Electro-absorption modulators with stacked waveguide tapers
US-2024085624-A1 · Mar 14, 2024 · US
US2019384003A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019384003-A1 |
| Application number | US-201916530222-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 2, 2019 |
| Priority date | Feb 28, 2014 |
| Publication date | Dec 19, 2019 |
| Grant date | — |
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A spot-size converter includes a first part of a waveguiding structure to couple to a first waveguide to receive light from or transmit light to the first waveguide in a first propagation mode, wherein the first part of the waveguiding structure has a lower waveguiding structure with a varying effective refractive index that decreases away from the first waveguide; and a second part of the waveguiding structure to couple to a second waveguide to transmit light to or receive light from the second waveguide in a second propagation mode, the second part of the waveguiding structure includes an upper waveguiding structure with a plurality of high-index elements arranged therein, an overlap region is between the first part and the second part, the first propagation mode progressively transforms into the second propagation mode in the overlap region.
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What is claimed is: 1 . A spot-size converter comprising: a first part of a waveguiding structure configured to couple to a first waveguide to receive light from or transmit light to the first waveguide in a first propagation mode, wherein the first part of the waveguiding structure has a lower waveguiding structure with a varying effective refractive index that decreases away from the first waveguide; and a second part of the waveguiding structure configured to couple to a second waveguide to transmit light to or receive light from the second waveguide in a second propagation mode, wherein the second part of the waveguiding structure includes an upper waveguiding structure with a plurality of high-index elements arranged therein, wherein an overlap region is located between the first part of the waveguiding structure and the second part of the waveguiding structure, wherein the first propagation mode progressively transforms into the second propagation mode in the overlap region, and wherein the lower waveguiding structure includes a taper in the overlap region. 2 . The spot-size converter of claim 1 , wherein the first waveguide has a spot-size of 0.3-0.7 μm and the second waveguide has a spot size of 5-10 μm. 3 . The spot-size converter of claim 1 , wherein there is a gap between the lower waveguiding structure and one or more of the plurality of high-index elements. 4 . The spot-size converter of claim 1 , wherein the plurality of high-index elements each include a taper outside of the overlap region in the second part of the waveguiding structure. 5 . The spot-size converter of claim 4 , wherein the plurality of high-index elements further linearly spread out from one another to the second waveguide outside of the overlap region in the second part of the waveguiding structure. 6 . The spot-size converter of claim 1 , wherein the second waveguide is SMF-28 fiber. 7 . The spot-size converter of claim 1 , wherein the first waveguide is a semiconductor waveguide and the second waveguide is optical fiber. 8 . The spot-size converter of claim 1 , wherein the first part of the waveguiding structure and the second part of the waveguiding structure form a combined single-mode waveguiding structure along a longitudinal waveguiding axis. 9 . The spot-size converter of claim 1 , wherein the first part of the waveguiding structure and the second part of the waveguiding structure include silicon. 10 . The spot-size converter of claim 1 , wherein the first part of the waveguiding structure is a part of a silicon-on-insulator (SOI) arrangement including a silicon substrate, an insulating layer formed on the silicon substrate, and a silicon layer formed on the insulating layer and patterned to form the first part of waveguiding structure. 11 . A silicon photonic spot-size converter comprising a silicon substrate; an insulating layer formed on the silicon substrate; a silicon core formed on the insulating layer and configured to couple to a first waveguide to receive light from or transmit light to the first waveguide in a first propagation mode, the silicon core being characterized by a longitudinally varying effective refractive index that decreases away from the first waveguide; and a plurality of high-index rods configured to couple to a second waveguide to transmit light to or receive light from the second waveguide in a second propagation mode, wherein an overlap region is located between the first part of the waveguiding structure and the second part of the waveguiding structure, wherein the first propagation mode progressively transforms into the second propagation mode in the overlap region, and wherein the lower waveguiding structure includes a taper in the overlap region. 12 . The silicon photonic spot-size converter of claim 11 , wherein the first waveguide has a spot-size of 0.3-0.7 μm and the second waveguide has a spot size of 5-10 μm. 13 . The silicon photonic spot-size converter of claim 11 , wherein there is a gap between the lower waveguiding structure and one or more of the plurality of high-index elements. 14 . The silicon photonic spot-size converter of claim 11 , wherein the plurality of high-index elements each include a taper outside of the overlap region in the second part of the waveguiding structure. 15 . The silicon photonic spot-size converter of claim 14 , wherein the plurality of high-index elements further linearly spread out from one another to the second waveguide outside of the overlap region in the second part of the waveguiding structure. 16 . The silicon photonic spot-size converter of claim 11 , wherein the second waveguide is SMF-28 fiber. 17 . The silicon photonic spot-size converter of claim 11 , wherein the first waveguide is a semiconductor waveguide and the second waveguide is optical fiber. 18 . The silicon photonic spot-size converter of claim 11 , wherein the first part of the waveguiding structure and the second part of the waveguiding structure form a combined single-mode waveguiding structure along a longitudinal waveguiding axis. 19 . The silicon photonic spot-size converter of claim 11 , wherein the first part of the waveguiding structure and the second part of the waveguiding structure include silicon. 20 . The silicon photonic spot-size converter of claim 11 , wherein the first part of the waveguiding structure is a part of a silicon-on-insulator (SOI) arrangement including a silicon substrate, an insulating layer formed on the silicon substrate, and a silicon layer formed on the insulating layer and patterned to form the first part of waveguiding structure.
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