Sense Amplifier For A Flash Memory System

Patent metadata

Field	Value
Publication number	US-2019385685-A1
Application number	US-201816117987-A
Country	US
Kind code	A1
Filing date	Aug 30, 2018
Priority date	Jun 15, 2018
Publication date	Dec 19, 2019
Grant date	—

Abstract

An improved low-power sense amplifier for use in a flash memory system is disclosed. The reference bit line and selected bit line are pre-charged during a limited period and with limited power consumed. The pre-charge circuit can be trimmed during a configuration process to further optimize power consumption during the pre-charge operation.

First claim

1 . A flash memory system, comprising:
a read circuit comprising a selected flash memory cell, a first bit line coupled to the selected flash memory cell, a first capacitor, and a first switch, wherein at the beginning of a read operation, the first switch is closed and the first capacitor charges the first bit line and then the first switch is opened and the first bit line discharges through the selected flash memory cell; a reference circuit comprising a reference flash memory cell, a second bit line coupled to the reference flash memory cell, a second capacitor, and a second switch, wherein at the beginning of a read operation, the second switch is closed and the second capacitor charges the second bit line and then the second switch is opened and the second bit line discharges through the reference flash memory cell; and a timing comparison circuit for outputting a first value when the voltage of the first bit line drops below a voltage threshold before the voltage of the second bit line during a read operation and for outputting a second value when the voltage of the second bit line drops below the voltage threshold before the voltage of the first bit line during a read operation, wherein the first value and second value each indicate a value stored in the selected flash memory cell.

2 . The flash memory system of claim 1 , wherein the first capacitor is a variable capacitor and the second capacitor is a variable capacitor.

3 . The flash memory system of claim 1 , wherein the timing comparison circuit comprises a flip-flop.

4 . The flash memory system of claim 2 , wherein the timing comparison circuit comprises a flip-flop.

5 . The flash memory system of claim 1 , wherein the timing comparison circuit comprises an R-S latch.

6 . The flash memory system of claim 2 , wherein the timing comparison circuit comprises an R-S latch.

7 . A flash memory system, comprising:
a read circuit comprising a selected flash memory cell, a first bit line coupled to the selected flash memory cell, a first variable capacitor, and a first switch, wherein at the beginning of a read operation, the first switch is closed and the first variable capacitor charges the first bit line and then the first switch is opened and the first bit line discharges through the selected flash memory cell; a reference circuit comprising a reference flash memory cell, a second bit line coupled to the reference flash memory cell, a second variable capacitor, and a second switch, wherein at the beginning of a sense operation, the second switch is closed and the second variable capacitor charges the second bit line and then the second switch is opened and the second bit line discharges through the reference flash memory cell; a timing comparison circuit for outputting a first value when the voltage of the first bit line drops below a voltage threshold before the voltage of the second bit line during a read operation and for outputting a second value when the voltage of the second bit line drops below the voltage threshold before the voltage of the first bit line during a read operation, wherein the first value and second value each indicate a value stored in the selected flash memory cell; and a trim controller for adjusting the capacitance of the first variable capacitor and the capacitance of the second variable capacitor during a calibration process.

8 . The flash memory system of claim 7 , wherein the trim controller is configured to adjust a voltage source for the reference circuit and the read circuit during the calibration process.

9 . The flash memory system of claim 7 , wherein the timing comparison circuit comprises a flip-flop.

10 . The flash memory system of claim 8 , wherein the timing comparison circuit comprises a flip-flop.

11 . The flash memory system of claim 7 , wherein the timing comparison circuit comprises an R-S latch.

12 . The flash memory system of claim 8 , wherein the timing comparison circuit comprises an R-S latch.

Assignees

• Silicon Storage Tech Inc

Inventors

• Qiang Xiaozhou
• Pi Xiao Yan
• Yue Kai Man
• Bian Li Fang

Classifications

• G11C7/06

  Sense amplifiers; Associated circuits {, e.g. timing or triggering circuits} · CPC title

• G11C16/24 Primary

  Bit-line control circuits · CPC title

• G11C16/0425

  comprising cells containing a merged floating gate and select transistor · CPC title

• G11C16/26

  Sensing or reading circuits; Data output circuits · CPC title

• G11C16/32

  Timing circuits · CPC title