Composite sintered body, electrostatic chuck member, and electrostatic chuck device

Patent metadata

Field	Value
Publication number	US-2019385884-A1
Application number	US-201816480264-A
Country	US
Kind code	A1
Filing date	Feb 19, 2018
Priority date	Feb 23, 2017
Publication date	Dec 19, 2019
Grant date	—

Abstract

This composite sintered body is a ceramic composite sintered body which includes aluminum oxide which is a main phase, and silicon carbide which is a sub-phase, the composite sintered body including an interface layer which includes, as a forming material, a material other than the aluminum oxide and the silicon carbide, at an interface between a crystal grain of the aluminum oxide and a crystal grain of the silicon carbide in a grain boundary.

First claim

1 . A composite sintered body which is a ceramic composite sintered body, the composite sintered body comprising:
aluminum oxide which is a main phase; silicon carbide which is a sub-phase; at least one crystal grain of the silicon carbide, which is located between at least two crystal grains of the aluminum oxide; and an interface layer which includes, as a forming material, a material other than the aluminum oxide and the silicon carbide, at a grain boundary between the crystal grain of the aluminum oxide and the crystal grain of the silicon carbide.

2 . The composite sintered body according to claim 1 , wherein a thickness of the interface layer is 0.6 nm or more and 2.5 nm or less.

3 . The composite sintered body according to claim 1 , wherein a volume resistivity value is 5×10 15 Ω·cm or more in an entire range from room temperature to 300° C.

4 . The composite sintered body according to claim 1 , wherein an average crystal grain size of the aluminum oxide is 0.8 μm or more and 1.2 μm or less,
the crystal grains of the silicon carbide are dispersed in the crystal grains of the aluminum oxide and at grain boundaries between the crystal grains of the aluminum oxide, and
the proportion of the number of crystal grains of the silicon carbide dispersed in the crystal grains of the aluminum oxide is 50% or more and 60% or less with respect to the total number of crystal grains of the silicon carbide.

5 . The composite sintered body according to claim 4 , wherein an average crystal grain size of the crystal grains of the silicon carbide dispersed in the crystal grains of the aluminum oxide is smaller than an average crystal grain size of the crystal grains of the silicon carbide dispersed at the crystal grain boundaries of the aluminum oxide.

6 . A composite sintered body which is a ceramic composite sintered body, the composite sintered body comprising:
aluminum oxide which is a main phase; and silicon carbide which is a sub-phase, wherein an average crystal grain size of the aluminum oxide is 0.8 μm or more and 1.2 μm or less, crystal grains of the silicon carbide are dispersed in crystal grains of the aluminum oxide and at grain boundaries between the crystal grains of the aluminum oxide, and a proportion of the number of crystal grains of the silicon carbide dispersed in the crystal grains of the aluminum oxide is 50% or more and 60% or less with respect to the total number of crystal grains of the silicon carbide.

7 . The composite sintered body according to claim 6 , wherein an average crystal grain size of the crystal grains of the silicon carbide dispersed in the crystal grains of the aluminum oxide is smaller than an average crystal grain size of the crystal grains of the silicon carbide dispersed at the crystal grain boundaries of the aluminum oxide.

8 . An electrostatic chuck member comprising:
a base which includes, as a forming material, the composite sintered body according to claim 1 , the base having one principal surface which is a placing surface on which a plate-shaped sample is placed; and an electrostatic attraction electrode provided on a principal surface of the base on a side opposite to the one principal surface of the base, or in an interior of the base.

9 . An electrostatic chuck device comprising:
the electrostatic chuck member according to claim 8 ; and cooling means for cooling the plate-shaped sample placed on the placing surface, wherein a plurality of projection portions supporting the plate-shaped sample are provided on the placing surface, and the cooling means supplies heat transfer gas between the plurality of projection portions.

10 . The composite sintered body according to claim 2 , wherein a volume resistivity value is 5×10 15 Ω·cm or more in an entire range from room temperature to 300° C.

11 . The composite sintered body according to claim 2 , wherein an average crystal grain size of the aluminum oxide is 0.8 μm or more and 1.2 μm or less,
the crystal grains of the silicon carbide are dispersed in the crystal grains of the aluminum oxide and at grain boundaries between the crystal grains of the aluminum oxide, and
the proportion of the number of crystal grains of the silicon carbide dispersed in the crystal grains of the aluminum oxide is 50% or more and 60% or less with respect to the total number of crystal grains of the silicon carbide.

12 . The composite sintered body according to claim 11 , wherein an average crystal grain size of the crystal grains of the silicon carbide dispersed in the crystal grains of the aluminum oxide is smaller than an average crystal grain size of the crystal grains of the silicon carbide dispersed at the crystal grain boundaries of the aluminum oxide.

13 . An electrostatic chuck member comprising:
a base which includes, as a forming material, the composite sintered body according to claim 2 , the base having one principal surface which is a placing surface on which a plate-shaped sample is placed; and an electrostatic attraction electrode provided on a principal surface of the base on a side opposite to the one principal surface of the base, or in an interior of the base.

14 . An electrostatic chuck device comprising:
the electrostatic chuck member according to claim 13 ; and cooling means for cooling the plate-shaped sample placed on the placing surface, wherein a plurality of projection portions supporting the plate-shaped sample are provided on the placing surface, and the cooling means supplies heat transfer gas between the plurality of projection portions.

15 . The composite sintered body according to claim 3 , wherein an average crystal grain size of the aluminum oxide is 0.8 μm or more and 1.2 μm or less,
the crystal grains of the silicon carbide are dispersed in the crystal grains of the aluminum oxide and at grain boundaries between the crystal grains of the aluminum oxide, and
the proportion of the number of crystal grains of the silicon carbide dispersed in the crystal grains of the aluminum oxide is 50% or more and 60% or less with respect to the total number of crystal grains of the silicon carbide.

16 . The composite sintered body according to claim 15 , wherein an average crystal grain size of the crystal grains of the silicon carbide dispersed in the crystal grains of the aluminum oxide is smaller than an average crystal grain size of the crystal grains of the silicon carbide dispersed at the crystal grain boundaries of the aluminum oxide.

17 . An electrostatic chuck member comprising:
a base which includes, as a forming material, the composite sintered body according to claim 3 , the base having one principal surface which is a placing surface on which a plate-shaped sample is placed; and an electrostatic attraction electrode provided on a principal surface of the base on a side opposite to the one principal surface of the base, or in an interior of the base.

18 . An electrostatic chuck device comprising:
the electrostatic chuck member according to claim 17 ; and cooling means for cooling the plate-shaped sample placed on the placing surface, wherein a plurality of projection portions supporting the plate-shaped sample are provided on the placing surface, and the cooling means supplies heat transfer gas between the plurality of projection portions.

19 . An electrostatic chuck member comprising:
a base which includes, as a forming material, the composite sintered body according to claim 6 , the base having one principal surface which is a placing surface on which a plate-shaped

Assignees

• Sumitomo Osaka Cement Co Ltd

Inventors

• Hidaka Nobuhiro
• Kugimoto Hironori

Classifications

• H10P72/0432

  mainly by conduction · CPC title

• H10P72/722 Primary

  Details of electrostatic chucks · CPC title

• C04B2235/6586

  Processes characterised by the flow of gas · CPC title

• C04B2235/72

  Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics · CPC title

• C04B2235/3826

  Silicon carbides · CPC title