Power Semiconductor Circuit

Patent metadata

Field	Value
Publication number	US-2020021207-A1
Application number	US-201816483412-A
Country	US
Kind code	A1
Filing date	Jan 9, 2018
Priority date	Feb 3, 2017
Publication date	Jan 16, 2020
Grant date	—

Abstract

Various embodiments include a power semiconductor circuit comprising: two DC voltage terminals; a half-bridge connected between the DC voltage terminals, the half-bridge including two series-connected switchgear units; an AC voltage terminal associated with the half-bridge; a gate-driver circuit associated with each of the switchgear units; a commutation capacitor parallel to the half-bridge; a module controller; and a meter for determining the current to the AC voltage terminal. Each switchgear unit comprises a respective power semiconductor switch or a plurality of parallel-connected power semiconductor switches. The half-bridge, the commutation capacitor, and the gate-driver circuit are arranged on a common homogeneous circuit carrier.

First claim

What is claimed is:

1 . A power semiconductor circuit comprising:
two DC voltage terminals; a half-bridge connected between the DC voltage terminals, the half-bridge including two series-connected switchgear units; wherein each switchgear unit comprises a respective power semiconductor switch or a plurality of parallel-connected power semiconductor switches; an AC voltage terminal associated with the half-bridge; a gate-driver circuit associated with each of the switchgear units; a commutation capacitor parallel to the half-bridge; a module controller; and meter for determining the current to the AC voltage terminal; wherein the half-bridge, the commutation capacitor, and the gate-driver circuit are arranged on a common homogeneous circuit carrier.

2 . The power semiconductor circuit as claimed in claim 1 , comprising precisely one half-bridge.

3 . The power semiconductor circuit as claimed in claim 1 , comprising precisely two parallel-connected half-bridges.

4 . The power semiconductor circuit as claimed in claim 1 , comprising precisely three half-bridges.

5 . The power semiconductor circuit as claimed in claim 1 , wherein the commutation capacitor has a capacitance of at most 10 μF.

6 . The power semiconductor circuit as claimed in claim 1 , further comprising a meter for measuring a voltage across the commutation capacitor.

7 . The power semiconductor circuit as claimed in claim 1 , further comprising thermometer.

8 . The power semiconductor circuit as claimed in claim 1 , wherein the commutation capacitor and the half-bridge or half-bridges are constructed as a commutation cell.

9 . The power semiconductor circuit as claimed in claim 1 , further comprising an inductor between the center point of each half-bridge and the AC voltage terminal.

10 . The power semiconductor circuit as claimed in claim 1 , further comprising a second AC voltage terminal.

11 . The power semiconductor circuit as claimed in claim 10 , further comprising a filter capacitor between the AC voltage terminal and the second AC voltage terminal.

12 . The power semiconductor circuit as claimed in claim 1 , wherein the power semiconductor switches are formed by IGBTs or MOSFETs.

13 . The power semiconductor circuit as claimed in claim 1 , wherein the power semiconductor switches are formed by wide-bandgap semiconductor switches.

14 . The power semiconductor circuit as claimed in claim 1 , wherein the module controller carries out pulse-width modulation of the half-bridge with a phase and/or output frequency which can be externally specified to the module controller via an interface.

15 . The power semiconductor circuit as claimed in claim 1 , wherein the module controller includes a serial interface for communication.

Assignees

• Siemens Ag

Inventors

• Donat Albrecht
• Heinemann Gerhard
• Ibach Frank
• Imrich Franz
• Lorz Roland
• Weidauer Jens
• Jungwirth Thomas
• Namyslo Lutz

Classifications

• H02M7/5387

  in a bridge configuration · CPC title

• H02M7/003

  Constructional details, e.g. physical layout, assembly, wiring or busbar connections · CPC title

• H02M7/53871 Primary

  with automatic control of output voltage or current · CPC title

• H03K17/6871 Primary

  the output circuit comprising more than one controlled field-effect transistor · CPC title

• H02M1/088

  for the simultaneous control of series or parallel connected semiconductor devices · CPC title