Sensor for measuring a gas concentration

Patent metadata

Field	Value
Publication number	US-2020003718-A1
Application number	US-201816493524-A
Country	US
Kind code	A1
Filing date	Mar 29, 2018
Priority date	Mar 31, 2017
Publication date	Jan 2, 2020
Grant date	—

Abstract

Further aspects of the disclosure relate to a corresponding method, a computer program product and an electronic device.

First claim

1 . A sensor for measuring a gas concentration of a target gas in a sample of ambient air, the sensor comprising
a first gas sensitive component comprising a first gas sensitive layer being arranged between a first pair of measuring electrodes, the first gas sensitive layer comprising a metal oxide semiconductor; a second gas sensitive component comprising a second gas sensitive layer being arranged between a second pair of measuring electrodes, the second gas sensitive layer comprising a metal oxide semiconductor; one or more heating elements configured to heat the first gas sensitive layer and the second gas sensitive layer; wherein the first gas sensitive component is configured to measure the gas concentration of the target gas in a first concentration band; and the second gas sensitive component is configured to measure the gas concentration of the target gas in a second concentration band; wherein the sensor is configured to operate for both the measuring of the first concentration band and for the measuring of the second concentration band in a respective transition regime, the transition regime being situated between a perturbation regime and a saturation regime, wherein the transition regime is characterized by a higher sensitivity to the target gas than the perturbation regime and the saturation regime.

2 . The sensor of claim 1 , wherein one or more layer parameters of the first gas sensitive layer and the second gas sensitive layer are configured to operate the sensor for both the measuring of the first concentration band and for the measuring of the second concentration band in the respective transition regime.

3 . The sensor of claim 1 , wherein the slopes of a resistance-concentration curve of the first gas sensitive layer and the slopes of a resistance-concentration curve of the second gas sensitive layer are greater in the transition regime than in the saturation regime and the perturbation regime.

4 . The sensor of claim 1 , wherein the sensor is configured the measure the gas concentration in the first concentration band and in the second concentration band in a continuous manner.

5 . The sensor of claim 1 , wherein
the first gas sensitive component is configured to detect in the first concentration band a first threshold concentration; and the second gas sensitive component is configured to detect in the second concentration band a second threshold concentration.

6 . The sensor of claim 1 , wherein
the first and the second gas sensitive layer comprise an n-doped metal oxide semiconductor material; and the sensor is configured to measure a concentration of an oxidizing target gas.

7 . The sensor of claim 6 , wherein the oxidizing target gas is ozone or nitrogen dioxide.

8 . The sensor of claim 1 , wherein
the first and the second gas sensitive layer comprise a p-doped metal oxide semiconductor material; and the sensor is configured to measure a concentration of a reducing target gas.

9 . The sensor of claim 1 , wherein the first gas sensitive component and the second gas sensitive component differ in at least one layer parameter, the layer parameter being selected from the group consisting of:
a thickness of the first gas sensitive layer and the second gas sensitive layer; the morphology of the first gas sensitive layer and the second gas sensitive layer, in particular the porosity of the first gas sensitive layer and the second gas sensitive layer; the material of the first gas sensitive layer and the second gas sensitive layer, in particular different additives added to the same base material; and a respective operating temperature of the first gas sensitive layer and the second gas sensitive layer.

10 . The sensor of claim 1 , wherein
the first gas sensitive layer has a first thickness and the second gas sensitive layer has a second thickness, the second thickness being different from the first thickness; the first thickness and the second thickness are chosen such that the sensor operates for both the detection of the first threshold concentration and for the detection of the second threshold concentration in a transition regime, the transition regime being situated between a perturbation regime and a saturation regime, wherein the transition regime is characterized by a higher sensitivity to the target gas than the perturbation regime and the saturation regime.

11 . The sensor of claim 2 , wherein the one or more layer parameters are selected from the group consisting of:
a thickness of the first gas sensitive layer and the second gas sensitive layer; the morphology of the first gas sensitive layer and the second gas sensitive layer, in particular the porosity of the first gas sensitive layer and the second gas sensitive layer; the material of the first gas sensitive layer and the second gas sensitive layer, in particular different additives added to the same base material; and a respective operating temperature of the first gas sensitive layer and the second gas sensitive layer.

12 . The sensor of claim 1 , wherein the sensor comprises a first operation mode configured to operate the first gas sensitive component and the second gas sensitive component simultaneously.

13 . The sensor of claim 1 , wherein the sensor comprises a second operation mode configured to operate only the first gas sensitive component or only the second gas sensitive component.

14 . The sensor of claim 1 , wherein the thickness of the first and the second gas sensitive layer is between 100 nm and 5000 nm.

15 . The sensor of claim 1 , wherein the sensor is configured to operate the first and the second gas sensitive component at predefined reactivities.

16 . The sensor of claim 1 , wherein the sensor is configured to provide a fine-tuning of the transition regime via one or more reactivity control parameters, in particular by the operating temperature of the first and the second gas sensitive layer, in particular by selecting a plateau region of a respective resistivity-reactivity curve for the first gas sensitive layer and the second gas sensitive layer.

17 . A method for measuring a gas concentration of a target gas in a sample of ambient air, the method comprising:
providing a first gas sensitive component comprising a first gas sensitive layer being arranged between a first pair of measuring electrodes, the first gas sensitive layer comprising a metal oxide semiconductor; providing a second gas sensitive component comprising a second gas sensitive layer being arranged between a second pair of measuring electrodes, the second gas sensitive layer comprising a metal oxide semiconductor; measuring, by the first gas sensitive component, the gas concentration of the target gas in a first concentration band; and measuring, by the second gas sensitive component, the gas concentration of the target gas in a second concentration band; operating the sensor for both the measuring of the first concentration band and for the measuring of the second concentration band in a respective transition regime, the transition regime being situated between a perturbation regime and a saturation regime, wherein the transition regime is characterized by a higher sensitivity to the target gas than the perturbation regime and the saturation regime.

18 . A computer program product for operating a sensor as claimed in claim 1 , the computer program product comprising a computer readable storage medium having program instructions embodied therewith, the program instructions executable by the sensor to cause the sensor to perform a met

Assignees

• Sensirion Ag

Inventors

• Bartsch Sebastian
• Egli Daniel
• Dumond Patrice

Classifications

• G01N27/125

  Composition of the body, e.g. the composition of its sensitive layer · CPC title

• G01N27/129 Primary

  Diode type sensors, e.g. gas sensitive Schottky diodes (capacitor type sensors G01N27/227; field-effect transistor type sensors G01N27/414) · CPC title

• G01N27/4162

  investigating the composition of gases, by the influence exerted on ionic conductivity in a liquid (conductometry in general G01N27/06; amperometric gas sensors G01N27/404) · CPC title

• G01N27/128 Primary

  Microapparatus · CPC title