Sensor and fabrication method thereof
US-2024353525-A1 · Oct 24, 2024 · US
US2019378808A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019378808-A1 |
| Application number | US-201916550402-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 26, 2019 |
| Priority date | Mar 3, 2017 |
| Publication date | Dec 12, 2019 |
| Grant date | — |
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Official abstract text for this publication.
A circuit substrate that includes a substrate having a major surface, a multilayer body on the major surface, and an insulating layer that covers the major surface. The multilayer body includes a first layer and a second layer that overlies the first layer. The first layer is made of a first metal as a main material thereof, and the second layer is made of a second metal as a main material thereof. The second metal has a higher solder wettability than the first metal. As viewed perpendicular to the major surface, the insulating layer is spaced from and surrounds the surface of the second layer so as to define a recess between the multilayer body and the insulating layer.
Opening claim text (preview).
1 . A circuit substrate comprising: a substrate having a major surface; a multilayer body on the major surface, the multilayer body including: a first layer made of a first metal as a main material thereof, and a second layer made of a second metal as a main material thereof, the second layer overlying the first layer, and the second metal having a higher solder wettability than the first metal; an insulating layer on the major surface, the insulating layer surrounding and spaced from a surface of the second layer as viewed perpendicular to the major surface such that a recess is defined between the multilayer body and the insulating layer; and an antioxidant film covering at least a surface of the first layer of the multilayer body. 2 . The circuit substrate according to claim 1 , wherein the first layer is in direct contact with the substrate. 3 . The circuit substrate according to claim 1 , wherein the insulating layer surrounds and is spaced from a side surface of the first layer as viewed perpendicular to the major surface such that the recess is also defined between the first layer and the insulating layer. 4 . The circuit substrate according to claim 1 , wherein the first metal is Cu and the second metal is Au. 5 . The circuit substrate according to claim 1 , wherein each side surface of the first layer is located at a same position as a corresponding side surface of the second layer. 6 . The circuit substrate according to claim 1 , further comprising a third layer defining a bottom of the recess, the third layer made of the first metal as a main material thereof. 7 . The circuit substrate according to claim 6 , wherein the third layer is electrically connected to the multilayer body. 8 . The circuit substrate according to claim 7 , wherein the third layer is integral with the first layer. 9 . The circuit substrate according to claim 6 , wherein the antioxidant film further covers at least a surface of the third layer. 10 . The circuit substrate according to claim 1 , further comprising an intermediate layer between the first layer and the second layer, the intermediate layer having electrical conductivity. 11 . The circuit substrate according to claim 10 , further comprising a third layer defining a bottom of the recess, the third layer made of the first metal as a main material thereof. 12 . The circuit substrate according to claim 11 , wherein the third layer is electrically connected to the multilayer body. 13 . The circuit substrate according to claim 12 , wherein the third layer is integral with the first layer. 14 . The circuit substrate according to claim 11 , wherein the antioxidant film further covers at least a surface of the third layer.
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
Flow barriers · CPC title
Insulating materials thereof · CPC title
Shapes or dispositions of interconnections · CPC title
Soldering or alloying · CPC title
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