Solid-state imaging device and electronic apparatus

Patent metadata

Field	Value
Publication number	US-2020021763-A1
Application number	US-201916585976-A
Country	US
Kind code	A1
Filing date	Sep 27, 2019
Priority date	Nov 5, 2015
Publication date	Jan 16, 2020
Grant date	—

Abstract

Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.

First claim

1 . An imaging device, comprising:
a first pixel of a first pixel, wherein the first pixel is for phase difference detection, the first pixel including: a first electrode; a first portion of a photoelectric conversion film; and a first portion of a second electrode, wherein the first portion of the photoelectric conversion film is between the first electrode and the first portion of the second electrode, and wherein the first electrode of the first pixel has a first area in a plan view; and
a second pixel of a second pixel, wherein the second pixel is for imaging, the second pixel including:
a first electrode;
a second portion of the photoelectric conversion film; and
a second portion of the second electrode, wherein the second portion of the photoelectric conversion film is between the first electrode and the second portion of the second electrode, wherein the first electrode of the second pixel has a second area in a plan view, and wherein the first area is larger than the second area.

2 . The imaging device of claim 1 , further comprising:
a light shielding film, wherein the light shielding film is adjacent at least a portion of the first electrode of the first pixel.

3 . The imaging device of claim 2 , further comprising:
an interlayer insulating film, wherein at least a portion of the interlayer insulating film is between the light shielding film and the first electrode of the first pixel.

4 . The imaging device of claim 1 , further comprising:
a first charge accumulation unit, wherein the first electrode of the first pixel is connected to the first charge accumulation unit; a second charge accumulation unit, wherein the first electrode of the second pixel is connected to the second charge accumulation unit.

5 . The imaging device of claim 4 , wherein the first electrode of the first pixel and the first electrode of the second pixel are lower electrodes, and wherein the first portion of the second electrode of the first pixel and the second portion of the second electrode of the second pixel are upper electrodes.

6 . The imaging device of claim 1 , wherein the first electrode of the first pixel is divided into a first portion and a second portion, wherein the first portion of the first electrode is separated from the second portion of the first electrode.

7 . The imaging device of claim 6 , further comprising:
a first charge accumulation unit, wherein the first portion of the first electrode of the first pixel is connected to the first charge accumulation unit.

8 . The imaging device of claim 7 , wherein the second portion of the first electrode of the first pixel is connected to ground.

9 . The imaging device of claim 6 , further comprising:
an interpixel electrode, wherein the interpixel electrode encloses the first and second pixels, and wherein the second portion of the first electrode of the first pixel is connected to the interpixel electrode.

10 . The imaging device of claim 6 , wherein the first portion of the first electrode of the first pixel is electrically separated from the second portion of the first electrode of the first pixel.

11 . An imaging device, comprising:
a first pixel of a first pixel, including: a first electrode, wherein the first electrode is divided into a first portion and a second portion, wherein the first portion of the electrode is separated from the second portion of the first electrode; a first portion of a photoelectric conversion film; and a first portion of a second electrode, wherein the first portion of the photoelectric conversion film is between the first electrode and the first portion of the second electrode, and wherein the first electrode of the first pixel has a first area in a plan view; and
a second pixel of a second pixel, including:
a first electrode;
a second portion of the photoelectric conversion film; and
a second portion of the second electrode, wherein the second portion of the photoelectric conversion film is between the first electrode and the second portion of the second electrode, wherein the first electrode of the second pixel has a second area in a plan view, and wherein the first area is larger than the second area.

12 . The imaging device of claim 11 , wherein the first portion of the first electrode is separated from the second portion of the second electrode by a separating section, and wherein the first area of the first electrode of the first pixel includes the first portion of the first electrode, the second portion of the first electrode, and the separating section.

13 . The imaging device of claim 12 , wherein an area of the first portion of the first electrode of the first pixel is different than an area of the second portion of the first electrode of the first pixel.

14 . The imaging device of claim 11 , further comprising:
a first charge accumulation unit, wherein the first portion of the first electrode of the first pixel is connected to the first charge accumulation unit.

15 . The imaging device of claim 14 , wherein
the second portion of the first electrode of the first pixel is connected to ground.

16 . The imaging device of claim 15 , wherein an area of the first portion of the first electrode of the first pixel is smaller than an area of the second portion of the first electrode of the first pixel.

17 . The imaging device of claim 11 , further comprising:
an interpixel electrode, wherein the interpixel electrode encloses the first and second pixels, and wherein the second portion of the first electrode of the first pixel is connected to the interpixel electrode.

18 . The imaging device of claim 17 , wherein the second portion of the first electrode of the first pixel is connected to the interpixel electrode by an electrode extending portion that is integral to and formed from a same material as the second portion of the first electrode of the first pixel and the interpixel electrode.

19 . The imaging device of claim 11 , wherein the first pixel is a phase difference pixel, and wherein the second pixel is an imaging pixel.

20 . An electronic apparatus, comprising:
an optical unit; a solid-state imaging device that receives light from the optical unit, the solid-state imaging device including: a plurality of pixels of a first pixel, each pixel of the first pixel including:
a first electrode;
a first portion of a photoelectric conversion film; and
a first portion of a second electrode, wherein the first portion of the photoelectric conversion film is between the first electrode and the first portion of the second electrode, and wherein the first electrode has a first area in a plan view; and
a plurality of pixels of a second pixel, each pixel of the second pixel including:
a first electrode;
a second portion of the photoelectric conversion film; and
a second portion of the second electrode, wherein the second portion of the photoelectric conversion film is between the first electrode and the second portion of the second electrode, wherein the first electrode has a second area in a plan view, and wherein the first area is larger than the second area;
a control circuit, wherein the control circuit outputs a drive signal that controls operation of the solid-state imaging device; and
a signal processing circuit, wherein the signal processing circuit receives pixel signals from the solid-state imaging device.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Hatano Keisuke
• Nakamura Ryosuke
• Uesugi Yuji
• Koga Fumihiko
• Yamaguchi Tetsuji

Classifications

• H04N25/704 Primary

  Pixels specially adapted for focusing, e.g. phase difference pixel sets · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H01L27/14632

  Electricity · mapped topic

• H01L27/14623

  Electricity · mapped topic

• H04N5/374

  Electricity · mapped topic