Data storage device, operating method of the same, and electronic system including the same

Patent metadata

Field	Value
Publication number	US-2019377518-A1
Application number	US-201916550553-A
Country	US
Kind code	A1
Filing date	Aug 26, 2019
Priority date	Feb 28, 2017
Publication date	Dec 12, 2019
Grant date	—

Abstract

A data storage device, a method of operating the data storage device, and an electronic system including the data storage device are provided. The data storage device includes a controller mounted on a substrate, and a plurality of memory packages configured to be controlled by the controller and to transmit and receive data to and from the controller via M channels (where M is an integer of 1 to 16). When the data storage device is used, a phenomenon in which heat generation is concentrated locally may be mitigated.

First claim

What is claimed is:

1 . A data storage device, comprising:
a controller mounted on a substrate and configured to check whether a write operation transfer condition is satisfied; and a plurality of memory packages comprising M channels, where M is a natural number of 1 to 16, and each of the M channels comprising N ways, where N is a natural number of 2 to 128, and each of the plurality of memory packages including at least one semiconductor die and configured to transmit and receive data to and from the controller-through one of the M channels, wherein, when the write operation transfer condition is determined to be satisfied, a first memory package belonging to a first channel among the plurality of memory packages performs a first write operation, and a second memory package belonging to the first channel among the plurality of memory packages performs a second write operation consecutively in response to first and second write commands from the controller respectively, and when the write operation transfer condition is determined to be not satisfied the first memory package performs the first and second write operations in response to the first and second write commands from the controller respectively.

2 . The data storage device of claim 1 , wherein both the first write operation and the second write operation are sequentially performed on the semiconductor dies belonging to the same channel.

3 . The data storage device of claim 1 , wherein the first channel comprises at least two memory packages, and wherein transferring of the second write operation to the second memory package is performed immediately after the first write operation.

4 . The data storage device of claim 3 , wherein the first channel comprises at least three memory packages, and comprises at least two ways, and the first and the second memory packages belong to different ways respectively.

5 . The data storage device of claim 1 , wherein transferring of the write operation are sequentially performed on other semiconductor dies in the first memory package until a package switching condition is satisfied, and when the package switching condition is satisfied, the transfer of the write operation from the first memory package to the second memory package is performed such that the write operation is transferred to the second memory package and the write operation is performed on a semiconductor die of the second memory package,
wherein the package switching condition is satisfied when a number of semiconductor dies to which the write operation is successively transferred in the first package is greater than or equal to a package switching reference value which is a selected natural number of 1 to 8, and wherein a number of memory packages corresponding to the first channel is P (where P is a third integer of 2 to 64), and wherein the package switching reference value is (N/P) when (N/P) is an integer, and is another integer closest to (N/P) when (N/P) is not the integer.

6 . The data storage device of claim 1 , wherein transfers of the write operation are sequentially performed on other semiconductor dies in the first memory package until a package switching condition is satisfied, and when the package switching condition is satisfied, the transfer of the write operation from the first memory package to the second memory package is performed such that the write operation is transferred to the second memory package and the write operation is performed on a semiconductor die of the second memory package, and
wherein transfer of the write operation between packages are sequentially performed on the plurality of memory packages in the first channel.

7 . The data storage device of claim 6 , wherein a second semiconductor die next to a first semiconductor die last used for a most recent previous write operation in the first memory package is preferentially used for a next write operation when the transfer of the write operation between packages is continued and the next write operation is again transferred to the first memory package.

8 . The data storage device of claim 7 , wherein, after the second semiconductor die next to the first semiconductor die last used for the write operation has been preferentially used for the write operation, semiconductor dies not used for an immediately previous write operation of the first memory package are preferentially used for the write operation.

9 . The data storage device of claim 1 , wherein a number of semiconductor dies included in the plurality of memory packages is greater than M×N and less than 4096.

10 . The data storage device of claim 9 , wherein a number of physical chip enable (CE) pins in one channel is less than N.

11 . A data storage device, comprising:
a controller mounted on a substrate, the controller including a central processing unit (CPU), an internal memory, a buffer memory control unit, and a flash interface; and a buffer memory; and a plurality of memory packages including M channels, where M is a natural number of 1 to 16, and each of the M channels includes N ways, where N is a natural number of 2 to 128 and each of the plurality of memory packages includes at least one semiconductor die and is configured to transmit and receive data to and from the controller through one of the M channels, wherein each of the M channels includes P memory packages (where P is a natural number of 2 to 64), and the controller is configured such that a numbers of ways respectively corresponding to the P memory packages are equal to each other when a write operation of data is performed through one channel, and wherein, when a write operation transfer condition is satisfied, a next write operation is transferred to another semiconductor die in a same channel, and when a package switching condition is satisfied, the next write operation is transferred to another memory package in the same channel.

12 . The data storage device of claim 11 , wherein the memory package for which the write operation is performed is selected using a chip enable pin.

13 . The data storage device of claim 11 , wherein a number of semiconductor dies included in the plurality of memory packages is greater than M×N.

14 . The data storage device of claim 11 , wherein a number of physical chip enable (CE) pins in one channel is less than N.

15 . A solid state drive (SSD) comprising:
a plurality of memory packages, each of the memory packages having at least one semiconductor die; a buffer memory; and a controller including a central processing unit (CPU), an internal memory, a buffer memory control unit, and a flash interface; wherein the plurality of memory packages being configured to be controlled by the controller and to transmit and receive data to and from the controller via M channels (where M is a natural number of 1 to 16), each of which comprises N ways (where N is a natural number of 2 to 128 and is equal for each of the M channels), wherein semiconductor dies belonging to one channel are each configured such that a write operation is transferred from one semiconductor die using one way of the N ways to another semiconductor die using another way of the N ways in the one channel when a write operation transfer condition is satisfied, wherein transfers of the write operation are sequentially performed on the semiconductor dies belonging to the one channel, wherein the N ways are sequentially used until each of them is used once, and wherein a number of memory packages is equal for each of the M channels.

16 . The SSD of claim 15 , wherein semiconductor dies belong

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Duk-Soo
• Jeong Jong-Wook
• Lim Hyoung-Taek
• Gu Min-Woo

Classifications

• G06F3/0616

  in relation to life time, e.g. increasing Mean Time Between Failures [MTBF] · CPC title

• G06F3/0688

  Non-volatile semiconductor memory arrays · CPC title

• G06F3/0635

  by changing the path, e.g. traffic rerouting, path reconfiguration · CPC title

• G11C11/5671

  using charge trapping in an insulator · CPC title

• G06F3/0659 Primary

  Command handling arrangements, e.g. command buffers, queues, command scheduling · CPC title