Gas sensor and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-2020003717-A1
Application number	US-201916353275-A
Country	US
Kind code	A1
Filing date	Mar 14, 2019
Priority date	Jun 28, 2018
Publication date	Jan 2, 2020
Grant date	—

Abstract

A gas sensor includes a substrate, a thin film metallic glass, an ultrananocrystalline diamond layer and a sensor structure. The thin film metallic glass is formed on the substrate. The ultrananocrystalline diamond layer partially covers the thin film metallic glass. The sensor structure includes a seed layer formed on the ultrananocrystalline diamond layer and a plurality of nanostructures formed on the seed layer.

First claim

What is claimed is:

1 . A gas sensor, comprising:
a substrate; a thin film metallic glass formed on the substrate; an ultrananocrystalline diamond layer partially covering the thin film metallic glass; and a sensor structure, comprising a seed layer formed on the ultrananocrystalline diamond layer and a plurality of nanostructures formed on the seed layer.

2 . The gas sensor of claim 1 , wherein a coverage of the ultrananocrystalline diamond layer on the thin film metallic glass is 50% to 90%.

3 . The gas sensor of claim 1 , wherein the thin film metallic glass comprises a copper-based thin film metallic glass or a silver-based thin film metallic glass.

4 . The gas sensor of claim 1 , wherein each nanostructure is configured as a zinc oxide nanotube or a zinc oxide nanorod.

5 . The gas sensor of claim 1 , further comprising an electrode layer formed on the sensor structure.

6 . The gas sensor of claim 1 , wherein the gas sensor is capable of sensing a gas at ambient temperature.

7 . The gas sensor of claim 6 , which is a hydrogen gas sensor, an ammonia sensor, or an acetone sensor.

8 . The gas sensor of claim 6 , wherein when the gas is hydrogen gas, a detectable concentration range of hydrogen gas of the gas sensor is from 10 ppm to 500 ppm, and a sensitivity of the gas sensor is above 34%.

9 . The gas sensor of claim 8 , wherein when the concentration of the hydrogen gas is 100 ppm, a decay in sensitivity of the gas sensor is less than 1% for 60 days.

10 . A method of manufacturing a gas sensor, comprising:
providing a substrate; forming a thin film metallic glass on the substrate; depositing an ultrananocrystalline diamond layer on the thin film metallic glass, wherein the ultrananocrystalline diamond layer partially covers the thin film metallic glass; and forming a sensor structure on the ultrananocrystalline diamond layer.

11 . The method of claim 10 , further comprising: forming an electrode layer on the sensor structure.

12 . The method of claim 10 , wherein a coverage of the ultrananocrystalline diamond layer on the thin film metallic glass is adjustable by controlling a deposition time of the ultrananocrystalline diamond layer.

Assignees

• Univ Nat Taiwan Science & Technology

Inventors

• Chu Jinn P
• Huang Bohr-Ran
• Yenesew Markos Mehretie

Classifications

• H10P14/3464

  Nanotubes · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/3206

  Carbon, e.g. diamond-like carbon · CPC title

• H10P14/2923

  being conductive materials, e.g. metallic silicides · CPC title

• H10P14/274

  using seed materials · CPC title