Display apparatus and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-2020006451-A1
Application number	US-201916358020-A
Country	US
Kind code	A1
Filing date	Mar 19, 2019
Priority date	Jul 2, 2018
Publication date	Jan 2, 2020
Grant date	—

Abstract

A display apparatus includes a substrate, a first thin-film transistor including a first semiconductor layer on the substrate, and a first gate electrode on the first semiconductor layer, the first gate electrode being insulated from the first semiconductor layer by a first gate insulating layer, an organic interlayer insulating layer covering the first gate electrode, a first conductive layer on the organic interlayer insulating layer, a first contact hole exposing a top portion of the first semiconductor layer by penetrating through the organic interlayer insulating layer and the first gate insulating layer, and a first protruding portion protruding from a top surface of the substrate between the substrate and the first semiconductor layer, the first protruding portion corresponding to the first contact hole, wherein the first conductive layer contacts the first semiconductor layer through the first contact hole.

First claim

What is claimed is:

1 . A display apparatus, comprising:
a substrate; a first thin-film transistor including a first semiconductor layer on the substrate, and a first gate electrode on the first semiconductor layer, the first gate electrode being insulated from the first semiconductor layer by a first gate insulating layer; an organic interlayer insulating layer covering the first gate electrode; a first conductive layer on the organic interlayer insulating layer; a first contact hole exposing a top portion of the first semiconductor layer by penetrating through the organic interlayer insulating layer and the first gate insulating layer; and a first protruding portion protruding from a top surface of the substrate between the substrate and the first semiconductor layer, the first protruding portion corresponding to the first contact hole, wherein the first conductive layer contacts the first semiconductor layer through the first contact hole.

2 . The display apparatus as claimed in claim 1 , further comprising:
a storage capacitor including a lower electrode spaced apart from the first gate electrode on a same layer, and an upper electrode overlapping the lower electrode, the upper electrode being insulated from the lower electrode by a second gate insulating layer; a second contact hole exposing a top portion of the lower electrode by penetrating through the organic interlayer insulating layer and the second gate insulating layer; a second conductive layer on the organic interlayer insulating layer, the second conductive layer contacting the lower electrode through the second contact hole; and a second protruding portion protruding from the top surface of the substrate between the substrate and the first semiconductor layer, the second protruding portion corresponding to the second contact hole.

3 . The display apparatus as claimed in claim 2 , wherein:
the upper electrode includes a storage opening embedded in the second contact hole, the second conductive layer passing through the storage opening, and the first conductive layer and the second conductive layer are connected to each other on the organic interlayer insulating layer.

4 . The display apparatus as claimed in claim 2 . further comprising a second thin-film transistor overlapping the storage capacitor.

5 . The display apparatus as claimed in claim 1 , wherein:
the first protruding portion includes an organic material, and a shape of a top portion of the first protruding portion is curved.

6 . The display apparatus as claimed in claim 1 , wherein the first protruding portion includes at least one of an inorganic insulating material and a metal.

7 . The display apparatus as claimed in claim 1 , wherein a top portion of the organic interlayer insulating layer is flat.

8 . The display apparatus as claimed in claim 1 , wherein the organic interlayer insulating layer includes a photosensitive organic layer.

9 . The display apparatus as claimed in claim 1 , further comprising a buffer layer on the substrate,
wherein the first protruding portion is between the buffer layer and the first semiconductor layer.

10 . The display apparatus as claimed in claim 1 , wherein:
the substrate includes a first resin layer, a first barrier layer, a second resin layer, and a second barrier layer, which are stacked sequentially on each other, the first and second resin layers include an organic material, and the first and second barrier layers include an inorganic material.

11 . A display apparatus, comprising:
a substrate; a thin-film transistor on the substrate, the thin-film transistor including a semiconductor layer and a gate electrode; a storage capacitor on the substrate; an organic interlayer insulating layer covering the gate electrode and the storage capacitor; a conductive layer on the organic interlayer insulating layer; a contact hole penetrating through the organic interlayer insulating layer and exposing the semiconductor layer or one electrode of the storage capacitor; and a protruding portion between the substrate and the organic interlayer insulating layer, the protruding portion corresponding to the contact hole, wherein a portion of the conductive layer is embedded in the contact hole and contacts the semiconductor layer or the storage capacitor.

12 . The display apparatus as claimed in claim 11 , wherein a top surface of the organic interlayer insulating layer is flat.

13 . The display apparatus as claimed in claim 11 , wherein the organic interlayer insulating layer includes a photosensitive organic material.

14 . The display apparatus as claimed in claim 11 , wherein:
the protruding portion includes an organic material, and a shape of a top portion of the protruding portion is curved.

15 . The display apparatus as claimed in claim 11 , wherein the protruding portion includes at least one of an inorganic insulating material and a metal.

16 . A method of manufacturing a display apparatus that includes a thin-film transistor that includes a semiconductor layer and a gate electrode, the method comprising:
forming at least one protruding portion at a pre-set location on a substrate; forming the semiconductor layer such that at least a portion of the semiconductor layer is provided on the at least one protruding portion; forming a first gate insulating layer to cover the semiconductor layer on the substrate; forming the gate electrode on the first gate insulating layer such that the gate electrode overlaps the semiconductor layer; forming an organic interlayer insulating layer to cover the gate electrode on the substrate; and forming an organic contact hole penetrating through the organic interlayer insulating layer to correspond to the at least one protruding portion.

17 . The method as claimed in claim 16 , wherein:
the organic interlayer insulating layer includes a photosensitive organic material, and the organic contact hole is formed on the organic interlayer insulating layer through an exposure process and a developing process.

18 . The method as claimed in claim 16 , further comprising:
forming a second gate insulating layer to be below the organic interlayer insulating layer and to cover the gate electrode; and forming an inorganic contact hole communicating with the organic contact hole on the second gate insulating layer, wherein the inorganic contact hole is formed using the organic interlayer insulating layer as a blocking member.

19 . The method as claimed in claim 16 , wherein:
the at least one protruding portion includes an organic material, and a shape of a top portion of the at least one protruding portion is curved.

20 . The method as claimed in claim 16 , wherein the at least one protruding portion includes at least one of an inorganic insulating material and a metal.

Assignees

• Samsung Display Co Ltd

Inventors

• Son Sewan
• Ko Moosoon
• Park Youngwoo
• An Jinsung
• Woo Minwoo
• Yoon Juwon
• Lee Seongjun
• Lee Wangwoo
• Lee Jeongsoo
• Lee Jiseon
• Ji Deukmyung

Classifications

• H01L51/56

  Electricity · mapped topic

• H01L27/3246

  Electricity · mapped topic

• H01L27/3258 Primary

  Electricity · mapped topic

• H01L51/5206

  Electricity · mapped topic

• H01L27/3274

  Electricity · mapped topic