9 . A method for manufacturing a semiconductor device comprising the steps of:
forming an insulating film; forming a single crystalline oxide semiconductor film over the insulating film; and processing the single crystalline oxide semiconductor film into a predetermined shape.

10 . The method for manufacturing a semiconductor device according to claim 9 ,
wherein the single crystalline oxide semiconductor film is processed into an island-shaped single crystalline oxide semiconductor film.

11 . The method for manufacturing a semiconductor device according to claim 9 ,
wherein the insulating film is formed over a substrate.

12 . The method for manufacturing a semiconductor device according to claim 9 ,
wherein the single crystalline oxide semiconductor film comprises In, Ga, and Zn.

13 . A method for manufacturing a semiconductor device comprising the steps of:
forming a single crystalline oxide semiconductor film comprising In, Ga, and Zn, and processing the single crystalline oxide semiconductor film into a predetermined shape.

14 . The method for manufacturing a semiconductor device according to claim 13 ,
wherein the single crystalline oxide semiconductor film is processed into an island-shaped single crystalline oxide semiconductor film.

15 . The method for manufacturing a semiconductor device according to claim 9 , further comprising a step of forming an insulating film over a substrate,
wherein the single crystalline oxide semiconductor film is formed over the insulating film.

Assignees

• Semiconductor Energy Lab

Inventors

• Koyama Jun
• Yamazaki Shunpei

Classifications

• G09G2330/023

  using energy recovery or conservation · CPC title

• G09G2300/0426

  Layout of electrodes and connections · CPC title

• G09G3/3275

  Details of drivers for data electrodes · CPC title

• G09G3/3677

  suitable for active matrices only · CPC title

• G09G2310/0286

  Details of a shift registers arranged for use in a driving circuit · CPC title